• Clean Technology
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• v.19 no.2
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• pp.113-120
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• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• Clean Technology
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• v.7 no.3
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• pp.203-214
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• 2001

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.135-140
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• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.527-532
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• 2016

The effects of gas velocity and solid circulation rate on the axial solid holdup distribution have been determined in a 10 mm-I.D. ${\times}$ 800 mm-high circulating fluidized bed plasma reactor under reduced pressure (1torr). Polystyrene polymer powder and nitrogen gas are used as solid and gas materials respectively. The change of solid circulation rate by a large gas flow rate of the riser (40~80 sccm) is also possible by a relatively small gas flow rate of the solid recirculation part (6.6~9.9 sccm). The solid circulation rate in the reactor under reduced pressure increases with increasing aeration velocity in the solid recirculation part. The axial solid holdup in the riser decreases from the dense at the bottom to the dilute phase at the top section of the riser. Solid holdups at the axial positions in the riser increase linearly with increasing solid circulating velocity. From these results, we could determine the position of plasma load for good plasma ignition, maintain and plasma reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.234-234
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• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics and in industrial plasma engineering. We can understand the momentum, energy, and charge transport properties of the plasma using electron-neutral collision frequency.[1] The wave-cutoff method is a diagnostic method for the electron density measurement, but the cutoff peak value depends on gas pressure. The wave-cutoff signal becomes unclear as increasing gas pressure. The reason of pressure dependence is that the electron-neutral collision disturbs electron motion so that microwave can propagate through plasma at plasma frequency.[2] Using the pressure dependence of wave-cutoff method we can find the electron-neutral collision frequency. At first we tried to confirm this method using well known gas such as Ar. The cutoff signal decrease as increasing gas pressure (the simulation result). The wave-cutoff signal is unclear at a gas pressure of 500 mTorr. (electron density $1.0{\times}10^{10}/cm^3$, electron temperature 1.7 eV, electron -neutral collision frequency~1 GHz). In this condition, the electron-neutral collision frequency is closed to the wave-cutoff frequency.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.69-73
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• 2003

The atmospheric pressure plasma is regarded as an effective method for surface treatments because it can reduce the period of process and doesn't need expensive vacuum apparatus. The performance of non-transferred plasma torches is significantly depended on jet flow characteristics out of the nozzle. In order to produce the high performance of a torch, the maximum discharge velocity near an annular gap in the torch should be maintained. Also, the compulsory swirl is being produced to gain the shape that can concentrate the plasma at the center of gas flow. In this work, the distribution of gas flow that goes out to atmosphere through a plenum chamber and nozzle is analyzed to evaluate the performance of atmospheric pressure plasma torch which can present the optimum design of the torch. Numerical analysis is carried out with various angles of an inlet flow velocity. Especially, three-dimensional model of the torch is investigated to estimate swirl effect. We also investigate the stabilization of plasma distribution. For analyzing the swirl in the plenum chamber and the flow distribution, FVM (finite volume method) and SIMPLE algorithm are used for solving the governing equations. The standard k-model is used for simulating the turbulence.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.1-196.1
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• 2013

반도체의 device design rule이 shrink 됨에 따라 공정이 난이도가 높아지고 이에 따른 관리가 어려워지고 있다. 특히 미세 particle에 대한 제어의 필요성은 보다 커졌다. 진공 chamber 발생하는 미세 particle의 주요 원인으로는 공정 중 발생한 polymer, chamber 내 부품의 식각 및 스퍼터링에 의한 부산물 등이 있다. Plasma 공정 도중 발생한 particle은 plasma 내 전자에 의해 대전되어 음의 전하량을 가지게 된다. 음의 전하량을 가진 particle은 plasma와 wafer의 경계면에서 형성되는 sheath 때문에 wafer에 도달하지 못하고 plasma 내에 부유하게 된다. 이러한 particle은 plasma가 꺼지게 되면 sheath가 사라지면서 wafer에 도달하게 되고 wafer의 오염을 유발하게 되고 생산 수율을 저하시키는 요인이 된다. 이러한 이유로 최근 plasma 공정에서는 공정 중 발생하는 부유성 particle에 대한 관리가 중요해졌다. 이를 관리하기 위해 plasma를 끄기 전 부유성 particle을 제거하는 방안을 고안하고 평가를 진행하였다. 공정이 끝나고 plasma가 꺼지기 전 plasma를 유지하여 부유성 particle이 wafer에 도달하지 못하는 상태에서 gas purge를 실시한다. 이러한 과정 후 plasma를 끄게 되면 부유성 particle이 wafer에 도달하는 것을 감소시키게 된다. 이번 평가를 통해 부유성 particle에 대해서 대략 20%의 감소 효과를 볼 수 있었다. 이를 토대로 향후 조건 최적화 후 적용 시 particle 감소뿐 만 아니라 수율 향상에도 기여할 수 있을 것이라 기대된다.

• Journal of the Korean institute of surface engineering
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• v.46 no.3
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• pp.133-138
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• 2013

We have developed a 2D axi-symmetric numerical model for an inductively coupled plasma system in order to analyze gas mixing effect through a narrow gap shower head. For frictional flow, holes of 0.5 mm diameter and 2 mm length are approximately modeled in 2D. Gas velocity distribution 10 mm below the shower head showed 2 times difference between the center and the edge at 10 mTorr. At 10 mm above the wafer, it was increased to 6 times difference due to the pumping duct effect. The model with a 5 mm height buffer region of a shower head showed reasonable behavior of Ar discharge. The density of Ar metastable showed additional peak inside the buffer region around the edge holes.

• Journal of the Korean Institute of Gas
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• v.18 no.1
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• pp.1-7
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• 2014

In this study, plasma reformer technology with a LPG injector was investigated. It was developed with injection of LPG fuel and air in a region where the plasma discharge to make the thermal decomposition carbon fuel and to generate additional hydrogen. As a result of reforming test, when power is 70~100W supply, about HC 0.7% of the full reformed gas and hydrogen was generated from 1.2 to 1.5 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.323-326
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• 1998

The current-voltage characteristic have been measured in a gas stabilized DC arc generated in a non-transferred arc plasma torch operating on a mixture of argon and nitrogen. Relation between voltage and current to these arcs has been examined by plasma power and current under different flow rates and gas mixture ratios. Firstly, the voltage and current of arc plasma used argon was measured and secondly, in argon-nitrogen mixed gas regime, the flow rate of nitrogen was increased slowly. When the flow rate of nitrogen was increased, electrode drop of potential was increased.