• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.125-139
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• 2024

As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.133-140
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• 2024

This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.

• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• Vacuum Magazine
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• v.2 no.2
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• pp.4-11
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• 2015

During last two decades, remarkable progresses have been made in organic electronic devices, such as organic light-emitting device, organic photovoltaic and many other applied devices. Many of these progress are attributed to the multilayered/heterojunction device architectures, which could be achieved from the control of "interfacial energetics". In that sense, the interfacial electronic structures in organic electronic devices have a decisive role in device performance. However, the prediction of the interfacial electronic structures from each separate material is not trivial. Many complex phenomena occur at the interface and these can be only understood from thorough measurements on interfacial electronic structures in situ. Photoemission and inverse photoemission spectroscopy have been known as the most proper measurement tools to analyze these interfacial electronic structures. In this review, the basic principles of (inverse) photoemission spectroscopy and typical measurement results on organic/inorganic interfaces are introduced.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.1
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• pp.45-50
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• 2013

The reflector of infrared lamp is designed to the optimal circular shape through the analyses of lumination distributions with a triangular, rectangular and circular configurations of infrared lamps respectively by using Photopia. PLC is used to compare and amplify the difference between soldering temperature profile and feedback value. It is fed to IR lamp controller which adjusts the soldering temperature of PV cell. The soldering temperature measured using an infrared temperature sensor is then fed back to the PLC. The closed control loop of soldering temperature on a PV cell is implemented. The noncontact soldering device of PV cells using infrared lamp which is easily operated by HMI operation panel and controlled robustly by PLC and IR lamp controller is developed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4733-4739
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• 2012

While traditional two-axis tracking systems with double sensors had been using two sensors to control azimuth and elevation angle of the sun so that a solar cell module would make a normal line with the sun, this paper proposed a new two-axis system that can achieve the same performance with only one sensor in it. It is Two-axis tracking system that control azimuth and elevation to control to be reduced for solar cell module as proposed tracking system uses 1 sensors and the sun always forms normal. Two-axis tracking system of one sensor method that propose in paper that could reduce electric power consumption and sees than fixed type preventing action and the most efficient driving and needless drive could confirm that generation efficiency of about 23 [%] increases. To heighten efficiency of solar cell doing to receive more sunlights chasing the sun, done tracking device have proceeded a lot of studies in large size way. Therefore, is expected that will do big part in the sun tracking supply through utility study about persistent generation efficiency constructing monitoring system of the sun tracking of this paper.

• Journal of the Korean Solar Energy Society
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• v.32 no.6
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• pp.113-119
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• 2012

The heat from PV modules should be removed for better electrical performance, and can be converted into useful thermal energy. A photovoltaic-thermal(PVT) module is a combination of PV module with a solar thermal collector which forms one device that produce thermal energy as well as electricity. In many studies various water type PVT collectors have been proposed in effort to increase their electrical and thermal efficiency. The aim of this study is to evaluate the heating performance of heating system combined with PVT collectors that on integrated building roof. For this study, the BIPVT system of 1.5kWp was installed at the experimental house, and it was incorporated with its heating system. From the experimental results, the solar fraction of the heating system with BIPVT was 15%. It was also found that was analyzed that the heating energy for the house can be reduced by 47%, as the heat gained from BIPVT system pre-heated the water used for heating system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.9
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• pp.444-453
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• 2017

This paper proposes an operational algorithm for a Photovoltaic Power-Hardware-In-Loop Simulator that is designed to improve the control algorithm and reliability of the PV Inverter. There was an instability problem in the PV PHILS with the conventional algorithm when it was connected tothe PV inverter. Initially, a real-time based computing unit with mathematical modeling of the PV array is implemented and a DC amplifier and an isolated device for DC power measurement are integrated. Several experiments were performed based on theabove concept undercertain conditions, which showed that the proposed algorithm is more effective for the PV characteristic test and grid evaluation test than the conventional method.

• Journal of the Korea Convergence Society
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• v.2 no.4
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• pp.21-27
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• 2011

Recently, new distributed power sources such as photovoltaic, wind power, fuel cell systems etc. are energetically interconnected and operated in the distribution feeders, as one of the national projects for alternative energy. When new power sources are considered to be interconnected to distribution systems, bi-directional power flow and interconnection conditions of new power sources may cause several power quality problems like voltage sag, voltage swell, harmonics, since new power sources can change typical characteristics of distribution systems. Under these situations, this paper deals with the analysis the power quality problems at primary and secondary feeders in distribution systems, when new power sources like photovoltaic (PV) systems are interconnected, by using the test devices for PV systems based on the LabVIEW S/W. This paper presents the test device which is consisted with model distribution system and model PV systems. By performing the simulation for power quality operation characteristic based on the test facilities, this paper presents the optimal countermeasures for power quality.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.