• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.81-83
• /
• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Journal of the Korean Institute of Intelligent Systems
• /
• v.11 no.3
• /
• pp.215-222
• /
• 2001

Neural network based models of semiconductor manufacturing processes have been shown to offer advantages in both accuracy and generalization over traditional methods. However, model development is often complicated by the fact that back-propagation neural networks contain several adjustable parameters whose optimal values unknown during training. These include learning rate, momentum, training tolerance, and the number of hidden layer neurOnS. This paper presents an investigation of the use of genetic algorithms (GAs) to determine the optimal neural network parameters for the modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films. To find an optimal parameter set for the neural network PECVD models, a performance index was defined and used in the GA objective function. This index was designed to account for network prediction error as well as training error, with a higher emphasis on reducing prediction error. The results of the genetic search were compared with the results of a similar search using the simplex algorithm.

• Proceedings of the Membrane Society of Korea Conference
• /
• 1998.04a
• /
• pp.99-101
• /
• 1998

1. Introduction : The conventional grafting polymerization technique requires chemically reactive groups on the surface as well as on the polymer chains. For this reason, a series of prefunctionalization steps are necessary for covalent grafting. The surface prefunctionalizational technique for grafting can be used to ionization radiation, UV, plasma, ion beam or chemical initiators. Of these techniques, radiation method is one of the useful methods because of uniform and rapid creation of active radical sites without catalytic contamination in grafted samples. If the diffusion of monomer into polymer is large enough to come to the inside of polymer substrate, a homogeneous and uniform grafting reaction can be carried out throughout the whole polymer substrate. Radiation-induced grafting method may attach specific functional moieties to a polymeric substrate, such as preirradiation and simultaneous irradiation. The former is irradiated at backbone polymer in vacuum or nitrogen gas and air, and then subsequent monomer grafting by trapped or peroxy radicals, while the latter is irradiated at backbone polymer in the presence of the monomer. Therefore, radiation-induced polymerization can be used to modification of the chemical and physical properties of the polymeric materials and has attracted considerable interest because it imparts desirable properties such as blood compatibility. membrane quality, ion excahnge, dyeability, protein adsorption, and immobilization of bioactive materials. Synthesizing biocompatible materials by radiation method such as preirradiation or simultaneous irradiation has often used $\gamma$-rays to graft hydrophilic monomers onto hydrophobic polymer substrates. In this work, in attempt to produce surfaces that show low levels of anti-fouling of bovine serum albumin(BSA) solutions, hydroxyethyl methacrylate(HEMA) was grafted polypropylene membrane surfaces by preirradiation technique. The anti-fouling effect of the polypropylene membrane after grafting was examined by permeation BSA solution.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.6
• /
• pp.297-302
• /
• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• YAKHAK HOEJI
• /
• v.29 no.4
• /
• pp.199-205
• /
• 1985

It was previously reported that the deterioration rate of contractile force of the isolated heart from ginseng extract treated rat was slower than that from control. Present study was carried out to investigate the mechanism of the action of ginseng on the contractile force of the papillary muscle in terms of calcium metabolism. Rats weighing 200-300g were administered orally with ginseng ethanol extract (100mg/kg/day) for more than 10 days. The isolated papillary muscles from rat hearts were suspended in bath containing Krebs-Henseleit solution. When equilibration of contractile force of papillary muscle was reached, the rates of deterioration of contractile forces of papillary muscle from ginseng component treated rats were determined by washing with Ca-free Krebs-Henseleit solution and compared with that of normal hearts. At the beginning of washing, the rate of deterioration of contractile force of the papillary muscle was slower significantly in ginseng treated rats than in control rats, suggesting that calcium may be somehow involved in sustaining the contractility in ginseng treated hearts. Anoxia of papillary muscle with nitrogen gas to muscles inhibited the contractility, but differences between control and ginseng treated groups in the rate of deterioration were not observed. Influence of diltiazem, calcium blocker, on the contractility of papillary muscle from ginseng treated and control hearts was studied. Contractility of papillary muscle from control and ginseng treated hearts was inhibited by diltiazem in dose dependent manner but the inhibition of the ginseng treated muscles was much weak. The effect was significantly different. From the results, it seemed that slowing in deterioration rate of papillary muscle from ginseng treated hearts might be related to calcium which was mobilized from plasma membrane of internal organelle by ginseng.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.2
• /
• pp.357-361
• /
• 2011

