• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.5-9
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• 2013

We report on high-power continuous-wave operations of an Er:YAG ceramic laser in-band pumped by a cladding-pumped Er,Yb fiber laser at 1532 nm. With an output coupler of 10% transmission, the ceramic laser yielded 16.7 W of continuous-wave output at 1645 nm for 28.8 W of incident pump power, corresponding to a slope efficiency of 61.0% with respect to the incident pump power. The lasing wavelength switched to 1617 nm when output couplers of > 20% transmission were used. Up to 16.2 W of 1617 nm output was generated for 33.0 W of incident pump power, corresponding to a slope efficiency of 51.8%. Graphene Q-switched operation of Er:YAG cermic laser at 1645 nm was also demonstrated with stable pulses of 30-74 kHz repetition rates and 1.5-6.4 ${\mu}s$ pulse widths.

• ETRI Journal
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• v.45 no.1
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.5C
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• pp.496-499
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• 2002

In this paper, a phase shifter with shifting photonic bandgap(PBG) cell in linear feedforward amplifier is designed and fabricated in 5GHz wireless LAN band. Now a day, the phase shifter has been fabricated with hybrid type. In this paper, a portion of PBG cell is shifted for the tuning phase. The phase shift was achieved maximum 80o in our PBG structure. Shifting PBG cell has been applied in feedforward main loop to cancel the main two tone signal.

• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.207-210
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• 2009

Multiple rugate structures can be etched on a silicon wafer and placed in the same physical location, showing that many sharp spectral lines can be obtained in the optical reflectivity spectrum. Porous silicon samples were prepared by electrochemical etch of heavily doped p-type silicon wafers. The etching solution consisted of a 3:1 volume mixture of aqueous 48% hydrofluoric acid and absolute ethanol. Galvanostatic etch was carried out in a Teflon cell by using a two-electrode configuration with a Pt mesh counterelectrode. A sinusoidal current density waveform varying between 51.5 and $74.6mA/cm^2$ is applied. The anodization current was supplied by a Keithley 2420 high-precision constant current source which is controlled by a computer to allow the formation of PSi multilayer.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Current Optics and Photonics
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• v.2 no.6
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• pp.519-524
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• 2018

We propose a transverse load sensor with reconfigurable measurement accuracy based on a microwave photonic filter in the $K_u$ band, incorporating a polarization-maintaining fiber Bragg grating. A prototype sensor with a reconfigurable measurement accuracy tuning range from 6.09 to 9.56 GHz/(N/mm), and corresponding minimal detectable load range from 0.0167 to 0.0263 N/mm, is experimentally demonstrated. The results illustrate that up to 40% manufacturing error in the grating length can be dynamically calibrated to the same corresponding measurement accuracy for the proposed transverse load sensor, by controlling the semiconductor optical amplifier's injection current in the range of 154 to 419 mA.

• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.6
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• pp.610-618
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• 2021

In this paper, a photonic-based microwave system technology is described, and a traveling-wave electro-optic modulator is designed and manufactured as a key component. The fabricated modulator is composed of a metal diffusion waveguide for optical transmission and a planar waveguide electrode on lithium niobate substrate for microwave transmission. The electro-optic response bandwidth of I and Q channels in a fabricated dual parallel Mach-Zehnder modulator were measured for 27.67 and 28.11 GHz, respectively. Photonic four times up-converted X-band frequency and linear frequency modulated signal were confirmed using the fabricated electro-optic modulator by S-band input signal. The confirmed broadband signal can be applied to a microwave system for surveillance and high-resolution ISAR imaging.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.69-72
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• 2004

A bandpass filter has been designed by employing the PBG structure and the aperture on the ground together in this paper. The harmonics of band pass filter have been suppressed by employing the PBG structure and the bandwidth of it has been broadened by using the aperture on the ground. The three kinds of PBG structures has been combined to suppress the harmonics of the filter The center frequency of filter is 2.2 GHz and the bandwidth has been increased from $40\%$ by the aperture and all harmonics were suppressed about 35dBc by the PBG. The insertion loss has been reduced 3.0dB to 2.6dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1071-1077
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• 2002

In this paper, we have studied the dependence of insertion loss of the pressed microstrip PBG ring consisting of coupled two microstrip lines. When the distance decreases, two or three attenuation poles are created by the coupling between the lines. Thus the pressed PBG ring exhibits a wide stop band and sharp cutoff characteristics.