• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1151-1154
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• 2003

Ultraviolet rays, OH H O radical and $O_3$ produced by the streamer discharge in water are widely used to deactivate microorganisms and remove organic contaminants in water and the dominant factor of these decomposition is the oxidized reaction of hydrogen peroxide and dissolved $O_3$ in water. In this paper, the barrier discharge was used to create plasma in a gas, liquid and solid medium and the electrode with the reactor combined barrier with packed type(BPR) was made as noncontact way against water so that the effect of water characteristic change by the erosion of electrodes exposing in water should be minimized. The active radical and $O_3$ gas generated in plasma region were reacted into the water as electrode so that at the same time a dissolved $O_3$ and hydrogen peroxide were formed in water and The change of pH and conductivity were measured.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.357-360
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• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

• Journal of Korean Society on Water Environment
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• v.30 no.4
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• pp.394-402
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• 2014

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and oxygen flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the 2nd voltage (4 kV to 15 kV) was increase, RNO degradation was increased and, generated $H_2O_2$ and $O_3$ concentration were increased. The conductivity of the solution was not influencing the RNO degradation, $H_2O_2$ and $O_3$ generation. The pH effect on RNO degradation was not high. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.255.2-255.2
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• 2014

Electrode erosion is indispensable for atmospheric plasma systems, as well as for switching devices, due to the high heat flux transferred from arc plasmas to contacts, but experimental and theoretical works have not identified the characteristic phenomena because of the complex physical processes. Our investigation is concerned with argon free-burning arcs with anode erosion at atmospheric pressure by computational fluid dynamics (CFD) analysis. We are also interested in the energy flux and temperature transferring to the anode with a simplified unified model of arcs and their electrodes. In order to determine two thermodynamic quantities such as temperature and pressure and flow characteristics we have modified Navier-Stokes equations to take into account radiation transport, electrical power input and the electromagnetic driving forces with the relevant Maxwell equations. From the simplified self-consistent solution the energy flux to the anode can be derived.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.278-278
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• 2007

Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.16-20
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• 2005

In order to improve electrical conductivity and mechanical properties of 8YSZ SOFC electrolyte material, we used Al₂O₃ as an additive and applied the spark plasma sintering (SPS) method. The sintered bodies were densified above 96 ％ of theoretical density at 1200℃ and possessed microstructures composed of homogeneous grains less than 1 ㎛ in size. The addition of Al₂O₃ improved fracture toughness and bending strength by inhibiting grain growth of 8YSZ and increased total ionic conductivity because grain interior conductivity appeared to remain constant and grain boundary conductivity increased. It was assumed that the dissolution of Al₂O₃ into 8YSZ which was inevitable problem at commercial sintering method was effectively prohibited by the SPS technique with a relatively low sintering temperature and the reaction between Al₂O₃ and SiO₂ present at grain boundary to produce the crystalline Al/sub 2-x/Si/sub l-y/O/sub 5/ phase, resulting in the increase of grain boundary conductivity.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.438-444
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• 1999

The characterization of the reactively sputtered ITO layer on the PET film has been studied. The PEM device has been used to determine the optimum stoichimetry through control of the amount of oxygen incorporated into the alloy target and the optimum operation conditions to produce films with the highest electrical conductivity and visible transparency. The PEP film was pre-treated under the plasma discharge condition to remove the adsorbed gases and to modify the surface morphology. The results revealed that by adjusting the flow rate of oxygen with the spectral intensity of indium target, the composition of plasma gas can be kept constant during the entire deposition period. The resistivity of ITO film obtained was fond to be about 37$\Omega\Box$, and the transmittance of visual range was about 86%.

• The KSFM Journal of Fluid Machinery
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• v.11 no.4
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• pp.7-13
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• 2008

The computational investigation is performed to find out the interaction of arc plasmas with surrounding materials and the thermal flow characteristics in a PASB (Puffer-Assisted Self-Blast) chamber, which is one of new breaking concepts in $SF_6$ switchgears. It is very important to define the flow and mass transfer happened during the full arcing history for further understanding complex physics inside the chamber. In this study, we have considered two diffusion processes by the hot arc plasma, one is PTFE nozzle ablation and the other is Cu electrode evaporation, simultaneously. It was found that the principle of the pressure-rise inside the chamber is confirmed by the computational results and the increase of the electrical conductivity of the residual gas near current zero is critical to the chamber design.