• 전기학회논문지P
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• 제58권4호
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• pp.609-614
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• 2009

A fuel-cell power system among various alternative power sources has many advantages such as comparatively independable circumstances, high-efficient, and heat-recyclable, thus it is now able to be up to hundreds MWh-scaled through improving feasibility and longevity of it. During the last few decades, numerous research results has been investigated to expand interest in fuel-cell technology. This study presents pressure distribution on the geometrical manifold structures, which are U-type and Z-type, of a planar-type fuel-cell stack by simulated with computational fluid dynamics(CFD). Then, electrical performance of a 200W fuel-cell stack, which is U-type, was diagnosed after pre-conditioning operation. The stack has electrical characteristics ; 22V, 10A, 220W, and current density $200mA/cm^2$.

• ETRI Journal
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• 제28권4호
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• pp.529-532
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• 2006

This letter describes a compact printed helical resonator and its application to a microwave oscillator circuit implemented in coplanar waveguide (CPW) technology. The high quality (Q)-factor and spurious-free characteristic of the resonator contribute to the phase noise reduction and the harmonic suppression of the resulting oscillator circuit, respectively. The designed resonator showed a loaded Q-factor of 180 in a chip area of only 40% of the corresponding miniaturized hairpin resonator without any spurious resonances. The fully planar oscillator incorporated with this resonator showed an additional phase noise reduction of 10.5 dB at a 1 MHz offset and a second harmonic suppression enhancement of 6 dB when compared to those of a conventional CPW oscillator without the planar helical resonator structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.206-209
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• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• Journal of applied mathematics & informatics
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• 제13권1_2호
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• pp.105-115
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• 2003

An infinite locally finite plane graph is called an LV-graph if it is 3-connected and VAP-free. If an LV-graph G contains no unbounded faces, then we say that G is a 3LV-graph. In this paper, a structure theorem for an LV-graph concerning the existence of a sequence of systems of paths exhausting the whole graph is presented. Combining this theorem with the early result of the author, we obtain a necessary and sufficient conditions for an infinite VAP-free planar graph to be a 3LV-graph as well as an LV-graph. These theorems generalize the characterization theorem of Thomassen for infinite triangulations.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.996-1003
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• 1990

We present algebraic algorithms for collision-avoidance robot motion planning problems with planar geometric models. By decomposing the collision-free space into horizontal vertex visibility cells and connecting these cells into a connectivity graph, we represent the global topological structure of collision-free space. Using the C-space obstacle boundaries and this connectivity graph we generate exact (non-heuristic) compliant and gross motion paths of planar curved objects moving with a fixed orientation amidst similar obstacles. The gross motion planning algorithm is further extended (though using approximations) to the case of objects moving with both translational and rotational degrees of freedom by taking slices of the overall orientations into finite segments.

• 전자공학회논문지A
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• 제33A권6호
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• pp.136-143
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• 1996

A simple analytic model for the planar junctions with multiple foating field limiting rings(FLR) is presented which yields analytic expressions for the breakdown voltage and optimum ring spacings. the normalized potential of each ring is derived as a function of the normalized depletion width and the ring spacing. Based on the assumption that the breakdwon occurs simulataneously at cylindrical junctions of FLR structure where the peak sruface electric fields are equal, the optimum ring spacings are determined. The resutls are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI and with the experimental data reported. The normalized experessions allow a calculation of breakdown voltage and optimum spacing over a broad range of junction depth and background doping levels.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• Journal of electromagnetic engineering and science
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• 제6권3호
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• pp.160-164
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• 2006

This paper describes a compact printed helical resonator and its application to a microwave oscillator circuit implemented in coplanar waveguide(CPW) technology. The high Q-factor and spurious-free characteristic of the resonator contribute to the phase noise reduction and the harmonic suppression of the resulting oscillator circuit, respectively. The designed resonator resonating at the frequency of 5.5 GHz showed a loaded Q of 180 in a chip area of only 40 % of the corresponding miniaturized hairpin resonator without any spurious resonances. The fully planar oscillator incorporated with this resonator showed additional phase noise reduction of 10.5 dB at 1 MHz offset and a second harmonic suppression enhancement of 6 dB when compared to those of a conventional CPW oscillator without the planar helical resonator(PHR) structure.

• International Journal of Ocean System Engineering
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• 제2권2호
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• pp.63-70
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• 2012

This paper presents a new curvature based kinematic displacement theory and a numerical method to calculate the planar displacement of structures from a geometrical viewpoint. The theory provides an opportunity to satisfy the kinematic equilibrium of a planar structure using a progressive numerical approach, in which the cross sections are assumed to remain plane, and the deflection curve was evaluated geometrically using the curvature values despite being solved using differential equations. The deflection curve is parameterized with the arc-length, and was taken as an assembly of the chains of circular arcs. Fast and accurate solutions of most complex deflections can be obtained with few inputs.

• Bulletin of the Korean Chemical Society
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• 제2권3호
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• pp.79-82
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• 1981

A calculation method of the dipole moments for square planar and tetrahedral complexes by the valence bond method has been developed and an example calculation was carried out choosing the square planar and tetrahedral $[M(Ⅱ)N_2Se_2]$ type complexes. The calculated values of the dipole moments by the valence bond method are higher than those of the approximate orbital method. We found that we may predict the geometric structure of the transition metal complexes comparing the calculated values of the dipole moments with the experimental values. A new method for definition of C' parameter has also developed on the basis of extended Huckel theory.