• Journal of Sensor Science and Technology
• /
• v.8 no.1
• /
• pp.53-62
• /
• 1999

Micro polysilicon actuators, which are widely used in the field of MEMS (Microelectromechanical System) technology, were fabricated using polysilicon thin layers. Polysilicon deposition were carried out to have symmetrical layer structures with a LPCVD (Low Pressure Chemical Vapor Deposition) system, and we have measured physical characteristics by micro test patterns, such as bridges and cantilevers to verify minimal mechanical stress and stress gradient in the polysilicon layers according to the methods of mutilayer deposition, doping, and thermal treatment, also, analyzed the properties of each specimen, which have a different process condition, by XRD, and SIMS etc.. Finally, the fabricated planar polysilicon resonator, symmetrically stacked to $6.5{\mu}m$ thickness, showed Q of 1270 and oscillation ampitude of $5{\mu}m$ under DC 15V, AC 0.05V, and 1000 mtorr pressure. The developed micro polysilicon resonator can be utilized to micro gyroscope and accelerometer sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.4
• /
• pp.271-274
• /
• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• Journal of Korean Society of Transportation
• /
• v.18 no.4
• /
• pp.107-115
• /
• 2000

We suggest a method which solves the planar, two vehicle collision reconstruction problem. The method based on the Principle of impulse and momentum determines the pre-impact velocity components from Post-impact velocity components, vehicle Physical data and collision geometry. A novel feature is that although the impact coefficients such as the restitution coefficient and the impulse ratio are unknown, the method can estimate automatically the coefficients and calculate the pre-impact velocity components. This reverse calculation is important for vehicle accident reconstruction, since the pre-impact velocities are unknown and Post-impact Phase is the starting Point in a usual collision analysis. However. an inverse solution is not always Possible with the analytical rigid-body impact model. Mathematically, one does not exist under the common velocity condition. On the other hand, our method has a capability of reverse calculation under the condition if the absorbed energy during the collision process can be estimated using the crush profile. To validate the developed collision reconstruction a1gorithm, we use car-to-car collision test results. The analysis and experimental results agree well in the impact coefficients and the Pre-impact velocity components.

• Journal of architectural history
• /
• v.9 no.2 s.23
• /
• pp.85-100
• /
• 2000

This paper is a study of the Beaux-Arts discipline of architecture, as it was established during the late nineteenth century in America. It focuses on trio particular modes of vision and representation that were at the heart of the discipline. The paper argues that Beaux Arts vision was centered on what may be called 'planar vision'; a mode of seeing through which the multiple aspects of the architectural design imbedded in the plan were read and re-interpreted. Similarly Beaux-Arts training in drawing required its student to draw within the multiple layers of historical traces; the new design being in effect a new layer placed on often unseen traces of monumental precedent. The theoretical basis of this practice was not based on history but on the concept of composition. Composition, in the French tradition was regarded more a matter of practice than theory. The Anglo-American discourse on composition, on the other hand, formed a body of theoretical literature based on formalist assumptions. There was, however, a fundamental gap between these formalist theories of composition and the 'layered' modes of vision and drawing involved in the design process. This practice leaned more on the modern romantic notion of 'intuition' for its theoretical basis, once again forming an immanent conflict with the mimetic practice of classical and historical architecture. The paper draws a picture of a discipline centered on a 'theory of the plan,' a potentially modern discipline integrated with classical forms and details. It was clearly effective as a practice. However, structured by conflicts between theory and practice, history and form, mimesis and intuition, the Beaux-Arts was unable to defend itself at the philosophical and theoretical level the modernists engaged their attacks on this system. At the same time, the paper poses the question of how different modern architecture is from this system. Is not the 'theory of plan,' in its many transformations and guises, still the central discipline of twentieth century modern architecture, and is it not structured by basically the same kind of conflicts and paradox that were immanent to the Beaux-Arts system.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.8
• /
• pp.2163-2169
• /
• 2010

G-protein coupled receptors (GPCRs) are involved in a wide variety of physiological processes and are known to be targets for nearly 50% of drugs. The various functions of GPCRs are affected by their cognate ligands which are mainly classified as agonists and antagonists. The purpose of this study is to develop a Bayesian classification model, that can predict a compound as either human GPCR agonist or antagonist. Total 6627 compounds experimentally determined as either GPCR agonists or antagonists covering all the classes of GPCRs were gathered to comprise the dataset. This model distinguishes GPCR agonists from GPCR antagonists by using chemical fingerprint, FCFP_6. The model revealed distinctive structural characteristics between agonistic and antagonistic compounds: in general, 1) GPCR agonists were flexible and had aliphatic amines, and 2) GPCR antagonists had planar groups and aromatic amines. This model showed very good discriminative ability in general, with pretty good discriminant statistics for the training set (accuracy: 90.1%) and a good predictive ability for the test set (accuracy: 89.2%). Also, receiver operating characteristic (ROC) plot showed the area under the curve (AUC) to be 0.957, and Matthew's Correlation Coefficient (MCC) value was 0.803. The quality of our model suggests that it could aid to classify the compounds as either GPCR agonists or antagonists, especially in the early stages of the drug discovery process.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.10
• /
• pp.1044-1051
• /
• 2003

