• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.2
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• pp.87-95
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• 2000

By using AIP(Arc Ion Plating) of a physical vapor deposition for the first time in Korea a ceramic tool whose surface is coated single layeredly with TiN is developed. In addition cutting resistance appearing in the process of finishing cut of hardened carbon tool steel STC3 is studied. The principal and radial components of cutting resistance in those cutting conditions appear to be the same or similar and the feed component is relatively small. The feed component is found to be in proportion to cutting width and the radial component in proportion to cutting thickness. Owing to coating the cutting resistance of a TiN coated ceramic tool increas-es compared with that of a general ceramic tool.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.