• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.43-44
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• Proceedings of the KIEE Conference
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• 2008.10c
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• pp.167-169
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• 2008

A 1.2KW Proton Exchange Membrane Fuel Cell(PEMFC) stack(Nexa Power Module) is installed to motor driven general scooter. The 24V, 650W BLDC motor is used for actuator and 2nd battery(24V, 4Ah) is used for stable starting of this motor. The operating information of Nexa Power Nodule is transmitted by RS-232 serial communication to notebook PC, and that data is analysed and displayed by the LabVIEW monitoring system.

• Bulletin of the Korean Mathematical Society
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• v.33 no.1
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• pp.39-44
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• 1996

Throughout this paper $Z^p, Q_p$ and C_p$ will denote the ring of p-adic rational integers, the field of p-adic rational numbers and the completion of the algebraic closure of $Q_p$, respectively. Let $v_p$ be the normalized exponential valuation of $C_p$ with $$\mid$p$\mid$_p = p^{-v_p (p)} = p^{-1}$. We set $p^* = p$ for any prime p > 2 $p^* = 4 for p = 2$.

• The Pure and Applied Mathematics
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• v.22 no.3
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• pp.285-298
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• 2015

In [41], Th.M. Rassias proved that the norm defined over a real vector space V is induced by an inner product if and only if for a fixed positive integer l holds for all x₁, ⋯ , x_2l ∈ V . For the above equality, we can define the following functional equation Using the fixed point method, we prove the Hyers-Ulam stability of the functional equation (0.1) in fuzzy Banach spaces.

• ETRI Journal
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• v.32 no.3
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• pp.406-413
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• 2010

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1157-1166
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• 2008

Critical surcharge value of silt ground polluted with garbage leachate to the dyes $q_{cr}=3.73c_u$ and ultimate bearing capacity value $q_{ult}=8.60c_u$. Lateral flow pressure at polluted silt ground was about $P_{max}$/3 and depth of maximum lateral flow pressure was found at that of H/3 of soft layer thickness(H). Expression of polluted silt ground of fracture baseline at stability control charge by Matsuo Kawamura is $S_v=3.56\exp\{0.51(Y_m/S_v)\}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.504-505
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.54 no.2
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• pp.101-107
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• 2005

The reduced power quality due to some of disturbances on power system has great influence on the efficient and life of load for bad with serious economic loss. The response of load about disturbance needs to analysis quantitatively in detail to improve load characteristics. In this research, a power supply device is developed to supply disturbed power similar to that of power system. The developed device can output a voltage and frequency from 180[V] to 240[V], 55[Hz] to 65[Hz] respectively. The most outstanding feature of this device is a function to be performed steady and dynamic state characteristic experiment on load or appliances. Also, this device is designed to include high accuracy ouput and simple measurement.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.526-529
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• 2004

A new SEPIC-Flyback convater is proposed. The proposed converter is the superposition of SEPIC and Flyback converter. Not only SEPIC output but also Flyback output could be fully regulated by constant frequency PWM control. Merged SEPIC and Flyback topology could share the transformer and power MOSFET. When the switch turns of one topology operates via capacitive energy transfer. Another topology acts as powering mode while the switch is off. So, it could increase power falsify per one cycle. The operating principle of the proposed converter is described below. Prototype featuring 24V input 48V output, 100kHz switching frequency, and 100W output is simulated under the proposed topology.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.