• 제목/요약/키워드: Plasma Technology

검색결과 3,817건 처리시간 0.041초

MgO-Al2O3-SiO2계 유리의 열물성과 내플라즈마성 연구 (Study on Thermal Properties and Plasma Resistance of MgO-Al2O3-SiO2 Glass)

  • 윤지섭;최재호;정윤성;민경원;임원빈;김형준
    • 반도체디스플레이기술학회지
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    • 제20권2호
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    • pp.61-66
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    • 2021
  • In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al2O3-SiO2(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF4/O2/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al2O3 and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO2.

Effect of Cold Plasma on Total Polyphenol Content and Anti-Inflammatory Activities of Peanut (Arachis hypogaea L.) Hull

  • Mihyang Kim;Yeo Ul Cho;Narae Han;Jin Young Lee;Yu-Young Lee;Moon Seok Kang;Hyun-Joo Kim
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2022년도 추계학술대회
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    • pp.330-330
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    • 2022
  • In recent studies, cold plasma has been used to induce exudation of polyphenols and flavonoids from food materials, leading to enhancement of functional properties. And it is known that polyphenols interact with inflammation related metabolism. The objectives of this study were to investigate the effects of cold plasma treatments on the increase of total phenolic content (TPC), total flavonoid content (TFC), and anti-inflammatory activities of 'Sinpalkwang' peanut (Arachis hypogaea L.) hull. Plasma treatments were carried out using a dielectric barrier discharge gas exchange system at different radicals and temperatures (O3-25℃, O3-150℃, NOx-150℃). Significant differences in TPC, TFC, and inflammatory mediator such as nitric oxide (NO) and tumor necrosis factor a (TNF-α) in lipopolysaccharide stimulated Raw 264.7 macrophages were observed between treated and non-treated peanut hull samples (p < 0.001). Cold plasma treated samples showed higher content (TPC: 2.87-2.93 mg/g sample, TFC: 0.96-0.98 mg/g sample) than non-treated sample (TPC: 2.47 mg/g sample, TFC: 0.78 mg/g sample). Cold plasma treated samples showed lower content of NO (3.3-5.0 uM) and TNF-α (141.4-162.2 ng/mL) than non-treated sample (NO: 11.1 uM, TNF-α: 210.2 ng/mL). This study suggests that cold plasma has potential to improve functionalities of food materials and that cold plasma treated peanut hull can be used as immune enhancing materials.

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RF 플라즈마 처리법에 기반한 기계적 밀링된 Zr 분말의 구형화에 따른 특성 변화 (Property of the Spheroidized Zr Powder by Radio Frequency Plasma Treatment)

  • 이유경;최미선;박언병;오정석;남태현;김정기
    • 한국분말재료학회지
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    • 제28권2호
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    • pp.97-102
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    • 2021
  • Powder quality, including high flowability and spherical shape, determines the properties of additively manufactured products. Therefore, the cheap production of high-quality powders is critical in additive manufacturing. Radio frequency plasma treatment is an effective method to fabricate spherical powders by melting the surface of irregularly shaped powders; in the present work, mechanically milled Zr powders are spheroidized by radio frequency plasma treatment and their properties are compared with those of commercial Zircaloy-2 alloy powder. Spherical Zr particles are successfully fabricated by plasma treatment, although their flowability and impurity contents are poorer than those of the commercial Zircaloy-2 alloy powder. This result shows that radio-frequency plasma treatment with mechanically milled powders requires further research and development for manufacturing low-cost powders for additive manufacturing.

전송선로를 이용한 플라즈마 전력 전달 연구 (Research on Transmission Line Design for Efficient RF Power Delivery to Plasma)

  • 박인용;이장재;김시준;이바다;김광기;염희중;유신재
    • 반도체디스플레이기술학회지
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    • 제15권2호
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    • pp.6-10
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    • 2016
  • In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

Determining plasma boundary in Alvand-U tokamak

  • Yahya Sadeghi
    • Nuclear Engineering and Technology
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    • 제55권9호
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    • pp.3485-3492
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    • 2023
  • One of the major topic of tokamak research is the determination of the magnetic profile due to magnetic coil fields and plasma current by mean of data from magnetic probes. The most practical approach is to use the current filament method, which models the plasma column with multiple current carrying filaments and the total current of these filaments is equal to the plasma current. Determining the plasma boundary in Alvand-U tokamak is the main purpose of this paper. In order to determine the magnetic field profile and plasma boundary, information concerning the magnetic coils, their position, and current is required in the computing code. Then, the plasma shape is determined and finally the plasma boundary is extracted by the code. In the conducted research, we discuss how to determine the plasma boundary and the performance of the computing code for extraction of the plasma boundary. The developed algorithm shows to be effective by running it in the regular pc machine with characteristics of Intel (R) core (TM) i3-10100 CPU @3.60 GHz and 8.00 GB of RAM. Finally, we present results of a test run for computing code using a typical experimental pulse.

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • E2M - 전기 전자와 첨단 소재
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    • 제15권9호
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    • pp.10-14
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

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Effects as Plasma Treatments on CdS Buffer Layers in CIGS Thin Film Solar Cells

  • Jo, Hyun-Jun;Sung, Shi-Joon;Hwang, Dae-Kue;Bae, In-Ho;Kim, Dae-Hwan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.171-171
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    • 2012
  • We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

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High quality fast growth nano-crystalline Si film synthesized by UHF assisted HF-PECVD

  • Kim, Youn-J.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.306-306
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    • 2010
  • A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

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Dry Etch 공정에 의한 Wafer Edge Plasma Damage 개선 연구 (Plasma Charge Damage on Wafer Edge Transistor in Dry Etch Process)

  • 한원만;김재필;유태광;김충환;배경성;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.109-110
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    • 2007
  • Plasma etching process에서 magnetic field 영향에 관한 연구이다. High level dry etch process를 위해서는 high density plasma(HDP)가 요구된다. HDP를 위해서 MERIE(Magnetical enhancement reactive ion etcher) type의 설비가 사용되며 process chamber side에 4개의 magnetic coil을 사용한다. 이런 magnetic factor가 특히 wafer edge부문에 plasma charging에 의한 damage를 유발시키고 이로 인해 device Vth(Threshold voltage)가 shift 되면서 제품의 program 동작 문제의 원인이 되는 것을 발견하였다. 이번 연구에서 magnetic field와 관련된 plasma charge damage를 확인하고 damage free한 공정조건을 확보하게 되었다.

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The Effect of La-silicon Oxynitride on the Densification of ${Si_3}{N_4}$ Ceramics by Spark Plasma Sintering

  • Cho, Kyeong-Sik;Kim, Sungjin;Beak, Sung-Ho;Park, Heon-Jin;Lee, June-Gunn
    • 한국세라믹학회지
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    • 제38권8호
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    • pp.687-692
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    • 2001
  • Silicon nitride-La-silicon oxynitride ceramics were fabricated by Spark Plasma Sintering (SPS). The density, crystalline phase and microstructure were compared with those obtained by Hot Pressing (HP). The full density was achieved within 40 min by spark plasma sintering at 1$650^{\circ}C$, whereas the same result was required by hot pressing with a dwell time of 500 min at higher temperature. There were some differences in the microstructure and second phases in the sintered ceramics, which are attributed to the rapid densification in the spark plasma sintering. The fine and acicular grain microstructure appeared in spark plasma sintering.

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