• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.77-77
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• 2012

As interest has increased in the interaction between low-temperature plasmas and materials, the role of modeling and simulation of processing in plasma has become important in understanding the effects of charged particles and radicals in plasma applications. Thus in this presentation, we present the theoretical and experimental studies of electron impact cross section for plasma processing gas, such as plasma etching and deposition processes. Also, here the work conducted at the Data Center for Plasma Properties (DCPP) over last 7 years on the systematic synthesis and assessment of fundamental knowledge on low-energy electron interactions with plasma processing gases is briefly summarized and discussed.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.397-400
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• 2010

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic $ZrO_2$ ($\bar{1}31$). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing $O_2$ gas ratio.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1544-1545
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• 2011

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source $C_4F_6$ gas may be used by itself and mixed with other gases are also used. However, the molecular gas $C_4F_6$ study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient ${\alpha}$/N, and the attachment coefficient ${\eta}$/N in $C_4F_6$ gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.152-155
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• 1994

The purpose of this paper is to develope an electron beam resist by the plasma polymerization. Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reactor. And then delineated pattern in the resist was developed with gas flow type reactor using Ar and O$_2$ gas as etching gas. We study about the effects of discharge power and mixing rate of the copolymerized thin film. The characteristics of molecular structure of thin film was investigated by FT-lR, DSC and GPC, and then was discussed in relation to its quality as a resist.

• 한국레이저가공학회지
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• 제5권3호
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• pp.15-20
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• 2002

The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process blown as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma(LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well-focused melted spots.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1721-1723
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• 1997

In AC Plasma Display Panel(PDP), serious problems are low radiation brightness and very high discharge voltage. To solve these problems, it is necessary to obtain optimal frequency of drive waveform and optimal gas mixing ratio. This paper presents firing voltage and sustain voltage as frequency of waveform and gas mixing ratio, and proposes optimal frequency of drive waveform and optimal gas mixing ratio.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• 한국표면공학회지
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• 제31권5호
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• pp.266-277
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• 1998

The effects of $H_2S$ gas ratio, temperature and time on the case depth, hardness, and sulfide and nitride formation on the surface of sulfnitrided SCM440 steel have been studied by micro-pulse plasma technique. The thickness of compound layer of sulfide and nitride increased with the increase of time, temperautre and $H_2S$ gas ratio. But surface hardness decreased with the increase of soft sulfide layer because the hard nitride layer formed beneath the sulfide. The thickness of sulfide layer was about 10$\mu\textrm{m}$ abpve 0.0088% of $H_2S$ gas. The highest surface hardness of the compound layer was Hv835 at $530^{\circ}C$, 1hr and 0.06% of $H_2S$ gas. X-ray diffraction indicated that the surface products were $Fe_{1_x}S$, $Fe_{2.5}N$ and $Fe_4N$. It was confirmed by EPMA that sulfide only existed in the surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.158-158
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• 2015

Myoblast are myogenic precursors that proliferate, activate, and differentiate on muscle injury to sustain the regenerative capacity of skeletal muscle; The neuronal isoform of nitric oxide synthase (nNOS, termed also NOS-I) is expressed in normal adult skeletal muscle, suggesting important functions for Nitric oxide (NO) in muscle biology1,2,3. However, the expression and subcellular localization of NO in muscle development and myoblast differentiation are largely unknown. In this study, we examined effects of the nitric oxide generated by a microwave plasma torch, on proliferation/differentiation of rat myoblastic L6 cells. Experimental data pertaining to nitric oxide production are presented in terms of the oxygen input in units of cubic centimetres per minute. The various levels of nitric oxide are observed depending on the flow rate of nitrogen gas, the ratio of oxygen gas, and the microwave power4. In order to evaluate the potential of nitric oxide as an activator of cell differentiation, we applied nitric oxide generated from the microwave plasma torch to L6 skeletal muscles. Differentiation of L6 cells into myotubes was significantly enhanced the differentiation after nitric oxide treatment. Nitric oxide treatment also increase the expression of myogenesis marker proteins and mRNA level, such as myogenin and myosin heavy chain (MHC), as well as cyclic guanosine monophosphate (cGMP), However during the myotube differentiation we found that NO activate oxidative stress signaling erks expression. Therefore, these results establish a role of NO and cGMP in regulating myoblast differentiation and elucidate their mechanism of action, providing a direct link with oxidative stress signalling, which is a key player in myogenesis. Based on these findings, nitric oxide generated by plasma can be used as a possible activator of cell differentiation and tissue regeneration.

• 공업화학
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• 제17권1호
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• pp.1-11
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• 2006

본 논문에서는 대기압 저온 플라즈마를 이용하여 저농도의 유해물질로서 배출되는 NOx, SOx, 휘발성 유기화학물(VOCs), 악취, 매연입자를 처리하는 대기환경설비기술에 대해 살펴보았다. 대기압 저온 플라즈마는 대부분 코로나 및 유전체방전을 통해 발생되며, 저온 플라즈마는 배출가스의 99% 이상을 차지하는 산소, 질소, 이산화탄소 및 수증기의 엔탈피를 증가시키지 않고서도 즉, 낮은 공정온도 조건에서 유해가스를 선택적으로 처리하는 장점이 있다. 본 논문에서는 저온 플라즈마 발생 및 이로 인해 유도된 화학반응의 특성을 수치해석 및 실험결과를 통해 살펴봄으로서 유해물질을 처리하는데 적합한 플라즈마의 조건(전자 에너지 밀도)을 제시하였고, 이를 구체적으로 달성하기 위한 반응기 형상 및 전력조건을 제시하였다. 본 논문의 후반부에서는 해당기술의 개발사례 및 현재 이들 기술이 갖는 기술 및 경제적인 한계점을 제시함으로서 향후 관련기술의 완성도를 높이는데 도움이 되고자 하였다.