• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.33-36
• /
• 2007

We performed a discharge analysis on ac plasma display panel through the numerical simulation of the EF (Energy Fluid) model using the electron's energy equation. When it is compared to the results of commonly used LFA (Local Field Approximation) model, there is a clear difference in the spatiotemporal distribution of Xe excited species. In particular, the experimentally observed striation phenomena in the anode region could be observed in EF model and the occurrence of the striation was attributed to the ionization and excitation instability due to the streaming electrons in the anode region plasma.

• Transactions on Electrical and Electronic Materials
• /
• 제2권3호
• /
• pp.7-11
• /
• 2001

Utility boiler operators seeking to gain the greatest economic advantage from their units are faced with three challenges, namely the obligatory light-up fuel costs, the additional expense of supplementary fuel firing should they wish to use a cheaper fuel that may be beyond the original burner manufacturer’s stability and combustion performance assurances and the immediate environmental impact of both. The novel use of plasma arc technology can provide a solution to these challenges. This paper introduces the work being undertaken through a joint collaboration between the EU, Kazahkstan and Russia in order to develop a tried and tested engineering methodology and a mathematical based application and sensitivity analysis approach for the design and optimisation stage of these plasma devices that, as a consequence, their assist in their universal introduction.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제53권2호
• /
• pp.79-82
• /
• 2004

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

• 한국표면공학회지
• /
• 제43권3호
• /
• pp.154-158
• /
• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2004년도 제26회 학술발표회 초록집
• /
• pp.142-142
• /
• 2004

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2011년도 추계학술대회
• /
• pp.291-292
• /
• 2011

This paper proposes an extraction method for reactor parameters in atmosphere plasma power supplies. This method is performed by detecting phase difference between inverter voltage and current, and extracting the reactance through reactive power. The validity of the proposed scheme is investigated through simulation results and experimental results.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.80-81
• /
• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.91-94
• /
• 2003

We studied the effect of barrier rib height variation using ray-optics code incorporated with three-dimensional plasma simulation to analyze the effects of cell geometry for varying pressure conditions. The optimal barrier rib height decreased as the Xe partial pressure increased which resulted in due to the formation of local, strong sheath under high Xe partial pressure condition.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.447-450
• /
• 1989

Single particle orbit in plasma is obtained by drift Hamiltonian formulation in magnetic coordinate. The collisional effect is implied by Monte Carlo Method and the velocity space diffusion, energy transfer to the back ground plasma and the variation of energy distribution of test particles are investigated from many particles analysis.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2001년도 ICCAS
• /
• pp.31.2-31
• /
• 2001

A real-time control strategy is presented for plasma control Rather than in-situ plasma variables, this is based on realtime measurements of two electrical positions that correspond to two match motors. Using the rf match monitor system, the positions were collected. The process of impedance matching was identified with variations in process factors, including rf power, pressure, and O$_2$ flow rate. A state-space model was obtained basing on autoregressive moving average model. For this model, a linear quadratic regulator was designed and applied. Simulation results revealed that match positions could accurately be regulated to follow certain positions arbitrarily chosen.