• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.309-312
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• 1999

Fiber Bragg gratings have many applications such as fiber sensors, band-stop filters, add-drop filters, and mode convertors. In this paper, we present the fabrication method of various fiber Bragg gratings by using continuous wave UV-Argon(frequency-doubled Argon) laser. In our experiments, hydrogenation of fibers was used to enhance photosensitivity of fiber. And we fabricated fiber gratings by the phase mask method.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• Polymer(Korea)
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• v.31 no.5
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• pp.374-378
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• 2007

Water-soluble terpolymer of acrylamide, diacetone acrylamide, and acrylic acid was prepared by redox initiators in aqueous medium. One component photoresist was synthesized by reaction of terpolymer with 4-azidoaniline. By blending the aqueous acrylamide/diacetone acrylamide copolymer solution with bisazide, 4,4'-diazidostilbene -2,2'-disulfuric acid sodium salt, two component photoresist was prepared. The photosensitivity per azido group unit mole of one component photoresist was 4 times higher than that of two component photoresist. The dot-type pattern was successfully achieved with one component photoresist at low exposure energy, which is prospective to be used as black matrix negative photoresist.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.437-471
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• 2002

The photosensitivity enhancement of photoresist achieved by the addition of acid amplifiers stems from the autocatalytic decomposition of the acid amplifiers triggered by acidic species generated from a photoacid gen-erator. In this research we synthesized and evaluated 4-hydroxy-4'-p-styrenesulfonyloxy isopropylidene dicyclohex-ane(1), 4,4'-di-p-styrenesulfonyloxy isopropylidene dicyclohexane(2) and 4-p-styrenesulfonyloxy-4'-tosyloxy isopropylidene dicyclohexane(3) as novel acid amplifiers. These acid amplifiers(1-3) showed reasonable thermal stability for resist pro-cessing temperature. As estimated by the sensitivity curve, 1-3 were 2X-12X sensitive than poly(tert-butyl meth-acrylate) film in the presence of a photoacid generator and, therefore, provides practical applicability for photoimaging.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.51 no.1
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• pp.41-47
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• 2006

To understand the heading habit of recently developed 20 Korean rice cultivars, rice plants in a phytotron were exposed to different temperature: $22.5^{\circ}C(day\;27^{\circ}C/night\;18^{\circ}C),\;27.5^{\circ}C(day\;32^{\circ}C/night\;23^{\circ}C)$, and day-length conditions: 10, 12, 13, 14, 15 hours. Four rice cultivars (Sobibyeo, Juanbyeo, Ilpumbyeo and Shindongjinbyeo) showed relatively short Basic Vegetative Phase (BVP) of 17 to 18 days, while Dasanbyeo showed the longest (35 days) BVP, compared to other remaining 15 tested cultivars which exhibited 24 to 31 days of BVP. In this experiment, it was tried out to separate the eliminable vegetative phase into photosensitivity and thermo-sensitivity with two different pathways. Many tested cultivars, however, exhibited quite different responses under low temperature and / or long day-length conditions. Especially, Surabyeo and Juanbyeo were the most difficult cultivars to separate into photo- or thermo-sensitivity in that the eliminable vegetative phase of these two cultivars increased greatly only under low temperature $(22.5^{\circ}C)$ and long day-length (15 hr.) conditions. Regarding the heading response to temperatures, tested cultivars could be categorized into 2 groups. In 1st group of rice cultivars, the eliminable vegetative phase decreased almost equally as the temperature changed from $20.0^{\circ}C\rightarrow22.5^{\circ}C\rightarrow25.0^{\circ}C\rightarrow27.5^{\circ}C$. In contrast, the 2nd group of rice cultivars exhibited eliminable vegetative phase slowly decreasing when the temperature changed from $22.5^{\circ}C\rightarrow25.0^{\circ}C\rightarrow27.5^{\circ}C$, but rapidly decreasing when the mean temperature changed from $20.0^{\circ}C\;to\;22.5^{\circ}C$. All the cultivars belonged to 2nd group, the heading date would be very delayed if cool summer comes.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.178-181
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• 2001

The electro-optical (EO) characteristics for the twisted-nematic (TN)-liquid crystal display (LCD) photo-aligned with polarized UV exposure on various blending photopolymer surfaces were investigated. Excellent LC alignment and voltage-transmittance (V-T) characteristics for TN-LCD photo-aligned with polarized UV exposure of normal incidence on the blending Photopolymer (polyimide (PI) + PM4Ch (poly(4-methacryloyloxy chalcone))) surface containing chalcone group can be achieved. The EO performances of the TN-LCD photo-aligned on the blending photopolymer can be improved due to the photosensitivity by long side chain of the photopolymer.

• Bulletin of the Korean Chemical Society
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• v.24 no.4
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• pp.441-445
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• 2003

We synthesized three copolymers bearing photochromic spiropyran dye and chalcone moiety in the side chain for studying the dynamic properties of their photochromism. They contain methacrylate-spiropyran (MAspiropyran) and methacrylate-chalcone (MA-chalcone) with the different concentration. The photosensitivity of the newly synthesized copolymers was investigated by using UV-Vis absorption spectroscopy. We observed photodimerization and photochromic behavior under UV irradiation at the same time. The effect of photocrosslink on the rate and stability of photochromism in three copolymers was considered in this study. This study might be helpful to design photochromic materials for irreversible optical memory by virtue of photocrosslinking reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.40-41
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• 2002

광 집적회로의 필요성에 의해 평면형 광소자의 개발이 다각도로 연구되고 있다. 그 중 유리의 광민감성을 이용한 것으로 직접 UV를 조사하여 광도파로를 만드는 방법이 최근 관심을 얻고 있다. 이러한 direct UV-writing 방법을 이용한 경우는 광도과로를 위한 식각 과정을 거치지 않고도 광도파로를 제작할 수 있는 장점이 있다. UV-writing을 이용한 광도파로 형성을 위해서는 undercladding층, core층, overcladding층으로 이루어진 구조의 박막을 제조해야 하며, 특히 빛이 도파되는 core 부분은 UV 조사에 따라 굴절률이 증가하는 광민감성이 높은 물질로 구성되어야 한다. UV조사에 따라 굴절률이 증가하는 광민감성이 높은 물질로 구성되어야 한다. (중략)