• Journal of Korean Society for Atmospheric Environment
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• v.16 no.E
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• pp.39-46
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• 2000

Volatile Organic Compounds (VOCs) are considered as the precursors of atmospheric ozone and photochemical smog formation. In particular, chemical plants have produced a lot of VOCs and thus they have been forced to reduce or remove air emissions from the on-site chemical facilities. For the effective removal of VOCs produced in the chemical plants, the authors employed a titanium oxide(TiO$_2$) mediated photo-catalytic oxidation method. The initiation methods employed in this study to produce oxygen radicals for th photo-catalytic oxidation of the VOCs were Ultra-Violet(UV), Non-Thermal Plasma(NTS), and a combination of Uv and NTP. This study focused on a comparison of the removal efficiencies of VOCs as a function of the initiation method such as NTP and/or UV techniques. Removal efficiency change of VOCs as was investigated as a function of the wavelength of the UV lamp(254, 302, and 365 nm) and the degree of TiO$_2$ coating (10 and 30%). In this study, it was identified that removal efficiencies if the VOCs under the normal air environment were much better than those under the nitrogen gas environment containing small amount of oxygen. Removal efficiency by NTP technique was much better than the UV or the combination of UV and NTP techniques. In a comparison if UV wavelengths employed, it was found that shorter wavelength showed better removal efficiency, compared with longer ones. When the removal efficiencies of VOCs were compared in terms of the degree of TiO$_2$ coating, the higher TiO$_2$coating showed better removal efficiency that the lower TiO$_2$ coating

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.72.2-72.2
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• 2010

평판형 고체산화물 연료전지 스택의 고온 밀봉 구조에 대하여 설명하고 스택 운전 후 사후 분석을 통하여 밀봉재와 금속 분리판의 계면반응에 대하여 고찰하였다. 대표적인 고온 밀봉재인 Barium-Silicate 계 결정화 유리와 Fe-Cr 계 금속 분리판은 스택의 작동온도인 $700{\sim}850^{\circ}C$ 에서 고온 반응을 통하여 계면에 반응생성물을 형성하는 것이 확인되었다. 이러한 계면반응은 장기 운전시 SOFC 스택 성능 저하의 원인이 되고, 열 싸이클(작동온도${\leftrightarrow}$상온)을 가하면 계면반응 생성물이 delamination 되어 밀봉구조가 파괴되어 수명을 단축시키게 된다. 계면반응은 Fe-Cr 계 금속 분리판의 산화물인 Cr 산화물, Fe 산화물이 밀봉유리 소재와 반응을 일으키는 것이 주요 원인으로 판명되었다. SOFC 스택에서 열 싸이클시 계면반응에 의하여 기밀도가 감소하는 현상이 확인되었으며, 밀봉 구조의 어느 부분에서 계면반응이 진행되는지 관찰하였다. 이러한 계면반응을 막기 위해서는 금속 분리판과 밀봉유리 사이에 계면반응을 억제하는 보호층을 형성하는 방법이 효과적이다. 본 연구에서는 보호층으로서 밀봉유리 및 Fe-Cr 계 금속 분리판과의 계면반응성이 낮고 열팽창 계수가 비슷한 Yttria Stabilized Zirconia 층을 APS(Atmospheric Plasma Spray) 공정을 이용하여 형성하였다. 밀봉유리/YSZ 보호층/금속분리판은 gas-tight 한 밀봉 구조를 형성하였으며, YSZ 보호층은 밀봉유리와 Fe-Cr 계 금속 분리판 소재와 계면반응을 효과적으로 억제하는 것이 확인되었다.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.4 no.2
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• pp.249-255
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• 2001

