• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.1-4
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• 2002

As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

• 한국표면공학회지
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• 제29권5호
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• pp.487-493
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• 1996

Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.1-3
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• 2003

평판형 안테나를 채택한 TCP (Transformer Coupled Plasma) 형태의 CVD 장비를 이용하여 비정질의 실리콘 박막을 증착 하였다. 비정질 실리콘 박막은 태양전지 및 TFT-LCD 등의 디스플레이 제품 등에 다양하게 적용되고 있는데, 일반적으로 CCP(Capacitor Coupled Plasma) 형태의 CVD 장비에서 증착되어 왔다. TCP-CVD 장비는 CCP-CVD에 비해 플라즈마 내의 높은 이온밀도 및 저압, 저온에서 공정이 가능할 뿐만 아니라, 기판 바이어스 전압을 독립적으로 조절할 수 있어 이은에 의한 증착막의 결함을 낮출 수 있는 장점이 있다. 본 발표에서는 자체 기술로 제작된 TCP-CVD의 소개와 증착된 비정질 실리콘 박막의 특성평가를 위한 라만 분석 및 dark conductivity 데이타를 다루었다. 또한 비정질 실리콘 박막의 반도체 소자의 응용성을 보기 위하여 3족 및 5족의 불순물을 도핑하여 전기전도도의 변화를 측정하였다.

• 한국결정성장학회지
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• 제15권1호
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• pp.10-15
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• 2005

Microwave plasma CVD 다이아몬드/Ti 박막 성장 시 CH₄/H₂ 가스의 유량비율, chuck bias, microwave power 등이 다이아몬드 박막의 구조적 특성과 입자밀도에 미치는 영향에 대하여 조사하였다. 2∼3 CH₄ Vol.% 조건일 때 sp³-결합성의 탄소 neutral 들이 우선적으로 형성되고 sp²-결합성의 탄소 neutral 들이 선택적으로 제거됨에 따라 양질의 다이아몬드 박막을 얻을 수 있었으며, 다이아몬드 입자 증착 기구를 해석하였다. Ti 기판에 걸어준 negative chuck bias가 증가함에 따라 다이아몬드 핵생성이 증진되어 다이아몬드 입자 밀도가 증가하였고, 임계 전압은 약 -50V 임을 확인하였다. 또한, microwave power가 증가함에 따라 미세결정질(micro-crystalline) graphite 층 생성이 제어되고 다이아몬드 층이 형성됨을 확인하였다.

• 조명전기설비학회논문지
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• 제28권9호
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• 한국재료학회지
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• 제7권10호
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• pp.851-855
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• 1997

본 실험에서는 저유전율 층간절연물질로서 SiOF박막을 ECR plasma CVD를 이용하여 증착하였다. 또한 증착시에 발생시킨 플라즈마의 특성 분석을 위하여 Langmuir probe를 반응챔버에 부착하여 플라즈마 밀도, 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF 박막을 분석한 결과, 가스유량비(SiF$_{4}$/O$_{2}$)가 0.2에서 1.6으로 증가하였을 때 불소의 함량은 약 5.3at%에서 14.5at%로 증가하였으며, 굴절률은 1.501에서 1.391로 감소하였고 이는 불소 첨가에 의한 박막의 밀도감소에 의한 것으로 생각된다. 또한 박막의 유전상수는 가스유량비가 1.0(11.8qt.% F함유)일 때 3.14였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.