• Transactions of the Korean Society of Automotive Engineers
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• v.8 no.5
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• pp.12-19
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• 2000

The increasing use of vehicles is causing air-pollution problems. Diesel vehicles are preferred to gasoline vehicles, because the diesel vehicles are superior to gasoline vehicles in terms of fuel consumption, durability, power and efficiency. But the emission reduction technologies for diesel vehicle are not developed well like those for gasoline vehicles. Moreover, the NOx and smoke emitted from diesel vehicle are recognized as a main source of the air-pollution in the urban areas. The emission reduction devices have been installed for each of the emission gas components. Using plasma(i.e. electrical energy)only, the emission gas was found to be reduced. The present paper investigate the effects of a low temperature plasma device in engine performance as well as in emission reduction with the change of the applied voltage and the loading rate of the engine.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.1
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• pp.29-35
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• 1987

TPolystyrene thin films are prepared by glow discharge of sytrene monomer vapor th establish the growth mechanism of organic thin films by the plasma polymerization. As the discharge parameters, discharge current(5mA-20mA), frequency (10kHz-50kHz, 13.56MHz), gaspressure (0.2torr-1.5torr), and discharge time(2min-12min)are adopted. Plasma-polymerized filmsof styrene vapor are identified as polystyrene by IR spectra. The thickness of plasma-polymerized films increases with gas pressure, frequency and discharge current in the region of the low frequency and below the allowed gas pressure where the polymerization occurs. It is suggested that the growth mechanism can be explained by ionic reaction in d.c. and low frequency region, and by radical reaction in high frequency region.

• Journal of Welding and Joining
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• v.20 no.5
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• pp.120-126
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• 2002

Ni-5%Al alloy powder is widely used as the bond coating powder to improve the adhesive strength between the substrate and coating. The important properties in the bond coating are the deposition efficiency and surface roughness. In this study, it was tried to optimize the plasma spray parameters to maximize the deposition efficiency and surface roughness. In the first step, spray current and hydrogen gas flow rate were optimized in order to increase the deposition efficiency. In the next step, the seven plasma spray variables were selected and optimized to improve both the deposition efficiency and surface roughness using the Taguchi experimental method. By these optimization, the deposition efficiency was improved from about 10 % at the frist time to 51.2 % by the optimization of spray current and hydrogen gas flow rate and finally to 65.2 % by the Taguchi experimental method. The average surface roughness was increased from about $12.9\mu\textrm{m}$ to $15.4\mu\textrm{m}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.158-159
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multilayer interconnection layers. In order to reduce the RC delay, low-k materials will be used for inter-metal dielectric (IMD) materials. We have developed self-consistent simulation tool that includes neutral-species transport model, based on the relaxation continuum (RCT) model. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal steady state profile could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.91-91
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• 2005

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.249-255
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• 1999

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.916-922
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• 1986

In this paper, the measurement of RF discharge plasma parameters is studied both analytically and experimentally by the electric probe method. In the measurement using an electric probe, we measure the parameters of plasma in CF4 etching gas and discuss the relations of the results and Si wafer etching. Also, we show that the electric probe method is attractive for various applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.