The terminal current in voltage driven systems is an essential role for characterizing the pattern of electric discharge such as corona, breakdown, etc. Until now, to evaluate this terminal current, Sato's equation has been widely used in areas of high voltage and plasma discharge. Basically Sato's equation was derived by using the energy balance equation and its final form described physical meaning explicitly. To give more general abilities in Sato's equation, we present a generalized approach by directly using the Poynting's theorem incorporating the finite element method. When the magnetic field effect or the time-dependent voltage source is considered, this generalized energy method can be easily applicable to those problems with any dielectric media such as gas, fluid, and solid. As an alternative approach, the integral Ohm's law resulting in small numerical errors has an ability to be applied to multi-port systems. To test the generalized energy method and integral Ohm's law, first, the results from two prosed methods were compared to those from Sato's approach and an analytic solution in parallel plane electrodes. After verification, the generalized method was applied to the tip-sphere electrodes for evaluating the terminal current with three carriers and the Fowler-Nordheim field emission condition. From these results, we concluded that the generalized energy method can be a consistent technique for evaluating the discharge current with various dielectric materials or large magnetic field.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.3
• /
• pp.106-111
• /
• 2005

Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of $TiCl_4,\;BCl_3,\;CH_4,\;Ar,\;and\; H_2$. The effects of deposition variables such as substrate temperature, gas ratio, $R_x=[BCl_3/(CH_4+BCl_3)]$ on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB2, and amorphous carbon at low boron content, on the contrary, nanocrystallites $TiB_2$, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from $\~23 GPa$ of TiC to $\~38 GPa$ of $Ti_{0.33}B_{0.55}C_{0.11}$ coatings with increasing the boron content. The $Ti_{0.33}B_{0.55}C_{0.11}$ coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of $TiB_2$ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.103-107
• /
• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.212-212
• /
• 2000

Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950$^{\circ}C$. we deposited catalytic metal on Si susbstrate using thermal evaporation. The nanotubes reveal highly purified surface. The carbon nanotubes have multi-wall structure with a hollow inside and it reveals bamboo structure agreed with base growth model. Figure 1 shows SEM micrograph showing vertically aligned carbon nanotubes whih were grown at 950$^{\circ}C$ on a large area (20mm${\times}$30mm) of Si substrates. Figure 2 shows TEM analysis was performed on the carbon nanotubes grown at 950$^{\circ}C$ for 10 min. The carbon nanotubes are multi-wall structure with bamboo shape and the lack of fringes inside the nanotube indicates that the core of the structure is hollow. In our experiment, carbon nanotubes grown by the thermal CVD indicate base growth model.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.142.2-142.2
• /
• 2013

The effect of substrate on catalytic activity of CO oxidation with transition metal Platinum nanoparticles on doped and undoped TiO2 was investigated. Titanium dioxide was doped chemically with non-metal anions including nitrogen and fluorine. Undoped TiO2 was synthesized via simple conventional sol-gel route. Thin films of titania were developed by spin coating technique and the characterization techniques SEM, XRD, UV-Vis Absorption Spectroscopy and XPS were carried out to examine the morphology of films, crystal phase, crystallites, optical properties and elemental composition respectively. XPS analysis from doped TiO2 confirmed that the nitrogen site were interstitial whereas fluorine was doped into TiO2 lattice substitutionally. Catalytic activity systems of Pt/doped-TiO2 and Pt/undoped-TiO2 were fabricated to reveal the strong metal-support interaction effect during catalytic activity of CO oxidation reactions. By arc plasma deposition technique, platinum nanoparticles with mean size of 2.7 nm were deposited on the thin films of doped and undoped titanium dioxide. The CO oxidation was performed with 40 Torr CO and 100 Torr O2 with 620 Torr He carrier gas. Turn over frequency was observed two to three folds enhancement in case of Pt/doped TiO2 as compared to Pt/TiO2. The electronic excitation and the oxygen vacancies that were formed with the doping process were the plausible reasons for the enhancement of catalytic activity.