• 제목/요약/키워드: Plasma Bonding

검색결과 249건 처리시간 0.026초

BTMSM/$O_2$ 고유량으로 증착된 low-k SiOCH 박막의 전기적인 특성 (Electrical characteristics of low-k SiOCH thin film deposited by BTMSM/$O_2$ high flow rates)

  • 김민석;황창수;김홍배
    • 반도체디스플레이기술학회지
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    • 제7권1호
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    • pp.41-45
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    • 2008
  • We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

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폐목재(廢木材) 활용(活用)을 위한 플라즈마 처리(處理) 효과(效果)에 대한 연구(硏究) (A Study on Effect of Plasma Treatment for Waste Wood Application)

  • 김미미;임중연
    • 자원리싸이클링
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    • 제22권2호
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    • pp.18-21
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    • 2013
  • 본 실험에서는 상압플라즈마에 의한 목분의 표면개질에 대해 조사하였다. 복합재는 목분과 폴리프로필렌을 이용하여 제작되었다(목분 : 폴리프로필렌=55wt% : 45wt%). 상압플라즈마는 carrier gas로 헬륨과 HMDSO를 모노머로 사용하였고 3 KV, $17{\pm}1$KHz, 2 g/min의 조건에서 처리하였다. 폐목분의 인장강도는 상압플라즈마 처리를 통해 18.5 MPa에서 21.2 MPa로 14.6% 증가하였고 단일수종목분의 경우에도 21.5 MPa에서 23.4 MPa로 8.8% 증가하였다. 이것으로 상압플라즈마 처리는 목분의 표면을 개질하여 폴리프로필렌과의 계면결합력을 증가시켜주는 것을 확인하였다.

Enhanced thermomechanical properties of poly(ethylene oxide) and functionalized bacterial cellulose nanowhiskers composite nanofibers

  • 윤옥자
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.376-376
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    • 2016
  • Poly(ethylene oxide) (PEO)/functionalized bacterial cellulose nanowhiskers (f-BCNW) (0.1 wt%) composite nanofibers were fabricated by electrospinning process and the thermomechanical properties were significantly enhanced more than the PEO and PEO/bacterial cellulose nanowhiskers (BCNW) (0.1 wt%) composite nanofibers. The functionalization of BCNW (f-BCNW) was performed by microwave plasma treatment for effects of nitrogen functionalization of chemically-driven BCNW. The N-containing functional groups of f-BCNW enhanced chemical bonding between the hydroxyl groups of the polymer chains in the PEO matrix and diameter size of PEO/f-BCNW (0.1 wt%) composite nanofibers were decreased more than PEO and PEO/BCNW (0.1 wt%) composite nanofibers on the same concentration. The strong interfacial interactions between the f-BCNW nanofillers and polymer matrix were improved the thermomechanical properties such as crystallization temperature, weight loss and glass transition temperature (Tg) compared to PEO and PEO/BCNW composites nanofibers. The results demonstrated that N2 plasma treatment of BCNW is very useful in improving thermal stability for bio-applications.

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Ni계 벌크 비정질 복합재의 제조 (Synthesis of Ni-based Bulk Metallic Glass Composites)

  • 이진규
    • 한국분말재료학회지
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    • 제15권4호
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    • pp.297-301
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    • 2008
  • The Ni-based bulk metallic glass matrix composites were fabricated by spark plasma sintering of mixture of gas-atomized metallic glass powders and ductile brass powders. The successful consolidation of metallic glass matrix composite was achieved by strong bonding between metallic glass powders due to viscous flow deformation and lower stress of ductile brass powders in the supercooled liquid state during spark plasma sintering. The composite shows some macroscopic plasticity after yielding, which was obtained by introducing a ductile second brass phase in the Ni-based metallic glass matrix.

RPCVD를 이용한 SiOF박막의 형성 및 특성 (Formation and Characterization of SiOF films using Remote Plasma Enhanced Chemical Vapour Deposition)

  • 이상우;김제덕;김광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.105-108
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    • 1995
  • The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

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펄스 마그네트론 스퍼터링 음극의 열전달 해석 (Heat Transfer Analysis of a Pulse Magnetron Sputtering Cathode)

  • 주정훈
    • 한국표면공학회지
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    • 제41권6호
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    • pp.274-278
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    • 2008
  • 3-dimensional numerical analysis for a rectangular magnetron cathode model is done to predict cooling characteristics of high power sputtering system for ZnO deposition. It includes cooling channel design, heat transfer analysis of a target, bonding layer and backing plate. In order to model erosion profiles of a target, ion current density distribution from 3D Monte Carlo simulation is used to distribute total sputtering power to 5 discrete regions. At 3 kW of sputtering power and cooling water flow of 1 liter/min at $10^{\circ}C$, the maximum surface temperature was $45.8^{\circ}C$ for a flat new target and $156^{\circ}C$ for a target eroded by 1/3 of its thickness, respectively.

