Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.07b
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- Pages.1180-1182
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- 1993
A Study on the Characteristics of Oxynitride film Deposited by Plasma CVD
플라즈마 CVD 방법에 의한 oxynitride막의 특성에 관한 고찰
- Seo, Kang-Won (Myong Ji University) ;
- Baik, Kwang-Kyun (Myong Ji University) ;
- Kwon, Jung-Youl (Myong Ji University) ;
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Lee, Cheol-Jin
(Korea University)
;
- Jung, Chang-Kyung (Myong Ji University) ;
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Lee, Heon-Yong
(Myong Ji University)
- Published : 1993.07.18
Abstract
In this paper, studing for the formative characterizations, bonding structures and hydrogen atom content in layer that oxynitride films deposited by Plasma CVD was investigated adaptive possibility for intemediate layer or final passivation layer of ULSI semiconductor devices.
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