• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.755-759
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• 2005

This study was based on organic electroluminescence display. Especially, DPAVBi, AVBi and DPVBi for the emitting materials were synthesized by Wittig, Wittig-Horner reaction. This reaction was conducted between phosphorous ylide and 4-(diphenylamino)benzaldehyde, 9-anthraldehyde and benzophenone. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectvely. The photoluminescence spectra of a pure DPAVBi, AVBi and DPVBi were observed at approximately 445nm, 484nm and 450nm, respectively. In this study, it was known that DPAVBi, AVBi, DPVBi had a different reaction properties according to stability of ${\alpha}$-position carbonyl group of the aldehyde, ketone.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.241-242
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• 2012

산화아연 씨앗층을 졸-겔 스핀코팅법으로 석영기판위에 증착시킨 후, 수열합성법을 이용하여 갈륨의 양을 0에서 2.0 at.% 으로 변화를 주어 갈륨이 도핑된 산화아연 나노막대를 성장하였다. 산화아연과 갈륨이 도핑된 산화아연 나노막대의 구조적 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible spectroscopy를 이용하였다. 일정한 산화아연과 갈륨이 도핑된 산화아연 나노막대는 육각형형태로 성장하였다. XRD 데이터로부터, 산화아연과 갈륨이 도핑된 산화아연 나노막대의 스트레스는 각각 -0.022 (0 at.%), 0.097 (0.5 at.%), 0.165 (1.0 at.%), 0.177 (1.5 at.%), 0.182 GPa (2.0 at.%) 였다. PL 스펙트라에서 얻어진 반가폭(The full width at half maximum)은 갈륨의 양이 0에서 2.0 at.%로 증가함에 따라 127에서 171 meV로 증가하였다. Urbach 에너지는 68 (0 at.%), 97 (0.5 at.%), 108 (1.0 at.%), 104 (1.5 at.%), 127 meV (2.0 at.%)였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.245-246
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• 2012

Al 농도를 0 부터 2 at.% 까지 조절하여 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막을 석영 기판 위에 성장하였다. Al 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. 광학적 밴드갭은 Al 도핑 농도가 증가함에 따라 2.874 (0 at.%), 2.874 (0.5 at.%), 3.029 (1.0 at.%), 3.038 (1.5 at.%), 3.081 eV (2.0 at.%)로 증가하였다. Urbach energy는 도핑 농도에 따라 각각 464 (0 at.%), 585 (0.5 at.%), 571 (1.0 at.%), 600 (1.5 at.%), 470 meV (2.0 at.%)이었다. 또한, Al 농도가 증가함에 따라 $Cd_{0.5}Zn_{0.5}O$ 박막의 표면, 구조적 및 광학적 특성이 크게 변화되었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.236-237
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• 2012

ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.

• Current Applied Physics
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• v.18 no.11
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• pp.1225-1229
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• 2018

In this paper, we investigated the electronic structures and defect states of $SrLaMgTaO_6$ (SLMTO) double perovskite structures by using resonant inelastic x-ray scattering. Recently, $Eu^{3+}$ doped SLMTO red phosphors have been vigorously investigated due to their higher red emission efficiency compared to commercial white light emitting diodes (W-LED). However, a comprehensive understanding on the electronic structures and defect states of host SLMTO compounds, which are specifically related to the W-LED and photoluminescence (PL), is far from complete. Here, we found that the PL spectra of SLMTO powder compounds sintered at a higher temperature, $1400^{\circ}C$, were weaker in the blue emission regions (at around 400 nm) and became enhanced in near infrared (NIR) regions compared to those sintered at $1200^{\circ}C$. To elucidate the difference of the PL spectra, we performed resonant inelastic x-ray spectroscopy (RIXS) at Ta L-edge. Our RIXS result implies that the microscopic origin of different PL spectra is not relevant to the Ta-related defects and oxygen vacancies.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.286-291
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• 2023

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Journal of the Korean Chemical Society
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• v.53 no.6
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• pp.677-682
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• 2009

ZnS:Mn/ZnS core-shell quantum dots (QDs), were synthesized via a thermal decomposition reaction of organometallic precursors in a hot solvent mixture. The synthetic conditions of the quantum dots were monitored at various reaction temperatures for the core formation, while the shell formation temperature was fixed at 135$^{\circ}C$. The obtained colloidal nanocrystals at corresponding temperatures were characterized by UV-Vis, solution photoluminescence (PL) spectroscopies, and further obtained powders were characterized by XRD, HR-TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the core-shell QD was 135$^{\circ}C$, for both core and shell formation. At this temperature, solution PL spectrum showed a narrow emission peak at 583 nm with a relative PL quantum efficiency of 42.15%. In addition, the measured spherical particle sizes for the ZnS:Mn/ZnS nanocrystals via HR-TEM were in the range of 4.0 to 5.4 nm, while ellipsoidal particles were obtained at 150$^{\circ}C$.