• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.592-594
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• 2004

We have investigated the photolithographic patterning method of light emitting polymer film for polymer light emitting diodes (PLEDs). Blue light emitting polymers based on polyfluorene, which can be cured photochemically to yield an insoluble form, have been synthesized using Ni(0) mediated Yamamoto polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope analysis, UV/visible spectroscopy, and photoluminescence. We have successfully fabricated PLEDs composed of the patterned emissive layer and their electroluminescence property has been also investigated. In this presentation, the detailed photolithographic patterning method and its application for polymer light emitting display will be discussed.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.178-178
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• 2013

고체내의 결함을 분석하기 위한 장비로는 대표적으로 DLTS (deep level transient spectroscopy)를 이용하여 깊은 준위 결함의 활성화에너지를 구하는 분석법, 투과전자현미경을 이용한 박막의 결정살창 분석법, photoluminescence나 electroluminescence를 이용하여 광학적인 방법으로 결함을 분석하는 방법, 마지막으로 광전류 측정을 통하여 결함을 분석하는 방법 등이 있다. 이 중에서도 빛에 의해서 증가되는 광전류를 이용한 결함 분석 방법은 과거에는 종종 시행되어 왔으나 최근에는 거의 연구되어지고 있지 않고 있다. 고체 내의 많은 결함들이 빛에만 반응하는 결함도 있으며 전기적인 측정을 통해서만 발견되는 결함이 존재하기 때문에 모든 부분을 다 만족시키는 방법은 찾기가 힘들다고 알려져 있다. 한편, ZnO는 octahedral 구조로 공간이 비어있기 때문에 여러 가지 결함이 존재하는데, 그 중에서 valence band 바로 위 0.3~0.5 eV에 존재하는 결함 준위는 Zn 빈자리에 의한 결함으로 이론적으로만 밝혀졌을 뿐 실험적으로는 현재까지 발견되어지고 있지 않다. 본 연구에서는 광전류를 이용하여 n-ZnO/p-Si과 n-ZnO/p-GaN p-n 접합 다이오드 내의 결함에 대한 연구를 진행하였다. ZnO를 UHV 스퍼터링 방법으로 성장하였으며 ZnO의 결함의 양을 조절하기 위해 박막의 두께와 증착할 때의 기판 속도 등을 조절하였다. 이렇게 성장된 ZnO 기반의 다이오드를 광전류 측정을 이용하여 결함을 분석하였다. 실험결과 420 nm 파장의 빛을 다이오드에 주사하였을 때 광전류가 크게 증가하는 것을 확인하였으며 이것은 이론적으로만 주장되어져 왔던 Zn 빈자리 결함에 의한 것으로 판단되었다.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.189-194
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• 2005

[ $SiO_2$ ] nanowires were synthesized using the catalyst evaporation method. Grown nanowires had different shapes by kind of used metal catalyst. Mean diameters of grown $SiO_2$ nanowire were about 30 nm. The kind of catalysts affected microstructure of grown $SiO_2$ nanowire because of its typical growth reactions through the liquid state metal catalysts. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 nm.

• Bulletin of the Korean Chemical Society
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• v.28 no.7
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• pp.1091-1096
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• 2007

Water dispersible ZnS:Mn nanocrystals were synthesized by capping the surface of the nanocrystals with four kinds of aminoacids ligands: arginine, cystein, histidine, and methionine. The aminoacids capped ZnS:Mn nanocrystal powders were characterized by XRD, HR-TEM, EDXS, and FT-IR spectroscopy. The optical properties of the aminoacids capped ZnS:Mn colloidal nanocrystals were also measured by UV/Vis and solution photoluminescence (PL) spectroscopies in aqueous solvents. The solution PL spectra showed broad emission peaks around 575 nm (orange light emissions) with PL efficiencies in the range of 4.4 to 7.1%. The measured particle sizes for the aminoacid capped ZnS:Mn nanocrystals by HR-TEM images were in the range of 5.3 to 11.7 nm.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3671-3676
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• 2013

A series of carbon nanotube, $C_{60}$, and graphene modified $TiO_2$ nanocomposites were prepared by hydrothermal method. X-ray diffraction, $N_2$ adsorption, UV-Vis spectroscopy, photoluminescence, and Electrochemical impedance spectra were used to characterize the prepared composite materials The results reveal that incorporating $TiO_2$ with carbon materials can extend the adsorption edge of all the $TiO_2$-carbon nanocomposites to the visible light region. The photocatalytic activities were tested in the degradation of 2,4,6-trichlorophenol (TCP) under visible light. No obvious difference in essence was observed in structural and optical properties among three series of carbon modified $TiO_2$ nanocomposites. Three series of carbon materials modified $TiO_2$ composites follow the analogous tentative reaction mechanism for TCP degradation. GR modified $TiO_2$ nanocomposite exhibits the strongest interaction and the most effective interfacial charge transfer among three carbon materials, thus shows the highest electron-hole separation rate, leading to the highest photocatalytic activity and stability.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.66-71
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• 2015

$NaY_{1-x}(WO_4)_2:Ho^{3+}/Yb^{3+}$ phosphors with doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) were successfully synthesized via the cyclic microwave-modified sol-gel route; their upconversion properties were investigated. Well-crystallized particles showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, the synthesized particles exhibited yellow emissions based on a strong 550-nm emission band in the green region and a very strong 655-nm emission band in the red region. The Raman spectra of the doped particles indicated the domination of strong peaks at higher and lower frequencies induced by the incorporation of the $Ho^{3+}$ and $Yb^{3+}$ elements into the $Y^{3+}$ sites in the crystal lattice, which resulted in unit cell shrinkage that accompanied a new phase formation of the $WO_{4-x}$ group.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.106-108
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• 2004

We have investigated the photolithographic patterning method of light emitting polymer film for polymer light emitting diodes (PLED). Blue light emitting polymers based on polyfluorene, which can be cured photochemically to yield an insoluble form, have been synthesized using Ni(0) mediated Yamamoto polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope analysis, UV/visible spectroscopy, and photoluminescence. We have successfully fabricated PLEDs composed of the patterned emissive layer and their electroluminescence property has been also investigated. In this presentation, the detailed photolithographic patterning method and its application for polymer light emitting display will be discussed.