• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.441-447
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• 2014

$AgI/AgCl/H_2WO_4$ double heterojunctions photocatalyst was prepared via deposition-precipitation followed by ion exchange method. The structure, crystallinity, morphology, chemical content and other physical-chemical properties of the samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectra (EDX), UV-vis diffuse reflectance spectroscopy (DRS), and photoluminescence (PL). The photocatalytic activity of the $AgI/AgCl/H_2WO_4$ was evaluated by degrading methyl orange (MO) under visible light irradiation (${\lambda}$ > 400 nm). The double heterojunctions photocatalyst displayed more efficient photocatalytic activity than pure AgI, AgCl, $H_2WO_4$ and AgCl/$H_2WO_4$. Based on the reactive species and energy band structure, the enhanced photocatalytic activity mechanism of $AgI/AgCl/H_2WO_4$ was discussed in detail. The improved photocatalytic performance of $AgI/AgCl/H_2WO_4$ double heterojunctions could be ascribed to the enhanced interfacial charge transfer and the inhibited recombination of electron-hole pairs, which was in close relation with the $AgI/AgCl/H_2WO_4$ heterojunctions formed between AgI, AgCl and $H_2WO_4$.

• Journal of the Korean Chemical Society
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• v.51 no.6
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• pp.513-519
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• 2007

A vesicle forming polymer, poly(sodium acrylamidoundecanoate) (PSAU) and a water-soluble distyrylbenzene- based fluorophore, TPADSB-C were synthesized and characterized by using UV-vis and photoluminescence (PL) spectroscopy. An inter-chain vesicle formation of PSAU was observed at ~0.01 g/L from N-phenyl naphthylamine fluorescence measurement with changing PSAU concentration in water. Above critical aggregation concentration of PSAU, optical properties of TPADSB-C were investigated to study the microenvironment modulation through dye incorporation in the polymeric vesicle. The emission of TPADSB-C in the presence of PSAU vesicles was blue-shifted and the PL quantum efficiency was increased to 90% due to the microenvironment (e.g. polarity) change in aqueous solution. This study shows that the polymeric vesicle containing molecular fluorophores has a great potential as an efficient, stable and biocompatible labeling tag in biological cell imaging.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1181-1187
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• 2013

Water-dispersible ZnS:Mn nanocrystals were synthesized by capping the surface of the nanocrystal with O-(2-Aminoethyl)polyethylene glycol (PEG-$NH_2$, Mw = 10,000 g/mol) and O-(2-Carboxyethyl)polyethylene glycol (PEG-COOH, Mw = 10,000 g/mol) molecules. The modified PEG capped ZnS:Mn nanocrystal powders were thoroughly characterized by XRD, HR-TEM, EDXS, ICP-AES and FT-IR spectroscopy. The optical properties were also measured by UV/Vis and photoluminescence (PL) spectroscopies. The PL spectra showed broad emission peaks at 600 nm with similar PL efficiencies of 7.68% (ZnS:Mn-PEG-NH2) and 9.18% (ZnS:Mn-PEG-COOH) respectively. The measured average particle sizes for the modified PEG capped ZnS:Mn nanocrystals by HR-TEM images were 5.6 nm (ZnS:Mn-PEG-NH2) and 6.4 nm (ZnS:Mn-PEG-COOH), which were also supported by Debye-Scherrer calculations. In addition, biological toxicity effects of the nanocrystals over the growth of wild type E. coli were investigated. They showed no biological toxicity to E. coli until very high concentration dosage of 1 mg/mL of the both nanocrystal samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.636-636
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• 2013

Since first discovery of strong Raman spectrum of molecules adsorbed on rough noble metal, surface enhanced Raman scattering (SERS) has been widely used for detection of molecules with low concentration. Surface plasmons at noble metal can enhance Raman spectrum and using Au nanostructures as substrates of SERS has advantages due to it has chemical stability and biocompatibility. However, the photoluminescence (PL) background from Au remains a problem because of obtaining molecular vibration information. Recently, graphene, two-dimensional atomic layer of carbon atoms, is also well known as PL quenchers for electronic and vibrational excitation. In this study, we observed SERS of single layer graphene on or under monolayer of Au nanoparticles (NPs). Single layer graphene is grown by chemical vapor deposition and transferred onto or under the monolayer of Au NPs by using PMMA transfer method. Monolayer of Au NPs prepared using Langmuir-Blodgett method on or under graphene surface provides closed and well-packed monolayer of Au NPs. Scanning electron microscopy (SEM) and Raman spectroscopy (WItec, 532 nm) were performed in order to confirm effects of Au NPs on enhanced Raman spectrum. Highly enhanced Raman signal of graphene by Au NPs were observed due to many hot-spots at gap of closed well-packed Au NPs. The results showed that single layer graphene provides larger SERS effects compared to multilayer graphene and the enhancement of the G band was larger than that of 2D band. Moreover, we confirm the appearance of D band in this study that is not clear in normal Raman spectrum. In our study, D band appearance is ascribed to the SERS effect resulted from defects induced graphene on Au NPs. Monolayer film of Au NPs under the graphene provided more highly enhanced graphene Raman signal compared to that on the graphene. The Au NPs-graphene SERS substrate can be possibly applied to biochemical sensing applications requiring highly sensitive and selective assays.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.53-54
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• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.605-611
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• 2014

$SrGd_{2-x}(MoO_4)_4:Er^{3+}/Yb^3$ phosphors with doping concentrations of $Er^{3+}$+ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) were successfully synthesized by the cyclic microwave-modified sol-gel method, and their upconversion mechanism and spectroscopic properties have been investigated in detail. Well-crystallized particles showed a fine and homogeneous morphology with grain sizes of $2-5{\mu}m$. Under excitation at 980 nm, $SrGd_{1.7}(MoO_4)_4:Er_{0.1}Yb_{0.2}$ and $SrGd_{1.5}(MoO_4)_4:Er_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band, a weak 550-nm emission band in the green region, and a very weak 655-nm emission band in the red region. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 1023, 1092, and $1325cm^{-1}$ and at lower frequencies of 223, 2932, 365, 428, 538, and $594cm^{-1}$ induced by the incorporation of the $Er^{3+}$+ and $Yb^{3+}$+ elements into the $Gd^{3+}$ site in the crystal lattice, which resulted in the unit cell shrinkage accompanying a new phase formation of the $[MoO_4]^{2-}$ groups.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.158-158
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• 2010

본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.