• Title/Summary/Keyword: Piezoelectric Circuit

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The Fabrication of SAW Filter Using The GaN Piezoelectric Thin Films (GaN 압전박막을 이용한 SAW 필터 제조)

  • 이석헌;정환희;배성범;최현철;이정희;이용현
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.5-8
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    • 2000
  • This paper proposes GaN film as a piezoelectric material for SAW(surface acoustic wave) filters. The fabricated GaN SAW filter exhibited a very high velocity of 5800 ㎧and relatively low insertion loss of -9.9 dB without matching circuit. From Smith's equivalent circuit model, the calculated electromechanical coupling factor (K$^2$) was about 4.$\pm$03%. which is larger than those obtained from other thin film piezoelectric materials and allows the realization of wider filter fractional bandwidths.

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Modeling of Piezoelectric Transformer and CCFL by PSPICE Circuit Analysis (PSPICE 회로해석에 왜한 압전변압기와 CCFL의 모델링)

  • Kim Young-Chun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.3
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    • pp.350-357
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    • 2006
  • In this paper, a PSPICE model of piezoelectric transformer and CCFL using an electrical equivalent circuit was presented. The parameters of CCFL for PSPICE were derived by the least square method. The computer simulations were performed and the results are compared on the PSIPCE model of piezoelectric transformer driven by push-pull inverter and CCFL.

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Electrical Charateristics of Step-down Piezoelectric Transformer

  • Shin Hoonbum;Ahn HyungKeun;Han Deuk-Young
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.47-51
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    • 2001
  • In this paper, we have explained electrical characteristics of a step-down Rosen type piezoelectric transformer for AC-adapter. When the electric voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, then output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer have derived with an equivalent circuit model. With the symbolic expressions, load and frequency characteristics have discussed through simulation. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the various conditions of loads and frequencies. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage has increased and resonant frequency has changed according to various resistor loads. Output current has decreased inversely proportional to changing of loads. Moreover, the measured values of output voltage and current are well agreed with the simulated values of the proposed equivalent circuit model.

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Design of SECE Energy Harvest Interface Circuit with High Voltage Comparator for Smart Sensor (고전압 비교기를 적용한 스마트 센서용 SECE 에너지 하베스트 인터페이스 회로 설계)

  • Seok, In-Cheol;Lee, Kyoung-Ho;Han, Seok-Bung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.3
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    • pp.529-536
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    • 2019
  • In order to apply a piezoelectric energy harvester to a smart sensor system, an energy harvest interface circuit including an AC-DC rectifier is required. In this paper, we compared the performance of full bridge rectifier, which is a typical energy harvester interface circuit, and synchronous piezoelectric energy harvest interface circuit by using board-level simulation. As a result, the output power of a synchronous electric charge extraction(: SECE) circuit is about four times larger than that of the full bridge rectifier, and there is little load variation. And a high voltage comparator, which is essential for the SECE circuit for the piezoelectric energy harvester with an output voltage of 40V or more, was designed using 0.35 um BCD process. The SECE circuit using the designed high-voltage comparator proved that the output power is 427 % higher than the FBR circuit.

Power output and efficiency of a negative capacitance and inductance shunt for structural vibration control under broadband excitation

  • Qureshi, Ehtesham Mustafa;Shen, Xing;Chang, Lulu
    • International Journal of Aeronautical and Space Sciences
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    • v.16 no.2
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    • pp.223-246
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    • 2015
  • Structural vibration control using a piezoelectric shunt is an established control technique. This technique involves connecting a piezoelectric patch, which is bonded onto or embedded into the vibrating structure, to an electric shunt circuit. Thus, vibration energy is converted into electrical energy and is dissipated through a network of electrical components. Different configurations of shunt have been researched, among which the negative capacitance-inductance shunt has gained prominence recently. It is basically an analog, active circuit consisting of operational amplifiers and passive elements to introduce real and imaginary impedance on the vibrating structure. The present study attempts to model the behavior of a negative capacitance-inductance shunt in terms of power output and efficiency using circuit modeling software. The shunt model is validated experimentally and is used to control the structural vibration of an aluminum beam, connected to a pair of piezoelectric patches, under broadband excitation. The model is also used to determine the optimal parameters of a negative capacitance-inductance shunt to increase the efficiency and predict the voltage output limit of op-amp against the supply voltage.

Approximate evaluations and simplified analyses of shear- mode piezoelectric modal effective electromechanical coupling

