• Journal of the Korean Institute of Gas
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• v.4 no.2 s.10
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• pp.1-6
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• 2000

In this experiment, we made the plasma reactor which adhere needle electrode in order to treat safely an NOx which was included in the gas. Also we experimently investigated characteristics of equipment and inspected efficiency. As a reaction gas, by using mixture gas of $NO/N_2$ and $N_2/O_2$, we setted up initial NO concentration and gas flow rate was set at 2 ${\iota}$/min. As a reaction characteristics of NOx, when discharge input power was high, NO concentration decreased and when the oxygen concentration increased, the NO decomposition was easy and decomposition energy efficiency was high. Also in case that NO concentration increased, NO decomposition energy efficiency was high but decomposition rate was low. The characteristics of ozone, when discharge input power was high, ozone increased and when $NO/N_2$ concentration increased, the ozone decreased.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.29-35
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• 1999

Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.92-95
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10~60m Torr, 10~300W respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.577-582
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• 2007

The plasma display panel is an image expression display using gas discharge plasma. However, gas discharge characteristics vary with temperature as gas discharge is sensitive to temperature. The discharge time lag extends a lot in low temperature and it is known as the cause which hinders high speed addressing which is essential for the size enlargement of the panel. Accordingly this research aims at identifying the temperature-dependent discharge characteristic. The lower temperature becomes, the longer addressing discharge time lag becomes. Particularly the statistical time lag extends much in low temperature. The increasing of electric field shortens discharge time lag in low temperature. Also, when priming particles are sufficiently supplied, stable discharge can be performed regardless of the influence of temperature.

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.1
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• pp.69-74
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• 2007

The axial speed of plasma current sheath was measured with Rogowski coils and compared with the theory of snowplow model. Current sheath speed is measured with $10^6cm/s$. The speed of light gas, $H_2$ and He were similar to the theory of model, but the heavy gas, Ar was not similar to the theory. The disagreement of the heavy gas was guessed as a results of the instability of the current sheath.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.48-49
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• 2001

Cryogenic technology is one of the key technologies for fusion reactor equipped with superconducting coil for plasma confinement. The KSTAR(Korea Superconducting Tokamak Advanced Research)Project is in progress since 1996. Major parameters of the KSTAR tokamak are : major radius 1.8m, minor radius 0.5m, toroidal field 3.5 Tesla and plasma current 2MA with a strongly shaped plasma cross-section and double -null diverter. Considering practical engineering constraints, the KSTAR device is designed for a pulse length of 300 sec in up-graded operation mode but in the initial configuration would provide a pulse length of 20 sec provided by the poloidal coil system in base-line operation mode. The cryogenic system is composed as follows : cold box, helium compressor system, distribution box, helium gas buffer tank, helium gas purifying system, gas recovery system, liquid helium storage dewar, current lead box, current bus line and liquid nitrogen storage tank.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.384-384
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• 2010

The surface reaction characteristics of Zinc Oxide (ZnO) in $Cl_2/BCl_3$/Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2$(3 sccm)/$BCl_3$(16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.252-255
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• 1996

Cl-based gas chemistry is generally used to etching for Al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with $H_2O$ due to air exposure and results in Al corrosion. In this study, the corrosion Phenomena of Al were examined with XPS(X-ray photoelectron spectroscopy) and SEF(Scanning electron microscopy). It was confirmed that chlorine mainly existed at the grain boundary of Al alloy after plasma etching of Al alloy with Cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al a1loy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.