• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• The Journal of the Acoustical Society of Korea
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• v.16 no.2
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• pp.89-94
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• 1997

A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.639-646
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• 2022

Energy harvesting technologies that can convert wasted various energy into usable electrical energy have been widely investigated to overcome the limitation of batteries for the powering of IoT sensors and small electronic devices. Hybrid energy harvesting is known as a technology that enhances the output power of single energy harvesting device by housing two or more various energy harvesting mechanisms. In this study, we introduce a hybrid MME (Magneto-Mechano-Electric) generator coupled with the triboelectric effect. Through FEA modeling, four triboelectric materials, including PI (Polyimide), PFA(Teflon), Cu, and Al, were selected and compared with the expected triboelectric potentials. The effect of surface morphology was investigated as well. Among various combination of triboelectric materials and surface morphologies, PFA-Al combination with the surface morphology having nano-scale square projections showed highest output potential under triboelectrification. It is also experimentally confirmed that output voltage and power of the hybrid MME generator with triboelectric material combinations.