• Title/Summary/Keyword: Plasma Properties

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Decomposition Characteristics of Perfluorocompounds(PFCs) Gas through Gliding Arc Plasma with Hydrogen Gas (수소 가스를 첨가한 글라이딩 아크 플라즈마의 과불화화합물(PFCs) 가스 분해 특성)

  • Song, Chang-Ho;Park, Dong-Wha;Shin, Paik-Kyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.4
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    • pp.65-70
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    • 2011
  • Perfluorocompounds (PFCs) gases were decomposed by gliding arc plasma generated by AC pulse power. $N_2$ gas of 10 LPM flow rate and $H_2$ gas of 0.5 LPM were introduced into the gliding arc plasma generated between a pair of electrodes with SUS 303 material, and the PFCs gases were injected in the plasma and thereby were decomposed. The PFCs gas-decomposition-characteristics through the gliding arc plasma were analyzed by FT-IR, where pure $N_2$ and $H_2$-added $N_2$ environment were used to generate the gliding arc plasma. The PFCs gas-decomposition-properties were changed by electric power for gliding arc plasma generation and the H2 gas addition was effective to enhance the PFCs decomposition rate.

Effect of Plasma Polymerization Coating of CNTs on the Tensile Strength of Pei/Cnt Composites

  • Song, K.C.;Yoon, T.H.
    • Journal of Adhesion and Interface
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    • v.6 no.4
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    • pp.7-11
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    • 2005
  • Multi-walled carbon nanotubes (CNTs), which were purified by etching in 25% $H_2SO_4/HNO_3$ solution at $60^{\circ}C$ for 2 h, were modified via plasma polymerization coating of acrylic acid, allylamine or acetylene, and then utilized to prepare PEI/CNT composites. First, plasma polymerization conditions were optimized by measuring the solvent resistance of coatings in THF, chloroform and NMP, and the tensile strength of PEI/CNT (0.5%) composites as a function of plasma power (20~50 W) and monomer pressure (20~50 mTorr). The tensile strength of PEI/CNT composites was further evaluated as a function of CNT loading (0.2, 0.5 and 1%). Finally, FT-IR was utilized to provide a better understanding of the improved tensile properties of PEI/CNT composites via plasma polymerization coating of CNTs. Plasma polymerization of acrylic acid greatly enhanced the tensile strength of PEI/CNT composites, as did allylamine but to a lesser degree, while acetylene plasma polymerization coating decreased tensile strength.

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Surface Cleaning of Polyethylene Terephthalate Film with Non-equilibrium Atmospheric Discharge Plasma

  • Sung, Youl-Moon
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.2
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    • pp.79-83
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    • 2008
  • The dampness by treating the surface with polyethylene terephthalate (PET) film was measured to grasp the plasma parameters and was observed the surface condition with an atomic force microscope (AFM) to find the causes of the dampness. Also, the vibrational and rotational temperatures in the plasma were calculated after identifying the radicals within the plasma by analyzing the emission spectral with an emission spectrum. The hydrophilic properties were enhanced, by treating the surface of the PET film with non-equilibrium atmospheric discharge plasma. When the rotational temperature was 0.22 to 0.31 eV within the plasma, surface modification control could be easily carried out to surface treatment of PET film on non-equilibrium atmospheric pressure plasma.

Effects of Phase Difference between Voltage loaves Applied to Primary and Secondary Electrodes in Dual Radio Frequency Plasma Chamber

  • Kim, Heon-Chang
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.2 s.11
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    • pp.11-14
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    • 2005
  • In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

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Extreme Ultraviolet Plasma and its Emission Characteristics Generated from the Plasma Focus in Accordance with Gas Pressure for Biological Applications

  • Kim, Jin Han;Lee, Jin Young;Kim, Sung Hee;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.178.2-178.2
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    • 2013
  • Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

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Structural and Corrosive Properties of ZrO2 Thin Films using N2O as a Reactive Gas by RF Reactive Magnetron Sputtering (N2O 반응 가스를 주입한 RF Reactive Magnetron Sputtering에 의한 ZrO2 박막의 구조 및 부식특성 연구)

