• Proceedings of the KIPE Conference
• /
• 2003.07b
• /
• pp.953-956
• /
• 2003

Digital environment that is represented to internet is displacing business way of industry and business achievement way with the fast speed being giving great change on life whole, improve existence business process utilizing internet and Web connection technology, information superhighway to tradition industrialist manufacture and e-transformation's propulsion that wish to maximize productivity and administration efficiency Is spread vigorously. In this paper, we wish to accomplish generation equipment's heighten stability and believability through remote monitoring and control of PV system. This paper describes the design of the monitoring system for sensing the monitoring data and indirect controlling of the PV system. Most of the conventional monitoring system depend on the special hardware and software. Basic design goal of monitoring system is to provide the convenience for the user and the portability for the system. In order for the system to fulfill its requirements, it was designed using Labview GUI facility based on the Windows 2000 environment of IBM PC compatible and Add-on card based on the TCP/IP protocol. Advantage of the monitoring system are a personnel expenses curtailment effect, free of the place restriction and unmanned system of the generation plants, etc..

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.70-70
• /
• 2011

The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is beyond a tipping point in the complex worldwide energy outlook. Truly, a revolution in both the technological advancements of solar PV and the deployment of this energy technology is underway; PV is no longer an outlier. The birth of modern photovoltaics (PV) traces only to the mid-1950s, with the Bell Telephone Laboratories' development of an efficient, single-crystal Si solar cell. Since then, Si has dominated the technology and the markets, from space through terrestrial applications. Recently, some significant shift toward technology diversity have taken place. Some focus of this presentation will be directed toward PV R&D and technology advances, with indications of the limitations and relative strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). Recent advances, contributions, industry growth, and technological pathways for transformational now and near-term technologies (Si and primarily thin films) and status and forecasts for next-generation PV (nanotechnologies and non-conventional and "new-physics" approaches) are evaluated. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, ${\ldots}$ and solar hydrogen) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. This presentation provides insights to the reasons for PV technology emergence, how these technologies have to be developed (an appreciation of the history of solar PV)-and where we can expect to be by this mid-21st century.

• Korean Management Science Review
• /
• v.30 no.2
• /
• pp.97-106
• /
• 2013

Of the new and renewable energies currently being pursued domestically, wind energy, together with solar photovoltaic energy, is a new core growth driver industry of Korea. As of May 2012, 33 wind farms at a capacity of 347.8MW are in operation domestically. The purpose of this study was to compare and analyze how efficiently each operational wind farm is utilizing its power generation capacity and the weather resource of wind. For this purpose, the study proceeded in 3 phases. In phase 1, ANOVA analysis was performed for each wind farm, thereby categorizing farms according to capacity, region, generator manufacturer, and quantity of weather resources available and comparing and analyzing the differences among their operating efficiency. In phase 2, for comparative analysis of the operating efficiency of each farm, Data Envelopment Analysis (DEA) was used to calculate the efficiency index of individual farms. In the final phase, phase 3, regression analysis was used to analyze the effects of weather resources and the operating efficiency of the wind farm on the power generation per unit equipment. Results shows that for wind power generation, only a few farms had relatively high levels of operating efficiency, with most having low efficiency. Regression analysis showed that for wind farms, a 1 hour increase in wind speeds of at least 3m/s resulted in an average increase of 0.0000045MWh in power generation per 1MW generator equipment capacity, and a unit increase in the efficiency scale was found to result in approximately 0.20MWh power generation improvement per unit equipment.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.210-211
• /
• 2007

Amid booming PV(photovoltaic) industry, BIPV(Building Integrated PV) is one of the best fascinating PV application technologies. To apply PV in building, variable factors should be reflected such as installation position, shading, temperature effect and so on. Especially a temperature should be considered, for it affects both electrical efficiency of PV module and heating and cooling load in building. Transparent PV modules were designed as finished material for spandrels are presented in this paper. The temperature variation of the modules with and without air gap and insulation were compared and analyzed. The results showed that the module with air gap and insulation has a much larger temperature variation than another transparent module. The temperature of the module reached by 55degree C under vertical irradiance of lower 500$W/m^2$. And the temperature difference between these modules was about 15degree C. To analyze the output performance of module according to temperature variation, separate module was manufactured and measured by sun-simulator. The results showed that 1 degree temperature rise reduced about 0.45% of output power.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.2
• /
• pp.686-694
• /
• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Journal of Surface Science and Engineering
• /
• v.57 no.3
• /
• pp.165-178
• /
• 2024