Analysis of nano-cluster formation in the PECVD process

  • Yun, Yongsup
    • Journal of Advanced Marine Engineering and Technology
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    • 제37권2호
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    • pp.144-148
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    • 2013
  • In this paper, the ultra water-repellent thin films were prepared by RF PECVD. On the basis of surface morphology, chemical bonding states and plasma diagnostics, a formation model of clusters for the ultra water-repellent films was discussed from considerations of formation process and laser scattering results. Moreover, using laser scattering method, the relative change of quantity of nano-clusters or size of agglomerates could be confirmed. From the results, the films were deposited with nano-clusters and those of agglomerates, which formed in organosilicon plasma, and formation of agglomerates were depended on the deposition time.

플라즈마 CVD 방법에 의한 oxynitride막의 특성에 관한 고찰 (A Study on the Characteristics of Oxynitride film Deposited by Plasma CVD)

  • 서강원;백광균;권정열;이철진;정창경;이헌용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1180-1182
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    • 1993
  • In this paper, studing for the formative characterizations, bonding structures and hydrogen atom content in layer that oxynitride films deposited by Plasma CVD was investigated adaptive possibility for intemediate layer or final passivation layer of ULSI semiconductor devices.

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Characterion of Calcium Phosphate Films Grown on Surgicl Ti-6AI-4V By Ion Beam Assisted Deposition

  • Lee, I-S.;Song, J-S.;Choi, J-M;Kim, H-E.
    • 한국진공학회지
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    • 제7권s1호
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    • pp.30-36
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    • 1998
  • The plasma-spray technique is currently the most frequently used method to produce calcium phosphate coatings. Hydroxyapatite(HAp), one form of calcium phosphate, is preferred by its ability to form a direct bond with living bone, resulting in improvements of implant fixation and faster bone healing. Recently, concerns have been raised regarding the viable use and long-term stability of plasma-spray HAp coatings due to its nature of comparatively thick, porous, and poor bonding strength to metal implants. Thin layers (maximum of few microns) of calcium phosphate were formed by an e-beam evaporation with and without ion bombardments. The Ca/P ration of film was controlled by either using the evaporants having the different ration of Ca/P with addition of CaO, or adjusting the ion beam assist current. The Ca/P ration had great effects on the structure formation after heat treatment and the dissolution bahavior. The calcium phosphate films produced by IBAD exhibited high adhesion strength.

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Si(100) 표면에 대한 plasma 처리 효과 (Effects of plasma processes on the surface of Si(100))

  • 조재원;이재열
    • 한국진공학회지
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    • 제8권1호
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    • pp.20-25
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    • 1999
  • 여러 가지 방법의 plasma 표면 처리와 산화 공정이 $SiO_2-Si$(100) 계면에 미치는 물리적 영향을 angle resolved uv-photoelectron spectroscopy(ARUPS)를 이용하여 연구하였다. 표면은 ex situ 방법과 함께 in situ 수소 플라즈마를 이용하여 처리되어 졌으며, 이것은 고진공 고온 열 처리 방법과 비교되어졌다. ARUPS 빛띠 상에 나타난 산화물 가전자 띠에 대한 특징적인 peak 위치는 표면 처리 및 산화 공정 방법에 따라 이동하였다. 이러한 peak의 이동은 Si에서의 띠휨에 의한 것으로 분석되어졌다. 또한 peak 이동의 원인으로 Si-SiO2 계면에 형성된 결점과 표면 처리 공정에 따라 달라지는 표면 거칠기 등을 고려할 수 있었다. 여러 공정에 대한 ARUPS 결과를 비교함으로써 $Si--SiO_2$(계면 결합이 표면 처리 및 산화 방법에 깊이 관련되어 있음을 결론지을 수 있었다. 산소 plasma 공정은 가장 작은 band bending을 보여주었다.

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