  • Jee, Seung-Hyun;Lee, Seok-Hee;Baek, Jong-Hyuk;Kim, Jun-Hwan;Yoon, Young-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.1
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    • pp.69-73
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    • 2011
  • A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

Study on Electron Temperature Diagnostic and the ITO Thin Film Characteristics of the Plasma Emission Intensity by the Oxygen Gas Flow (산소 유량별 플라즈마 방출광원 세기에 따른 전자온도 진단과 산화주석박막 특성연구)

  • Park, Hye Jin;Choi, Jin-Woo;Jo, Tae Hoon;Yun, Myoung Soo;Kwon, Gi-Chung
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.92-97
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    • 2016
  • The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

Effect of welding condition on microstructures of weld metal and mechanical properties in Plasma-MIG hybrid welding for Al 5083 alloy (알루미늄 5083 합금의 플라즈마 미그 하이브리드 용접시 용접부 미세조직과 기계적 성질 변화에 미치는 용접조건의 영향)

  • Park, Sang-Hyeon;Lee, Hee-Keun;Kim, Jin-Young;Chung, Ha-Taek;Park, Young-Whan;Kang, Chung-Yun
    • Journal of Welding and Joining
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    • v.33 no.1
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    • pp.61-71
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    • 2015
  • The effect of welding condition on microstructure and mechanical property of Plasma-MIG Hybrid Weld between Al 5083 plates(thickness : 10mm) was investigated. 1 pass weld without any defects such as puckering, undercut, and lack of fusion was obtained by 150~200A of plasma current and 5~7mm of welding speed. Gas porosities and shrinkage porosities were existed in the weld near fusion line. As welding speed and plasma current were decreasing, the area fraction of porosity was increasing. The hardness of the weld is increasing as welding speed. On the basis of microstructural analysis, Mg segregated region near dendrite boundaries tends to increase with the welding speed. In the result of hardness test, Distribution of hardness in fusion zone showed little change with the plasma current. However, when the welding speed increased, hardness in weld metal markdly increased. It could be considered that effect of heat input to growth of the dendritic solidification structures. Based on tensile test, tensile properties of weld metal was predominated by area fraction of porosities. Consequently, tensile properties can be controlled by formation site and area fraction of porosity.

Characteristics of Plasma Polymer Thin Films for Low-dielectric Application

  • Cho, S.J.;Boo, J.H.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.124-124
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    • 2011
  • This study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane (TEOS) hybrid plasma polymer thin films, as well as changing electrical and mechanical properties. The hybrid thin films were deposited on silicon(100) substrates by plasma enhanced chemical vapor deposition (PECVD) system. Toluene and tetraethoxysilane were utilized as organic and inorganic precursors. In order to compare the electrical and the mechanical properties, we grew the hybrid thin films under various conditions such as rf power of plasma, bubbling ratio of TEOS to toluene, and post annealing temperature. The hybrid plasma polymer thin films were characterized by Fourier transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), nanoindenter, I-V curves, and capacitance. Also, the hybrid thin films were analyzed by using ellipsometry. The refractive indices varied with the RF power, the bubbling ratio of TEOS to toluene, and the annealing temperature. To analyze their trends of electrical and mechanical properties, the thin films were grown under conditions of various rf powers. The IR spectra showed them to have completely different chemical functionalities from the liquid toluene and TEOS precursors. Also, The SiO peak intensity increased with increasing TEOS bubbling ratio, and the -OH and the CO peak intensities decreased with increasing annealing temperature. The AFM images showed changing of surface roughness that depended on different deposition rf powers. An nanoindenter was used to measure the hardness and Young' modulus and showed that both these values increased as the deposition RF power increased; these values also changed with the bubbling ratio of TEOS to toluene and with the annealing temperature. From the field emission scanning electron microscopy (FE-SEM) results, the thickness of the thin films was determined before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images.

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The comparative study of pure and pulsed DC plasma sputtering for synthesis of nanocrystalline Carbon thin films

  • Piao, Jin Xiang;Kumar, Manish;Javid, Amjed;Wen, Long;Jin, Su Bong;Han, Jeon Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.320-320
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    • 2016
  • Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

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