• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1365-1372
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• 2001

In the planar flow casting(PFC) process, the conditions of the melt puddle between nozzle and rotating wheel affect significantly the quality and dimensional uniformity of the downstream ribbon. For stable puddle formation, the nozzle is placed very close to the quenching wheel, so the surface-tension and wall-adhesion forces have an important effect upon the fluid flow.\`In this study the planar flow casting process has been mode]ed using the VOF method for free surface tracking. The transient puddle formation from the present analysis shows good agreements with the previous experimental results. Furthermore, the variation of melt temperature and the corresponding cooling rate of the melt have been examined. The present results also show how the melt puddle can be farmed on the rotating substrate, how the melt flows within the puddle, and how the changes of the process variables affect the puddle formation and its corresponding fluid flow and heat transfer behavior.

• 한국ITS학회:학술대회논문집
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• v.2007 no.10
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• pp.144-148
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.913-914
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• 2009

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.564-566
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• 2012

In this paper, a design method for a compact broadband planar monopole antenna fed by coplanar waveguide (CPW) is studied. The proposed broadband monopole is optimized for terrestrial digital television (DTV) receiving. The monopole is fed by a CPW with 75-ohm characteristic impedance on an FR4 substrate and its size is $100mm{\times}200mm$. A pair of slit is appended for size reduction and an inductive stub is loaded for the impedance matching between the feedline and monopole. The optimized monopole antenna for DTV band (470-806 MHz) is fabricated on an FR4 substrate and tested experimentally to verify the results of this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.61-62
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• 2013

In this paper, a design method for a compact broadband planar dipole antenna fed by a microstrip (MS) line is studied. The proposed broadband dipole is optimized for terrestrial digital television (DTV) receiving. The dipole is fed by an MS line with 75-ohm characteristic impedance on an FR4 substrate and its size is $90mm{\times}180mm$. The dipole is modified to half bow-tie type for size reduction. A simplified balun is adopted for the impedance matching between the MS line and coplanar strip which feeds the dipole. The optimized dipole antenna for DTV band (470-806 MHz) is fabricated on an FR4 substrate and tested experimentally to verify the results of this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.686-689
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• 2013

The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.865-871
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• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.