• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.49-57
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• 2010

This paper describes the design, construction, and fundamental testing of a precision rotational device that utilizes piezoelectric elements as a source of driving force and impact drive mechanism as a driving principle. A novel device structure is designed and the numerical simulations about the static displacement, stress distribution, and mode shape of the designed structure are performed. A fabricated rotational device has been rotated successfully by applying saw-shaped voltages to the piezoelectric elements. The one-step rotational angle was $0.44{\times}10^{-3}$ rad at the applied voltages of 80V. The angular velocities of the device were revealed to be increased as the driving frequency and voltage were respectively increased and the preload was decreased. The device has a feature that it can be translated as well as rotated. An experimental result shows that the device was translated by ${\pm}4.56{\mu}m$ maximum when the 120V sinusoidal voltages with a phase difference of $180^{\circ}$ were respectively supplied to two piezoelectric elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.105-109
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• 2012

In this study, thickness vibration mode piezoelectric devices for AE sensor application were simulated using ATILA FEM program, and then fabricated. Trajectory resonant displacement and electro mechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electro mechanical coupling factor was obtained when the ratio of diameter/thickness($\Phi/T$) was 0.75. The piezoelectric device of $\Phi/T$=0.75 exhibited the optimum values of fr= 183 kHz, displacement= $4.44{\times}10^{-7}[m]$, $k_{33}$= 0.69, which were suitable for the application of AE sensor piezoelectric device.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.140-147
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• 2008

This paper represents an ultra precision rotational device where the smooth impact drive mechanism (SIDM) is utilized as driving mechanism. Linear motions of piezoelectric elements are converted to the rotational motion of disk by frictional forces generated between the rotational disk and the friction part that is attached to the piezoelectric element. This device was designed to drive the rotational disk using slip-slip motion mechanism instead of stick-slip motion mechanism occurred in conventional impact drive mechanism. Experimental results show that the angular velocity is increased in proportion to the magnitude and frequency of supplied voltage to piezoelectric element and decreased as the preload is increased. In our device, the smooth rotational motion was obtained when the driving frequency has been reached to 500Hz under the driving voltage of 100V.

• Journal of the Korea Institute of Military Science and Technology
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• v.18 no.2
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• pp.139-145
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• 2015

In this paper, the flexible piezoelectric nanocomposite generator(NCG) device based on $BaTiO_3$ nanostructures was fabricated via simple and low-cost spin coating method. The $BaTiO_3$ nanostructures synthesized by self-assembly reaction showed dendrite morphologies. To produce the piezoelectric nanocomposite(p-NC layer) which acts as an electric energy source in NCG device, the piezoelectric nanopowders($BaTiO_3$) were dispersed in polydimethylsiloxane(PDMS). Sequently, the p-NC layer was inserted in two dielectric layer of PDMS; these layers enabled the NCG device flexibility as well as durability prohibiting detachment(exfoliation) for significantly mechanical bending motions. The fabricated NCG device shows average maximum open circuit voltage of 6.2 V and average maximum current signals of 300 nA at 20 wt% composition of $BaTiO_3$ nanostructures in p-NC layer. Finally, the flexible energy harvester generates stable output signals at any rate of frequency which were used to operate LCD device without any external energy supply.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.458-464
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• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2009.04a
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• pp.76-77
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• 2009

This paper is concerned with the development of the piezoelectric energy harvesting(PEH) device using Wind. In this study, the piezoelectric energy harvesting system consisting of a cantilever with a pinwheel and piezoelectric wafer was investigated in detail both theoretically and experimentally. The power output characteristics of the PEH was then calculated and discussed. Theoretical and experimental results showed that the PEH was able to charge a battery with ambient vibrations but still needed an effective mechanism which can convert mechanical energy to electrical energy and an optimal electric circuit which dissipates small energy.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.4
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• pp.151-157
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• 2003

A new type of precision actuator is developed using piezoelectric bimorphs. This type of actuator is applicable for the flat surface or in-pipe system and can make forward and backward motion. Two bimorphs are linked serially and two different phased voltages are applied to each bimorph. Therefore, The end of the bimorph makes ellipsoidal motion. The device moves by the friction force between the rubber attached at the bimorph end and the inner surface of the pipe. As the results, the driving range of the device is about 0~18Hz and the device guarantees very high linearity at low frequency, 0~1 Hz. The maximum velocity of the device is about 6mm/s at 10Hz. The developed mechanism is very simple and use piezoelectric bimorph. So, it is possible to miniaturize and educe the power consumption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.463-467
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• 2011

In this study, thickness shear mode piezoelectric devices for AE sensor with excellent displacement and sensitivity characteristics were simulated using ATILA FEM program, and then fabricated. Displacement and electro mechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electromechanical coupling factor was obtained when the ratio of Length/Thickness was 1. The piezoelectric device of L/T= 1 exhibited the optimum values of fr= 150 kHz, displacement= $6.23{\times}10^{-8}$[m], $k_{15}$= 0.598. The results show that the thickness shear mode piezoelectric device is a promising candidate for the application of AE sensor piezoelectric device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.740-745
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• 2014

ZnO nanowires were grown by hydrothermal synthesis process and piezoelectric poly vinylidene fluoride (PVDF) was then coated on top of the ZnO-nanowires by spray-coating technique. The composite layer of ZnO-nanowires/PVDF was applied to an energy harvesting device based on piezoelectric-conversion mechanism. A defined mechanical force was given to the nanogenerator device to evaluate their electric power generation characteristics, where output current density and voltage were examined. Electric power generation property of the ZnO-nanowires/PVDF based nanogenerator device was compared to that of the nanogenerator device with ZnO-nanowires as single active layer. Effect of the ZnO-nanowires on improvement of power generation was discussed to examine its feasibility for the nanogenerator device.