• Electrical & Electronic Materials
• /
• v.9 no.6
• /
• pp.551-557
• /
• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.757-760
• /
• 2004

Shaking beam을 이용한 초음파 선형모터는 모터 구동부에서 발생하는 타원궤적이 선형 slider 와 마찰이 되어 선형운동을 발생시킨다. 이러한 초음파 선형모터에서 설계변수는 모터의 효율과 추력(thrust force) 등 동특성을 결정한다. 특히 초음파 모터 동작부의 tip 과 선형 slider 의 contact point와 압착은 모터의 속도, 추력 동작 주파수, 효율에 직접적인 영향을 주는 중요한 parameter 로 작용된다. 본 연구에서는 모터와 선형 slider 의 압착과 contact point둥의 설계변수가 초음파 선형 모터의 성능에 주는 영향을 고찰하였다. 모터으구동부와 선형 slider 사이의 압착력 ($10N{\sim}50N$)과 4가지 곡률을 갖는 tip을 설계변수로 취하였다. Tip 의 형태에 따른 곡률과 모터 구동부와 선형 slider 사이의 압착력 변화에 따른 모터의 동작특성이 변화되는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.324-324
• /
• 2010

최근에는 압전체의 환경오염 문제의 해결 및 가격경쟁력을 갖추기 위해서 비납계 압전체에 대한 연구가 활발히 진행되고 있다. (Na,K)$NbO_3$ 계는 페로브스카이트 구조를 가지는 비납계 세라믹스로 현재 가장 많이 연구되고 있는 물질 중의 하나이다. 본 연구에서는 압전성이 우수한 $(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.9}Ta_{0.04}Sb_{0.06})O_3$ 조성에 CuO, $Cu_2O$ 등의 Cu 산화물을 첨가하였을 때의 전기기계결합계수, 기계적품질계수, 비유전율, 압전전하상수, 문극-전계 이력곡선 (P-E hysteresis curve) 등을 변화를 평가하고자 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.211-211
• /
• 2008

태양열, 바람, 지열, 진동 등의 우리주변에서 쉽게 얻을 수 있는 에너지를 모아서 필요로 하는 전자기기의 에너지원으로 사용하는 개념의 에너지하비스팅에 대한 연구가 활발히 진행되고 있다. 기계적인 변경으로 전압이 발생하는 압전체는 오래전 알려져 있었지만 발생전압이 낮아 에너지발전용으로 적용이 힘들었다. 하지만 전자기기의 소형화와 함께 필요로 하는 전력도 수 ${\mu}W$로 낮아짐으로 압전체를 이용한 에너지하비스팅이 주목 받고 있다. 전선으로 연결하여 전원을 공급하기 힘든 위치에 있는 전자기기는 주기적으로 배터리를 교환해 주어야한다. 이는 시간적, 금전적, 인적자원의 낭비이며 반영구적으로 전원을 공급할 장치개발이 필요하다. 구조물은 수~ 수십 Hz로 진동을 하며 이 진동으로 압전체에 변형을 주어 전압을 발생시킨다. 변형이 클 때 발생전압도 크게 되므로 압전체를 칸틸레버형태로 제작했다. 더 큰 전압발생을 위해 메탈을 사이에 두고 양면에 압전체를 둔 바이몰프 형태로 캔틸레버를 제작했다. 이때 진동의 충격을 완화시켜 압전체에 인가되도록 하고 구조물의 고유진동수모다 큰 진동수로 압전체가 진동하도록 하기위해 스프링을 사용하여 제작하였다. 이 스프링 지지구조 및 가진 조건에 따른 발전특성을 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.42-45
• /
• 1992

In this study, the structural, dielectric and electrical properties of $0.85Pb(Zn_{1/3}Nb_{2/3})O_3-0.1BaTiO_3-0.05PbTiO_3$ ceramics were investigated with respect to the variations of $La_2O_3$ addition amount. The specimen with 0.2 [wt%] $La_2O_3$ addition amount, which has the coupling constants with the value of $k_p$=44.8[%]. $k_{31}$=25.4[%] and the piezoelectric constant with $d_{31}=100{\times}10^{-12}$[C/N] respectively, exhibits the relatively good values in the applications of electrostriction actuators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.3-6
• /
• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.43-49
• /
• 2005

Temperature stabilities of resonance frequencies of the substrates are very important in piezoelectric ceramics oscillators and fitters. In this study, it was investigated thermal resisting property of the length-extensional vibration mode of PZT ceramics. The mode can be utilized in fabricating ultra-small 55 kHz IF devices. We fabricated the ceramic specimens with x = 0.51, 0.52, 0.53, 0.54, and 0.55 in the Pb(Zr$\sub$x/Ti$\sub$1-x/)O$_3$ system. And their resonance frequencies were measured before 1st thermal aging, after 1st and 2nd thermal aging. In order to investigate the influence of thermal aging on thermal resisting properties, thermally aged specimens were once mote thermally aged. Before 1st thermal aging, the specimens of the compositions with morphotropic phase, x = 0.53 and rhombohedral phase, x = 0.54 have weak thermal resisting property of resonance frequency, while tetragonal phase, x = 0.51 has robust thermal resisting property of resonance frequency. 1st thermal aging improved thermal resisting property of resonance frequency in all specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.41-42
• /
• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.248-249
• /
• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.160-163
• /
• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.