• Journal of Pharmaceutical Investigation
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• v.22 no.3
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• pp.197-204
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• 1992

A gas chromatographic method using nitrogen phosphorous selective detection was developed for simultaneous determination of haloperidol and its metabolite, reduced haloperidol, in human plasma. Combelen was used as internal standard, The method involved extraction and trimethylsilylation followed by the injection of $2-4\;{\mu}l$ of benzene layer, which was used to dissolve the trimethylsilylated derivatives of haloperidol and reduced haloperidol, onto SE-54 column [5% phenyl methyl silica fused capillary column, $16m{\times}0.22\;mm$ $(I.D.){\times}0.33\;{\mu}m$ (coated thickness)]. The temperature of column oven was programmed from $200^{\circ}C\;to\;300^{\circ}C$ at the increase rate of $10^{\circ}C/min and also the temperatures of injector and detector were set at $300^{\circ}C$. Helium was used as carrier gas and its flow rate was maintained at 30 ml/min. The detection was conducted with nitrogen phosphorous selective detector. The retention times for combelen, reduced haloperidol and haloperidol were found to be 9.14, 9.75 and 9.99 min, respectively. The detection limits for haloperidol and reduced haloperidol in human plasma were both 0.2 ng/ml. The coefficients of variation of the intra-assay were generally low (below 9.8%). The mean absolute recoveries of added haloperidol and reduced haloperidol from plasma were 72% and 84%, respectively. No interferences from endogenous substances were found.

• Particle and aerosol research
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• v.16 no.1
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• pp.1-8
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• 2020

Nano-pulse plasma technology has great potential as the process simplicity, high efficiency and low energy consumption for SO₂ removal. The research on the gas-to-particle conversion is required to achieve higher efficiency of SO₂ gas removal. Thus, we studied the effect of the relative humidity, NH₃ concentration and applied voltage of the nano-pulse plasma system in the gas to particle conversion of SO₂. The particles from the conversions were increased from 10 to 100 nm in diameter as relative humidity, NH₃ concentration, applied voltage increases. With these results, nano-pulse plasma system can be used to more efficient removal of SO₂ gas by controlling above parameters.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.886-890
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• 2003

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.

• Journal of Environmental Science International
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• v.24 no.7
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• pp.947-954
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• 2015

Dielectric barrier discharge plasma is a new technique in water pollutant degradation, which that is characterized by the production of chemically active species such as hydroxyl radicals, ozone, hydrogen peroxide, etc. If dissolving of plasma gas generated in the plasma reaction has increased, it is possible to increase the contaminant removal capacity. In this study, the improvement on the dissolving performance of plasma gas was evaluated by the indirect method measuring the overall oxygen transfer coefficient. Experiments were conducted to examine the effects of nozzle type, distance from water surface, air supply rate and liquid circulation rate. The experimental results showed that the $K_{La}$ value of the 3-prong nozzle is 2.67 times higher than the diffuser. The order of $K_{La}$ value with nozzle type ranked in the following order: 3-prong nozzle (inner diameter, less 1 mm) > circular nozzle (inner diameter, 1.5 mm) > ellipse nozzle (short diameter 1 mm, long diameter 2.5 mm) > circular nozzle (inner diameter, 3 mm). Optimal liquid circulation rate was appeared to be 1.7 L/min, the value of $K_{La}$ was 0.510 1/min. The value of $K_{La}$ with increasing air supply rate was revealed in the form of an exponential such as $K_{La}=0.3581e^{0.2919^*air\;flow\;rate}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.91-95
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• 2006

In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mechanism is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by Langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe.

• Journal of Environmental Science International
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• v.22 no.7
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• pp.915-923
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• 2013

Decomposition of non-biodegradable contaminants such as phenol contained in water was investigated using a dielectric barrier discharge (DBD) plasma reactor in the aqueous solutions with continuous oxygen bubbling. Effects of various parameters on the removal of phenol in aqueous solution with high-voltage streamer discharge plasma are studied. In order to choose plasma gas, gas of three types (argon, air, oxygen) were investigated. After the selection of gas, effects of 1st voltage (80 ~ 220 V), oxygen flow rate (2 ~ 7 L/min), pH (3 ~ 11), and initial phenol concentration (12.5 ~ 100.0 mg/L) on phenol degradation and change of $UV_{254}$ absorbance were investigated. Absorbance of $UV_{254}$ can be used as an indirect indicator of phenol degradation and the generation and disappearance of the non-biodegradable organic compounds. Removal of phenol and COD were found to follow pseudo first-order kinetics. The removal rate constants for phenol and COD of phenol were $5.204{\times}10^{-1}min^{-1}$ and $3.26{\times}10^{-2}min^{-1}$, respectively.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2074-2076
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• 2000

In this paper, RFICP equipment is designed and manufactured with the aid of high frequency discharge to produce uniform plasma with high density and large diameter. And $SF_6$ gas is used to investigate plasma characteristics. The electron density and temperature, potential dependence of $SF_6$ plasma in accordance with its operating pressure, gas flux and input power are measured by the method of Langmuir probe. The etching characteristics of the plasma is researched in accordance with operating pressure, gas flux, input power to apply to Silicon Wafer which is used in the field of semiconductor process. The proposed RFICP equipment, in this paper, has relatively excellent etching characteristics, and is thought to be element of oxidization-sheath etching facility in semiconductor manufacturing process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.669-673
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• 2011

This study explores the numerical analysis method of fluid dynamics in the reaction section to improve the gas processing efficiency in the hazardous gas removal by atmospheric thermal plasma. This study also intends to contribute in technology advance to improve the processing efficiency and make the process more stable. Numerical analysis of temperature distribution in the reaction section dependent on the change in flow velocity of Ar and plasma temperature change, which are major control variables in the cracking process of HFC-23 using arc plasma, was done. The characteristic of incoming oxygen by temperature suggested that when temperature increased to 1600K, 1700K, 1800K respectively, the range of cracking temperature 1500K increased to 75.0%, 83.3%, 90.2% respectively. The temperature change of Ar by velocity change was widest in the area higher than 1500K when the velocity was 2.5m/s; however, since there was no big difference when the velocity was 2m/s, it is believed that 2 m/s would be most proper.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.