• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.37-40
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• 2001

New package process for PDP was proposed based on the glass-to-glass vacuum-electrostatic bonding process and tubeless packaging concept derived from the previous study. Hermeticity and operating performance of PDP test panel through the seal-off process application and the possibility for practical use might be high if the process simplicity and productivity-related effort was sequentially carried out.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1480-1481
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• 2008

In this paper, we present surface treatments for achieving bonds between PMMA and PDMS substrates. Silane primer is used for the formation of hydroxyl group on PMMA surfaces. The formed hydroxyl groups enhance the bonding strength of PDMS-PMMA substrates without channel clogging and structure deformation. The bonding strength on the different surface treatments (include oxygen plasma, 3-APTES, and corona discharge) is evaluated to find optimal bonding condition. The maximum bonding strength at the optimal surface treatment is over 300 kPa. The surface treatment using silane primer can be used to the bonding process of Micro-TAS and Lab-on-a-Chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Textile Coloration and Finishing
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• v.19 no.1 s.92
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• pp.45-52
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• 2007

Polyacrylonitrile(PAN) fiber was treated with low-temperature plasmas of argon and oxygen for surface modification, and its surface chemical structure and morphology were examined by a field emission scanning electron microscope(FESEM) and a Fourier-transform infrared microspectroscopy(IMS). The argon-plasma treatment caused the only mechanical effect by sputtering of ion bombardment, whereas the oxygen plasma brought about a chemical effect on the PAN fiber surface. The experimental evidences strongly suggested that cyclization of nitrile group and crosslinking were likely to occur in the oxygen-plasma treatment. On the other hand, with the argon-plasma treatment, numerous my pits resulted in ranging from several tens to hundreds nanometers in radius. The plasma sensitivity of functional groups such as C-H, $C{\equiv}N$, and O-C=O groups in the PAN fiber was dependent on their chemical nature of bonding in the oxygen-plasma, in which the ester group was the most sensitive to the plasma. Vacuum-ultraviolet(VUV) radiation emitted during plasma treatment played no substantial role to alter the surface morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.292-300
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• 2006

In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about $99\;\%$ at the specific energy of 40 J/L with passing through manganese dioxide. C=C ${\pi}$ bond cleavage of TCE substances gave DCAC, which has the single bond of C-C through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about $3{\sim}4\;eV$ compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into COx is required to about 400 J/L, but $CO_2$ selectivity remains about $60\;\%$.

• Composites Research
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• v.23 no.5
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• pp.1-7
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• 2010

To increase the adhesive strength of acrylonitrile butadiene rubber(NBR) and steel plate, the atmospheric pressure flame plasma(APFP) treatment device is applied. The effect of various conditions(processing velocity and distance) is experimentally investigated to ascertain the optimum conditions to yield the best adhesive properties. It is found that the optimum distance between burner port and steel plate is 40mm and the optimum processing velocity is 50m/min at given condition. When the surface is coated twice with the bonding agent, the adhesion strength of APFP treated steel plate is increased to about 20.5%. It suggests that the surface modification of steel by flame plasma treatment at atmospheric pressure is a proper and applicable method to improve the adhesion strength between steel and rubber.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.552-553
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• 2005

In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about 99% at the specific energy 40J/L with passing through manganese dioxide. C=C $\pi$ bond cleavage in TCE gave DCAC (single bond, C-C) through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about 3 ~ 4 eV compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into $CO_X$ is required to about 400J/L.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.