• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.1-6
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• 1998

Two kinds of the ac-plasma display panel (PDP) with the comb type and the matrix type electrodes were fabricated. The discharge properties were studied as a function of as species (Ne and Ne+He+Xe) and its pressure. The firing voltages (Vf) of the PDP with comb type electrodes were 159 V and 195 V under pure Ne and ne+He+Xe(68:30:2) gas mixture respectively. In case of PDP cell with the matrix type electrodes the Vf was increased to 200 V for pure Ne and 240 V for Ne+He+Xe gas mixture under the same gas pressure(300 mbar).

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.112-121
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• 2000

The paper investigates electrical discharge properties in neon gas mixed with xenon. The breakdown temperature T$\sub$b/ and voltage V$\sub$b/ are obtained in terms of the gas mixture ratio X. It is shown that the breakdown voltage decreases, reaches the minimum value at X=0.02 and then increases again, as the mixture ratio X increases from zero to unity. Therefore, mixing the neon gas with a few percent of xenon is the most beneficial to reduce the breakdown voltage. Plasma density at breakdown in neon gas mixed with xenon is described in terms of the gas mixture ratio. The optimum value of mixture ratio for highest plasma density is found to be Xm=0.03. A preliminary experiment of AC-PDP is carried out for neon gas mixed with a few percent of xenon to verify some of the theoretical models. The experimental data agree qualitatively well with theoretical predictions.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.384-390
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• 2001

The hollow cathode discharge is a kind of plasma formation scheme in which plasma is formed inside a hollow structure, the cathode, with current to a nearby anode of arbitrary shape. In this scheme, electrons reflex radially within the hollow cathode, establishing an efficient ionization mechanism for gas within the cavity. An existence condition for the hollow cathode effect is that the electron mean-free-path for ionization is of the order of the cavity radius. Thus the size of this kind of plasma source must decrease as the gas pressure is increased. In fact, the hollow cathode effect can occur even at atmospheric pressure for cathode diameters of order 10-100 $\mu\textrm{m}$. That is, the "natural" operating pressure regime for a "micro hollow cathode discharge" is atmospheric pressure. This kind of plasma source has been the subject of increasing research activity in recent years. A number of geometric variants have been explored, and operational requirements and typical plasma parameters have been determined. Large arrays of individual tiny sources can be used to form large-area, atmospheric-pressure plasma sources. The simplicity of the method and the capability of operation without the need for the usual vacuum system and its associated limitations, provide a highly attractive option for new approaches to many different kinds of plasma applications, including plasma surface modification technologies. Here we review the background work that has been carried out in this new research field.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.563-566
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• 2002

We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

• Journal of Korea Foundry Society
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• v.6 no.4
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• pp.284-289
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• 1986

Decarburization phenomena have been studied by plasma in stainless steel, plain carbon steel and cast iron. It was also investigated the movement of impurity element P,S in the plasma jet metal pool. The plasma jet was obtained by $Ar\;-\;CO_2$ gas mixture with 5 kVA DC power source. It produced enough temperature to dissociate into activated oxygen atom by reaction of $CO_2{\leftrightarrows}CO+O^+$ and it reacted with ${\underline{C}}$ in metal pool. Decarburization rate was increased about 5 times in comparing with the conventional induction melted metal pool by $CO_2$ gas decarburization. Even under the Ar plasma jet, decarburization was obtained by agitation of metal bath by $Ar^+$ bombardment and dilution phenomena of carbon atom under the very high plasma temperature. But heavy element P and S are not much removed because they are too heavy in mass to be activated by $Ar^+$ion bombardment. Desulphurization was achieved by $Ar\;-\;CO_2$ plasma in plain carbon steel and cast iron by the reaction of $SO_2({\underline{S}}+O^+)$. But dephosphorization could not be obtained by $Ar\;-\;CO_2$ plasma, because gaseous reaction of phosphorous oxide (${\underline{P}}+O^+$) was not existed.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.553-556
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• 2007

We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.601-605
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.7
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• pp.1211-1217
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• 2016

Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.141-141
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• 2013

We have generated the needle-typed nonthermal plasma jet by using an Ar gas flow at atmospheric pressure. Diagnostics of electron temperature anddensity is critical factors in optimization of the atmospheric plasma jet source in accordance with the gas flow rate. We have investigated the electron temperature and density of plasma jet by selecting the four metastable Ar emission lines based on the atmospheric collisional radiative model and radial profile characteristics of current density, respectively. The averaged electron temperature and electron density for this plasma jet are found to be ~1.6 eV and ~$3.2{\times}10^{12}cm^{-3}$, respectively, in this experiment. The densities of OH radical species inside the various bio-solutions are found to be higher by about 4~9 times than those on the surface when the argon bioplasma jet has been bombarded onto the bio-solution surface. The densities of the OH radicalspecies inside the DI water, DMEM, and PBS are measured to be about $4.3{\times}10^{16}cm^{-3}$, $2.2{\times}10^{16}cm^{-3}$, and $2.1{\times}10^{16}cm^{-3}$, respectively, at 2 mm downstream from the surface under optimized Ar gas flow 250 sccm.

• Journal of the Korean Institute of Gas
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• v.5 no.1
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• pp.15-20
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• 2001

The microwave plasma and catalytic reaction have been employed to investigate the activation of methane to hydrogen and higher hydrocarbons at low gas temperature. The catalytic activity of Fe, Ni, Pt Pd metal catalysts were also studied in this reaction system. With increasing plasma power at a $CH_{4}$ flow rate of 20 ml/min, C2+ products increased from 29 to $42\%$, whereas hydrogen from 60 to $65\%$. When catalysts were loaded below the plasma region, the selectivitity of ethylene md acetylene increased but the yield of C2+ products remained constant. The usage of ECR electric fie3d and Pd-Ni bimetal catalyst produced a minimum C2+ yield of $64\%$.