• 열처리공학회지
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• 제23권5호
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• pp.269-276
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• 2010

This study has been carried out to the low temperature plasma nitriding treatment on the mechanical properties of stainless steel at temperature range between $400^{\circ}C$ and $500^{\circ}C$. It was found that there was precipitated to free CrN matrix below $400^{\circ}C$ and there was precipitated S-phase of STS 316L, ${\varepsilon}$-phase of STS 409L and ${\alpha}N$-phase of STS 420J2. STS 316L has formed relatively abundant CrN phase and ${\gamma}^{\prime}-Fe_4N$ phase at $500^{\circ}C$, alternatively STS 409L and STS 420J2 were more deeply nitrided than STS 316L at $500^{\circ}C$.

• 한국세라믹학회지
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• 제35권6호
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• pp.610-618
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• 1998

Alumina were added to ceria based ceramic powders upto 9.7 vol% and composite powders were sprayed by plasma spraying process in order to improve the mechanical properties such as hardness fracture tough-ness and thermal shock resistance. The ceria based coating sprayed without alumina has the typical colum-nar and lamellar structure. Alumina addition has lowered the amount of columnar and lamellar sturcture Added alumina was segreagated in the grain boundary and grain of ceria based crystal accompanied with pore. The maximum value of density and the minimum value of porosity were observed at the sprayed coating with 4.8 vol% alumina. The hardness fracture toughness and thermal shock resistance were increased with alumina addition. The improvement of mechanical properties of plasma sparyed ceria based coatings result-ed from the disapperance of the columnar and lamellar sturcture by addition of alumina.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Carbon letters
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• 제6권2호
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• pp.106-110
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• 2005

In this work, the effects of atmospheric oxygen plasma treatment of carbon fibers on mechanical interfacial properties of carbon fibers-reinforced epoxy matrix composites was studied. The surface properties of the carbon fibers were determined by acid/base values, Fourier-transform infrared spectrometer (FT-IR), and X-ray photoelectron spectroscopy (XPS) analyses. Also, the crack resistance properties of the composites were investigated in critical stress intensity factor ($K_{IC}$), and critical strain energy release rate mode II ($G_{IIC}$) measurements. As experimental results, FT-IR of the carbon fibers showed that the carboxyl/ester groups (C=O) at 1632 $cm^{-1}$ and hydroxyl group (O-H) at 3450 $cm^{-1}$ were observed for the plasma treated carbon fibers, and the treated carbon fibers had the higher O-H peak intensity than that of the untreated ones. The XPS results also indicated that the $O_{1S}/C_{1S}$ ratio of the carbon fiber surfaces treated by the oxygen plasma led to development of oxygen-containing functional groups. The mechanical interfacial properties of the composites, including $K_{IC}$ (critical stress intensity factor) and $G_{IIC}$ (critical strain energy release rate mode II), were also improved for the oxygen plasma-treated carbon fibersreinforced composites. These results could be explained that the oxygen plasma treatment played an important role to increase interfacial adhesions between carbon fibers and epoxy matrix resins in our composite system.

• 한국분말재료학회지
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• 제27권4호
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• pp.333-338
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• 2020

In this study, we fabricate a thin- and dense-BCuP-5 coating layer, one of the switching device multilayers, through a plasma spray process. In addition, the microstructure and macroscopic properties of the coating layer, such as hardness and bond strength, are investigated. Both the initial powder feedstock and plasma-sprayed BCuP-5 coating layer show the main Cu phase, Cu-Ag-Cu₃P ternary phases, and Ag phase. This means that microstructural degradation does not occur during plasma spraying. The Vickers hardness of the coating layer was measured as 117.0 HV, indicating that the fine distribution of the three phases enables the excellent mechanical properties of the plasma-sprayed BCuP-5 coating layer. The pull-off strength of the plasma-sprayed BCuP-5 coating layer is measured as 16.5 kg/㎠. Based on the above findings, the applicability of plasma spray for the fabrication process of low-cost multi-layered electronic contact materials is discussed and suggested.

• Journal of Ceramic Processing Research
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• 제20권6호
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• pp.589-596
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• 2019

Pigments with minute particle sizes, such as carbon black (CB) and pigment red 48:2 (P.R.48:2), are the most important types of pigment and have been widely used in many industrial applications. However, minute particles have large surface areas, high oil absorption and low surface energy. They therefore tend to be repellent to the vehicle and lose stability, resulting in significant increases in viscosity or reaggregation in the vehicle. Therefore, finding the best way to improve the dispersion properties of minute particle size pigments presents a major technical challenge. In this study, minute particle types of CB and P.R.48:2 were treated with nitrogen gas plasma generated via radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) to increase the dispersion properties of minute particles in deionized (DI) water. The morphologies and particle sizes of untreated and plasma treated particles were evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The average distributions of particle size were measured using a laser particle sizer. Fourier transform infrared spectroscopy was carried out on the samples to identify changes in molecular interactions during plasma processing. The results of our analysis indicate that N2 plasma treatment is an effective method for improving the dispersibility of minute particles of pigment in DI water.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.140-140
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.187-187
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.