In semiconductor memory device manufacturing, the capability for high aspect ratio contact (HARC) etching determines the density of memory device. Given that there is no standardized definition of "high" in high aspect ratio, it is crucial to continuously monitor recent technology trends to address technological gaps. Not only semiconductor memory manufacturing companies such as Samsung Electronics, SK Hynix, and Micron but also semiconductor manufacturing equipment companies such as Lam Research, Applied Materials, Tokyo Electron, and SEMES release annual reports on HARC etching technology. Although there is a gap in technological focus between semiconductor mass production environments and various research institutes, the results from these institutes significantly contribute by demonstrating fundamental mechanisms with empirical evidence, often in collaboration with industry researchers. This paper reviews recent studies on HARC etching and the study of dielectric etching in various technologies.

• Environmental and Resource Economics Review
• /
• v.22 no.1
• /
• pp.99-125
• /
• 2013

Renewable energy industry not only has a promising future but also has more risk than conventional energy industry because of its characteristics. Therefore, in this study, an analysis of domestic renewable energy company risk has been performed. The risk of domestic wind and photovoltaic energy companies has been analyzed by using time varying beta model. The model has been constructed based on risk factors like firm size, firm diversification index, domestic installation, and so on. The principal result of analysis can be summarized as follows. First, risk factors affect domestic renewable energy companies have been discovered. Variables like firm size, growth rate of debt ratio, firm diversification index are statistically significant. I found that large firms are less riskier than small firms. It is also confirmed that companies with high diversification index and high debt ratio have high risk. Second, I got the result that policy factors like domestic renewable energy installation and government R&D expenditure could decrease risk of domestic renewable energy company. Third, relative sensitivity of each risk factor have been discovered. The effect of each variable gets bigger in this order: growth rate of domestic installation, firm size or diversification index, growth rate of debt ratio, growth rate of government R&D expenditure.

• Journal of Energy Engineering
• /
• v.25 no.2
• /
• pp.94-100
• /
• 2016

ESS(Energy Storage System) is an important source that keeps power supply stable and utilizes electricity efficiently. For example, ESS contributes to resolve power supply imbalance, stabilize new renewable energy output and regulate frequency. ESS is predicted to be expanded to 55.9GWh of installed capacity by 2023, which is 30 times more than that of 2014. To raise competitiveness of domestic ESS industry in this increasing world market, we have disseminated load-shift ESS for continuous power supply imbalance with FR ESS, and also necessity to secure domestic track record is required. However in case of FR ESS, utility of installing thermal power plant is generally generated within 5% range of rated capacity, so that scalability of domestic market is low without dramatic increase of thermal power plant. Necessity of load-shift ESS dissemination is also decreasing effected by surplus backup power securement policy, raising demand for new dissemination model. New dissemination model is promising for $CO_2$ reduction effect in spite of intermittent output. By stabilizing new renewable energy output in connection with new renewable energy, and regulating system input timing of new renewable energy generation rate, it is prospected model for 'post-2020' regime and energy industry. This research presents a policy alternatives of REC multiplier calculation method to induce investment after outlining PV-connected ESS charge/discharge mode to reduce GHG emission, This alternative is projected to utilize GHG emission reduction methodology for 'Post-2020' regime, big issue of new energy policy.

• Resources Recycling
• /
• v.22 no.3
• /
• pp.28-35
• /
• 2013

The recycling of the Si/SiC mixture sludge obtained from solar cell industry is very significant, environmentally and economically. The sintering characteristics of Si/SiC mixture sludge was studied for the purpose of recycling. In this study, to understand sintering behavior, SiC content in the Si/SiC mixture was controlled using an air separator. Various Si/SiC mixtures having different SiC contents were sintered using carbon black, clay and aluminum hydroxide as sintering aids. Physical properties of Si/SiC mixture and sintered bodies have been characterized using SEM, XRD, particle size analyzer and apparent density measurement. SEM and particle size analysis result confirmed that the fine particles less than 1 ${\mu}m$ decreased or removed more effectively through the air separator in the case of 95% SiC sample compared than the case of 75% SiC sample or original SiC sample. Further, with addition of the Aluminum Hydroxide, ${\beta}$-cristobalite phase gradually decreased while mullite phase gradually increased. The addition of the carbon black improved the sintering characteristics.

• Journal of the Korean Vacuum Society
• /
• v.21 no.1
• /
• pp.29-35
• /
• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.