• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

• The Korean Journal of Food And Nutrition
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• v.20 no.3
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• pp.245-252
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• 2007

This study investigated the effects of conjugated linoleic acid(CLA) on the fat deposition, triglyceride levels and the expression of stearoyl-CoA desaturase 1(SCD1) in the livers of male ICR mice that were fed with either soybean oil or beef tallow supplemented with CLA. Mice weighing $25{\sim}30$ g were divided into four groups; soybean oil(SBO), and SBO supplemented with 1% CLA(SBOC), beef tallow(BT) and BT supplemented with 1% CLA(BTC). Each group consisted of 10 mice that were fed the experimental diets for 4 weeks. The experimental diets consisted of 64% carbohydrate, 20% protein, and 16% fat in terms of their contributions to total calories. All other nutrients were identical in the diets. Triglyceride measurements were completed using a kit. Fatty acid compositions were analyzed in the liver using gas chromatography. The levels of SCD1 expression were analyzed by RT-PCR in the liver. No significant differences were found for food intake level, body weight and food efficiency among the experimental groups. However, the weights of epididymal fat pads and plasma triglyceride levels were significantly lower in SBOC and BTC(p<0.05) compared to the SBO and BT groups. These effects were similar in the CLA supplemented groups. The expression level of SCD1 gene and ${\Delta}9$ desaturase index were not significantly different, regardless of the fat used for CLA supplementation. Based on these results, addition of CLA showed decreasing effects on the fat depots weight and the concentration of triglyceride regardless of the fat sources. The SCD1 gene expression and ${\Delta}9$ desaturase index were not influenced by the types of fats with respect to the CLA effects.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.312-316
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• 1999

The interfacial structure of duplex treated AISI 4140 consisting of iron nitride and TiN layer was characterized by optical microscope, SEM and XRD. A black layer was formed from the decomposition of iron nitride during Ti ion bombardment. The black layer was characterized as an a-Fe phase transformed from the iron nitride by XRD. In order to identify the formation mechanism of the black layer, a thermal analysis of iron nitride undertaken by DSC method. As an iron nitride was mostly consisted of ${\gamma}$'-Fe$_4$N and $\varepsilon$-$Fe_3$N phase after plasma nitriding, in this study, a ${\gamma}$'$-Fe_4$N and $\varepsilon$-$Fe_3$N powders were separately prepared by the different processing conditions of gas nitriding of iron powder in the fluidized bed. From the DSC thermal analysis, the phase transformation of ${\gamma}$'$-Fe_4$N, $\varepsilon$-$Fe_3$N was followed the path of transformation; $ \Upsilon{'}-Fe_4$Nlongrightarrow${\gamma}$-Felongrightarrowa-Fe and of $\varepsilon$-$Fe_3$Nlongrightarrow$\varepsilon$-$Fe_{2.5}$ /N+${\gamma}$'$-Fe_4$Nlongrightarrow${\gamma}$'-Fe$_4$Nlongrightarrow${\gamma}$longrightarrowFelongrightarrowalongrightarrowFe, respectively. It explains the reason why the $\varepsilon$ $-Fe_3$N phase disappeared in the first time and then ${\gamma}$'-Fe$_4$N in the formation of the black layer in the duplex coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Proceedings of the Ginseng society Conference
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• 2002.10a
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• pp.238-252
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• 2002

In order to screen out indicators for the discrimination of ginseng habitat, some physical and chemical characteristics of Korean red ginsengs (94 kinds) and Chinese red ginsengs (50 kinds) were analyzed by using a rheometer, an electronic nose system, a combined technique of solid phase micro-extraction (SPME) and gas chromatograph equipped with an electron capture detector (GC/ECD), an X-ray fluorescence spectrometer (XRF), an inductively coupled plasma mass spectrometer (ICP/MS), a near infrared spectrometer (NIRs) and high performance liquid chromatography equipped with evaporative light scattering detector (HPLC/ELSD). The results are summarized as follows: (i) The rhizome strengths of Korean red ginsengs were significantly higher than those of Chinese red ginsengs. (ii) The electronic nose patterns of Korean red ginsengs were significantly different from those of Chinese red ginsengs. (iii) Some unidentified peaks were detected not in the headspace of Korean red ginsengs but in the headspace of Chinese red ginsengs when the headspace volatiles prepared by the SPME technique were analyzed by GC/ECD. (iv) Either the content ratios of K to Ca or Mn to Fe were significantly different between Korean red ginsengs and Chinese red ginsengs. (v) The reflectance ratios of NIRs wavenumbers such as $904\;cm^{-1}\;to\;1088\;cm^{-1}$ for Korean red ginsengs were significantly different from those for Chinese red ginsengs. (vi) The content ratios of ginsenoside-Rg to ginsenoside-Re of Korean red ginsengs were significantly higher than those of Chinese red ginsengs. These results indicate that the rhizome strength, the electronic nose pattern, the occurrence of ECD-sensitive headspace volatile components, the content ratios of K to Ca and Mn to Fe, the NIRs pattern and the content ratio of ginsenoside-Rg to -Re may be indicators for the discrimination of ginseng habitat.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• Tribology and Lubricants
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• v.35 no.2
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• pp.132-138
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• 2019

In this study, we demonstrate the effects of the acidic properties of montmorillonite (MMT), which is commonly used as a catalyst, on the conversion and selectivity of the dimer acid methyl ester (DAME) synthesis. We synthesize DAME by the dimerization of conjugated linoleic acid methyl ester (CLAME) and oleic acid methyl ester using MMT KSF. Incidentally, trimer acid methyl ester was formed as a by-product during the DAME synthesis. There is a necessity to adequately adjust the strength and quantity of the acid site to control the selectivity of DAME. Therefore, we vary the pH of the MMT acid by using various metal hydroxides. The purpose of this study is to increase the yield of monocyclic dimer acid methyl ester, which is a substance with adequate physical properties for industrial applications (e.g., lubricant and adhesive, etc.), using a heterogeneous catalyst. We report the dimerization of fatty acid methyl ester by using base treated-KSF, and apply it to conjugated soybean oil methyl ester. Then, we transmute the acid site properties of KSF, such as pH of 5 wt.% slurry KSF and various alkali metals (Li, Na, K, Ca). Characterization of base treated-KSF using a pH meter, x-ray diffraction, inductively coupled plasma-atomic emission spectrometer, Brunauer-Emmett-Teller surface analysis, and temperature-programmed desorption. We conduct an analysis of CLAME and DAME using nuclear magnetic resonance spectroscopy, gas chromatography, and gel permeation chromatography. Through these experiments, we demonstrate the effects of the acidic properties of KSF on the conversion and selectivity of the DAME synthesis, and evaluate its industrial potential by application to waste vegetable oil.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.