Methylmalonic acidemia is a rare congenital autosomal recessive metabolic disease. It is caused by blocking in the pathways of isoleucine, valine, threonine, methionine, cholesterol and odd-chain fatty acids to succinyl CoA, resulting in the increase of L-methylmalonyl CoA and methylmalonic acid. In most cases, there are symptoms such as recurrent vomitings, lethargy and laboratory abnormalities including metabolic acidosis and hyperammonemia from the neonatal period. We had a 6-month-old infant with methylmalonyl acidemia who presented with recurrent vomiting episodes since 3 months of age, failure to thrive and developmental delay. The laboratory findings showed hyperammoninemia and ketotic metabolic acidosis. Plasma amino acid analysis showed nonspecific finding. Urine organic acid ananysis by gas chromatography and mass spectrometry detected large amount of methylmalonic acid excreted in the urine. We restrained the supply of protein in the amount of 1~1.5 g/kg of body weight a day using leucine, isoleucine and valine-r-estrained milk and administered vitamine $B_{12}$, in the amount of 1mg per day. During the follow-up in the outpatient clinic, He could control his head and showed increased muscle strength.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.549-555
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• 2008

The thermal barrier coating must withstand erosion when subjected to flowing gas and should also maintain good stability and mechanical properties while it must also protect the turbine component from high temperature, hot corrosion, creep, and oxidation during operation. In this study we investigated the influence of subsurface layer, $Al_2O_3$ or NiCrCoAIY bond coat layer, on the indentation damage behavior of YSZ thermal barrier coating layers deposited by electron beam physical vapor deposition (EB-PVD). The bond coat is deposited using different process such as air plasma spray (APS) or spray of high velocity oxygen fuel (HVOF) and the thickness is varied. Hertzian indentation technique is used to induce micro damages on the coated layer. The stress-strain behaviors are characterized by results of the indentation tests.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.49.1-49.1
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• 2009

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를대량으로 배출하며 지구 온난화를 야기함에 따라, 석유를 대체할 새로운 에너지원에 대한 관심이 높아지고 있다. 많은 대체에너지 가운데, 청정하고 무한 재생 가능한대체에너지를 이야기할 때, 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광 발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 Texturing 과 Antireflecting coating 이있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역활을 한다. 반사 방지막으로 쓰이는 SiNx는 SiOx의 대체 물질로 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10 %에서 2 %로 줄일 수 있다. 나아가 고성능의 반사방지막은 박막의 균일도확보 및 passivation 공정이 필수적이라 판단된다. 따라서 본 연구에서는 PECVD 방법으로 SiH4와 NH3 gas 의 비율을 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray Diffraction 분석과 TEM (TransmissionElectron Microsopy) 을 통해 관찰하였으며, XPS (X-rayphotoelectron spectroscopy) 를 통해 화학적결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜분석하였다. 굴절율의 경우 Ellipsometry를 이용하여측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인하였다.

• Journal of The Korean Astronomical Society
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• v.35 no.4
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• pp.159-174
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• 2002

Cosmological hydrodynamic simulations of large scale structure in the universe have shown that accretion shocks and merger shocks form due to flow motions associated with the gravitational collapse of nonlinear structures. Estimated speed and curvature radius of these shocks could be as large as a few 1000 km/s and several Mpc, respectively. According to the diffusive shock acceleration theory, populations of cosmic-ray particles can be injected and accelerated to very high energy by astrophysical shocks in tenuous plasmas. In order to explore the cosmic ray acceleration at the cosmic shocks, we have performed nonlinear numerical simulations of cosmic ray (CR) modified shocks with the newly developed CRASH (Cosmic Ray Amr SHock) numerical code. We adopted the Bohm diffusion model for CRs, based on the hypothesis that strong Alfven waves are self-generated by streaming CRs. The shock formation simulation includes a plasma-physics-based 'injection' model that transfers a small proportion of the thermal proton flux through the shock into low energy CRs for acceleration there. We found that, for strong accretion shocks, CRs can absorb most of shock kinetic energy and the accretion shock speed is reduced up to $20\%$, compared to pure gas dynamic shocks. For merger shocks with small Mach numbers, however, the energy transfer to CRs is only about $10-20\%$ with an associated CR particle fraction of $10^{-3}$. Nonlinear feedback due to the CR pressure is insignificant in the latter shocks. Although detailed results depend on models for the particle diffusion and injection, these calculations show that cosmic shocks in large scale structure could provide acceleration sites of extragalactic cosmic rays of the highest energy.