In this paper, a compact planar microwave duplexer on the high dielectric substrate is presented. As the Ba(Mg$\sub$1/3/Ta$\sub$2/3/)O$_3$(BMT) has good dielectric performances with a high dielectric constant of $\varepsilon$$\sub$r/=23, it is suitable to apply to a printed circuit board fur reducing its circuit size. The BMT substrate is fabricated by using a tape casting fabrication process, and circuit patterns are screen-printed on it by suing silver paste. The open-loop ring type duplexer is designed and implemented on the BMT substrate, and it achieves the smaller size by 80% than one on a commercial substrate($\varepsilon$$\sub$r/=6.15) without degenerating its performance. Therefore the proposed BMT substrate has provided the miniaturization of the duplexer, moreover it can make a contribution towards reducing the size of microwave passive circuits.

• Journal of IKEEE
• /
• v.24 no.2
• /
• pp.619-625
• /
• 2020

In this paper, we propose a TS-DMOSFET(Trench Shielded DMOSFET) structure in which P+ shielding region is formed in a deeper region than C-DMOSFET(Conventional DMOSFET) and S-DMOSFET(Shielded DMOSFET). Using TCAD simulation to compare the static characteristics of TS-DMOSFET with C- and S-DMOSFET. As for the structure proposed, the doping is followed by the source trench process. Despite the fact that it is a SiC material, this allows it to form a P+ shielding region in a deep area. Followed by completely suppressing the reach-through effect. As a result, when the breakdown voltage of the three structures is 3.3kV, the Ron of TS-DMOSFET is 9.7mΩ㎠. Thus, it is 68% and 54% smaller than the Ron of C-DMOSFET and S-DMOSFET respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.20-25
• /
• 2010

An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

• Proceedings of the KSRS Conference
• /
• 2008.10a
• /
• pp.441-444
• /
• 2008

This paper describes the development of a circularly polarized microstrip antenna, as a part of the Circularly Polarized Synthetic Aperture Radar (CP-SAR) sensor which is currently under developed at the Microwave Remote Sensing Laboratory (MRSL) in Chiba University. CP-SAR is a new type of sensor developed for the purpose of remote sensing. With this sensor, lower-noise data/image will be obtained due to the absence of depolarization problems from propagation encounter in linearly polarized synthetic aperture radar. As well the data/images obtained will be investigated as the Axial Ratio Image (ARI), which is a new data that hopefully will reveal unique various backscattering characteristics. The sensor will be mounted on an Unmanned Aerial Vehicle (UAV) which will be aimed for fundamental research and applications. The microstrip antenna works in the frequency of 1.27 GHz (L-Band). The microstrip antenna utilized the proximity-coupled method of feeding. Initially, the optimization process of the single patch antenna design involving modifying the microstrip line feed to yield a high gain (above 5 dBi) and low return loss (below -10 dB). A minimum of 10 MHz bandwidth is targeted at below 3 dB of Axial Ratio for the circularly polarized antenna. A planar array from the single patch is formed next. Consideration for the array design is the beam radiation pattern in the azimuth and elevation plane which is specified based on the electrical and mechanical constraints of the UAV CP-SAR system. This research will contribute in the field of radar for remote sensing technology. The potential application is for landcover, disaster monitoring, snow cover, and oceanography mapping.

• Korean Journal of Materials Research
• /
• v.12 no.12
• /
• pp.897-903
• /
• 2002

Morphological evolution and growth mechanism at the solid/liquid interface during solidification were investigated in the Ni-base superalloy GTD111M by directional soldification and quenching(DSQ) technique. The experiments were conducted by changing solidification rate(V) and thermal gradient(G) which are major solidification process variables. High thermal gradient condition could be obtained by increasing the furnace temperature and closely attaching the heating and cooling zones in the Bridgeman type furnace. The dendritic/equiaxed transition was found in the G/V value lower than $0.05$\times$10{^3}^{\circ}C$s/$\textrm{mm}^2$, and the planar interface of the MC-${\gamma}$ eutectic was found under $17 $\times$ 10{^3}^{\circ}C$ s/$\textrm{mm}^2$. It was confirmed that the dendrite spacing depended on the cooling rate(GV), and the primary spacing was affected by the thermal gradient more than solidification rate. The dendrite lengths were decreased as increasing the thermal graditne, and the dendrite tip temperature was close to the liquidus temperature at $50 \mu\textrm{m}$/s.