• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.5
• /
• pp.63-68
• /
• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• Journal of Sensor Science and Technology
• /
• v.20 no.6
• /
• pp.393-399
• /
• 2011

In this paper, we designed and fabricated the novel air flow sensor using air drag force, which can be applied to the low air flow detection. To measure the low air flow, we should enlarge the air drag force and the output signal at the given air flow. The paddle structure is applied to the device, and the device is vertically located against the air flow to magnify the air drag force. We also adapt the corrugation structure to improve the output signals on the given air velocity. The device structure is made up of the silicon nitride layer and the output signal is measured with the piezoresistive layer. The output signals from the corrugated device show the better measurement sensitivity and the response time than that of flat one. The repeated measurement also shows the stabilized signals.

• Journal of Power System Engineering
• /
• v.5 no.4
• /
• pp.11-17
• /
• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.342-344
• /
• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• Proceedings of the KIEE Conference
• /
• 2015.07a
• /
• pp.1229-1230
• /
• 2015

Monitoring of mechanical properties of tissues as well as direction/quantities of forces is considered as an essential way for disease diagnosis and haptic feedback systems. There are extensively increasing interests for measuring normal/shear force and touch feelings, especially for surgery systems. Highly sensitive and flexible tactile sensor is needed in palpation for detecting cancer cyst as well as real time pressure monitoring in minimally invasive surgery (MIS). Importantly, MEMS technique with miniaturized fabrication technique is essential for the on-chip integration with biopsy and biomedical grasper. Here, we propose the flexible tactile sensor with high sensitivity based on piezoresistive effect. We analyzed the sensitivity according to the pressure and directions and showed the ability of discrimination of the different materials surfaces, illustrating the feasibility of the flexible tactile sensor for biomedical grasper by mimicking human skin.

• Journal of Sensor Science and Technology
• /
• v.22 no.5
• /
• pp.321-326
• /
• 2013

In this paper, the usability of a compact silicon strain gauge load cell in a weighting disdrometer for measuring the impact load of a falling raindrop is introduced for application in a multi-meteorological sensor. The silicon strain gauge load cell is based on the piezoresistive effect, which has a high linearity output from the momentum of the raindrop and the simplicity of signal processing. The weighting disdrometer shows a high sensitivity of 7.8 mV/g in static load measurement when the diaphragm thickness of the load cell is $250{\mu}m$.

• Journal of Sensor Science and Technology
• /
• v.8 no.5
• /
• pp.400-406
• /
• 1999

Piezoresistive flow sensors with four different types of microbeam structures were fabricated using (100), n/$n^+$/n three-layer silicon wafer and their characteristics were investigated. Piezoresistors were formed through boron diffusion and its values were about $1\;k{\Omega}$. Three-dimensional silicon microbeams were constructed by porous silicon micromachining and curled microbeams were fabricated by the difference in the thermal expansion coefficient between silicon and metal. The output response of the fabricated sensor was evaluated through half- bridge. The output voltage increased with increasing length of microbeam at the same flow velocity, while the detectable measurement range extended with decreasing length of microbeam. The output voltage of the fabricated sensors were increased with quotient of 3.2 of the flow rate since the stress of the beam versus the gas flow showed non-linear characteristics.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.5
• /
• pp.215-220
• /
• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.171-178
• /
• 1998

Silicon piezoresistive absolute pressure sensor for gas leakage alarm system was developed. This sensor must operate normally in the range of $0{\sim}600\;mmH_{2}O$ pressure, and $0{\sim}100^{\circ}C$ temperature. To make the most of this sensor for gas leakage alarm system, gas must not leak from the sensor itself when the diaphragm of the sensor fractures. Thus, the sealed diaphragm cavity was anodically bonded to pyrex 7740 glass under the condition of $10^{-4}$ torr, at $400^{\circ}C$. The sensitivity of developed sensor was $4.06{\mu}V/VmmH_{2}O$ for $600\;mmH_{2}O$ full-scale pressure range. And temperature compensation method of this sensor is to change bridge-in put-voltage linearly in proportion to the temperature variation by using diode(PXIN4001) or Al thin film resistor. By these methods the temperature effect in the range of $0{\sim}100^{\circ}C$ was compensated over 80 % for offset drift, 95 % for sensitivity.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.1
• /
• pp.35-40
• /
• 2018

Nd:YAG laser was used to carbonize polyimide films to produce carbon films. This is a simple manufacturing process to fabricate low cost sensors. By applying this method, we studied characteristics of flexible and low-cost piezoresistive. Previously, many studies focused on carbonization of polyimide using $CO_2$ laser with wavelength of $10.6{\mu}m$. In this paper, carbonization (carbonization process) was performed on polyimide films using an Nd:YAG laser with a wavelength of $1.064{\mu}m$. In order to increase the resolution, we optimized the laser conditions of the power density ($W/cm^2$) and the beam scan rate. In previous studies using $CO_2$ laser, the minimum line width was $140{\sim}220{\mu}m$ but in this study, carbon line width was reduced to $35{\sim}40{\mu}m$. The initial sheet resistance of the carbon sensor was $100{\sim}300{\Omega}/{\square}$. The resistance decreased by 30% under stretched with a curvature radius of 21 R. The calculated gauge factor was 56.6. This work offers a simple, highly flexible, and low-cost process to fabricate piezoresistive sensors.