• 한국세라믹학회지
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• 제49권5호
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• pp.399-403
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• 2012

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.

• 한국물환경학회지
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• 제28권3호
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• pp.401-408
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• 2012

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which that are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and air flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the increased of the 2nd voltage (4 kV to 15 kV), RNO degradation, $H_2O_2$ and $O_3$ generation were increased. The conductivity of the solution was not influencing the RNO degradation and $H_2O_2$ and $O_3$ generation. The effects pH was not high on RNO degradation. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• 한국세라믹학회지
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• 제56권3호
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• pp.317-324
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• 2019

Cr-diamond-like carbon (Cr-DLC) films were deposited using a hybrid method involving both physical vapor deposition and plasma-enhanced chemical vapor deposition. DLC sputtering was carried out using argon and acetylene gases. With an increase in the DC power, the Cr content increased from 14.7 to 29.7 at%. The Cr-C bond appeared when the Cr content was 17.6 at% or more. At a Cr content of 17.6 at%, the films showed an electrical conductivity of > 363 S/cm. The current density was 9.12 × 10^-2 ㎂/㎠, and the corrosion potential was 0.240 V. Therefore, a Cr content of 17.6 at% was found to be optimum for the deposition of the Cr-DLC thin films. The Cr-DLC thin films developed in this study showed high conductivity and corrosion resistance, and hence, are suitable for applications in separators.

• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Design & Manufacturing
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• 제15권3호
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• pp.7-12
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• 2021

Plastic injection molds used for rapid heating and cooling must minimize surface damage due to friction and maintain excellent thermal and low electrical conductivity. Accordingly, various surface treatments are being applied. The properties of Al₂O₃ coating and DLC coating were compared to find the optimal surface treatment method. Al₂O₃ coating was deposited by thermal spray method. DLC films were deposited by sputtering process in room temperature and high temperature PECVD (Plasma enhanced chemical vapor deposition) process in 723 K temperature. For the evaluation of physical properties, the electrical and thermal conductivity including surface hardness, adhesion and wear resistance were analyzed. The electrical resistance of the all coated samples was showed insulation properties of 24 MΩ/sq or more. Especially, the friction coefficient of high temp. DLC coating was the lowest at 0.134.

• 전기화학회지
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• 제6권1호
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• pp.6-12
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• 2003

메탄의 플라즈마 열분해 방법에 의해 제조된 카본블랙을 $2\times10^{-2}torr$진공상태에서 $800,\;1300,\;2100^{\circ}C$의 온도로 열처리하여 원시료를 포함하여 물리적$\cdot$화학적 특성이 다른 4개의 시료를 준비하였다. 이 시료들을 리튬이차전지 양극 활물질인 $LiCoO_2$의 도전재로 사용하여 $Li/LiCoO_2$ 반쪽전지를 구성하고 변화된 도전재의 특성에 따른 셀의 전기화학적 특성 차이를 조사하였다 시료를 열처리하였을 때 표면화학그룹이 제거되고 전도도가 높아지면서 도전재로 사용하였을 때 사이클 특성 및 초기 방전용량이 향상되었다. 그러나, $2100^{\circ}C$에서 열처리한 시료를 도전재로 사용한 경우에는 사이클 특성 및 rate capability가 저하되는 것으로 나타났다. 이것은 플라즈마 블랙의 열처리에 의한 구조 변화에 따른 전극 내 분산 특성의 변화가 전도도 특성과 복합적으로 작용하여 제작한 셀의 전기화학적 특성에 영향을 미치기 때문으로 사료된다 열처리 온도가 높아질수록 카본블랙 표면의 관능기가 제거되면서 플라즈마 블랙의 전도도가 증가하였으나, 흑연화의 진행으로 나타난 agglomeration의 증가가 전극 내 분산 특성을 저하시키는 것으로 사료된다 그 결과 $800^{\circ}C$에서 열처리한 시료의 사이클 특성이 가장 우수하였다.

• Environmental Engineering Research
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• 제24권3호
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• pp.412-417
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• 2019

This paper presents the results of using cold plasma to treat surface water for domestic use purpose. Experimental results showed that cold plasma was an effective method for destroying bacteria in water. After treatment with cold plasma, concentration of coliform and Escherichia coli dramatically reduced. Besides, cold plasma significantly removed water odor, increased dissolved oxygen and decreased the concentration of chemical oxygen demand. However, cold plasma significantly raised the concentration of nitrite and nitrate. Other disadvantages of treating with cold plasma were conductivity increase and pH reduction. Pretreatment steps of coagulation, flocculation, sedimentation and sand filtration followed by disinfection with cold plasma exhibited a high efficiency in surface water treatment. All parameters of surface water after treatment by using the prototype satisfied with the allowance standard of domestic water quality.

• 한국재료학회지
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• 제11권9호
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• 한국분말재료학회지
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• 제25권2호
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• pp.158-164
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• 2018

Multi-walled carbon nanotube (MWCNT)-copper (Cu) composites are successfully fabricated by a combination of a binder-free wet mixing and spark plasma sintering (SPS) process. The SPS is performed under various conditions to investigate optimized processing conditions for minimizing the structural defects of CNTs and densifying the MWCNT-Cu composites. The electrical conductivities of MWCNT-Cu composites are slightly increased for compositions containing up to 1 vol.% CNT and remain above the value for sintered Cu up to 2 vol.% CNT. Uniformly dispersed CNTs in the Cu matrix with clean interfaces between the treated MWCNT and Cu leading to effective electrical transfer from the treated MWCNT to the Cu is believed to be the origin of the improved electrical conductivity of the treated MWCNT-Cu composites. The results indicate the possibility of exploiting CNTs as a contributing reinforcement phase for improving the electrical conductivity and mechanical properties in the Cu matrix composites.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.