  • Benjeddou, Ayech
    • Advances in aircraft and spacecraft science
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    • v.2 no.3
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    • pp.275-302
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    • 2015
  • Theoretical and numerical assessments of approximate evaluations and simplified analyses of piezoelectric structures transverse shear modal effective electromechanical coupling coefficient (EMCC) are presented. Therefore, the latter is first introduced theoretically and its approximate evaluations are reviewed; then, three-dimensional (3D) and simplified two-dimensional (2D) plane-strain (PStrain) and plane-stress (PStress) piezoelectric constitutive behaviors of electroded shear piezoceramic patches are derived and corresponding expected short-circuit (SC) and open-circuit (OC) frequencies and resulting EMCC are discussed; next, using a piezoceramic shear sandwich beam cantilever typical benchmark, a 3D finite element (FE) assessment of different evaluation techniques of the shear modal effective EMCC is conducted, including the equipotential (EP) constraints effect; finally, 2D PStrain and PStress FE modal analyses under SC and OC electric conditions, are conducted and corresponding results (SC/OC frequencies and resulting effective EMCC) are compared to 3D ones. It is found that: (i) physical EP constraints reduce drastically the shear modal effective EMCC; (ii) PStress and PStrain results depend strongly on the filling foam stiffness, rendering inadequate the use of popular equivalent single layer models for the transverse shear-mode sandwich configuration; (iii) in contrary to results of piezoelectric shunted damping and energy harvesting popular single-degree-of-freedom-based models, transverse shear modal effective EMCC values are very small in particular for the first mode which is the common target of these applications.

Design of a High-Voltage Piezoelectric Converter for Airbag Ignition Modules

  • Xiao, Hongbing;Du, Yu;Bai, Chunyu;Guo, Zerong;Yen, Kang K.
    • Journal of Power Electronics
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    • v.14 no.1
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    • pp.183-193
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    • 2014
  • Due to the requirements for high reliability and accuracy, safety issues for airbag ignition systems need to be studied. In this paper, a high-voltage piezoelectric converter is designed to improve these requirements in airbag ignition systems. The proposed converter includes an inverter drive circuit, a Rosen piezoelectric transformer (PZT), an output circuit and a feedback control circuit. The key components of the high-voltage piezoelectric transformer are analyzed in detail. In addition, the proposed converter system is simulated and implemented for testing. The experimental results show that when the power supply is turned on, the charging time is less than 800ms. Furthermore, the output voltage of this converter can be kept between 2.9kV and 3.1kV, under high-efficiency constant current charging mode and zero-voltage switching conditions.

The development of piezoelectric smart panels for wide range transmission noise reduction (광대역 전달 소음저감을 위한 지능패널의 개발)

  • Lee, Joong-Kuen;Kim, Jae-Hwan;Cheong, Chae-Cheon;Kang, Young-Kyu
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2000.06a
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    • pp.1273-1279
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    • 2000
  • A new concept of piezoelectric smart panels for noise reduction in wide band frequencies is proposed and their possibility is experimentally investigated. The proposed panels are based on active and passive methods. They use piezoelectric smart structure technology for active noise reduction at low band frequencies and passive sound absorbing materials for mid-range of noise frequencies. To prove the concept of piezoelectric smart panels, an acoustic measurement experiment was performed. The smart panels exhibit a good noise reduction in middle and high frequency ranges due to the mass effects of absorbing materials or/and the air gap. The use of piezoelectric smart panel renders noise reduction large at resonance frequency. Another concept of smart panel that uses piezoelectric damping is experimentally investigated. Since piezoelectric dampings can reduce vibration and noise at resonance frequencies with simple shunt circuit, they have merits in terms of economy and simplicity. Dissipated energy method(DEM) is adopted to tune the shunt circuit precisely in piezoelectric dampings. Noise reduction at multiple resonance frequencies is demonstrated.

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Design of an Integrated High Voltage Pulse Generation circuit for Driving Piezoelectric Printer Heads (피에조일렉트릭 프린터 헤드 구동을 위한 집적화된 고전압 펄스 발생 회로의 설계)

  • Lee, Kyoung-Rok;Kim, Jong-Sun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.2
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    • pp.80-86
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    • 2011
  • This paper presents an integrated variable amplitude high voltage pulse generation circuit with low power and small size for driving industrial piezoelectric printer heads. To solve the problems of large size and power overhead of conventional pulse generators that usually assembled with multiple high-cost discrete ICs on a PCB board, we have designed a new integrated circuit (IC) chip. Since all the functions are integrated on to a single-chip it can achieve low cost and control the high-voltage output pulse with variable amplitudes as well. It can also digitally control the rising and falling times of an output high voltage pulse by using programmable RC time control of the output buffer. The proposed circuit has been designed and simulatedd in a 180[nm] Bipolar-CMOS-DMOS (BCD) technology using HSPICE and Cadence Virtuoso Tools. The proposed single-chip pulse generation circuit is suitable for use in industrial printer heads requiring a variable high voltage driving capability.

Design of Vibration Harvesting Circuit using the MPPT control (MPPT 제어 기능을 갖는 진동에너지 하베스팅 회로 설계)

  • Park, Joon-Ho;Yun, Eun-Jung;Park, Jong-Tae;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.392-395
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    • 2011
  • In this paper, a vibration energy harvesting circuit using the piezoelectric element has been designed. MPPT (maximum power point tracking control) control function has been implemented to deliver the maximum power to the load by using the electric power-voltage characteristic of the piezoelectric element. The designed MPPT circuit traces the maximum power point by sampling periodically the open circuit voltage of the full wave rectifier circuit and delivers the maximum available power to the load. The vibration energy harvesting circuit is designed with $0.18{\mu}m$ CMOS process. The maximum power efficiency is 91%, and the chip area except pads is $1,100{\mu}m{\times}730{\mu}m$.

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