• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.376.1-376.1
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• 2014

그래핀은 차세대 2차원 물질로서 지금까지 활발히 연구되어 왔으나 밴드갭이 없기 때문에 전자소자로서의 응용이 매우 제한적이다. 최근에 그래핀을 대체할 수 있는 물질로서 Transition Metal Dichalcogenides (TMDs)가 주목을 받고 있다. 특히, TMDs 중에서 $MoS_2$는 bulk일 때 indirect한 1.2 eV인 밴드 갭을 갖고 있으나, layer가 줄어들면서 direct한 1.8 eV인 밴드갭을 가진다. 국내외 여러 연구 그룹에서 $MoS_2$를 이용하여 제작한 Field Effect Transistor (FET)는 high-$\small{K}$ gate가 산입되지 않은 경우에 on-off ratio와 mobility가 각각 $10^6$와 약 $3cm^2/Vs$로 나타나고 있다. 이와 같이 아주 우수한 전기적, 광학적 특성을 갖는 소자 응용성을 가지고 있다. 최근까지의 연구결과들은 대부분 mechanical exfoliation method (MEM) 로 제작된 $MoS_2$ monolayer를 이용하였으나, 이 방법은 large scale 및 layer controllable에는 적합하지 않다. 본 연구에서는 대면적의 집적회로 응용에 적합한 chemical vapor deposition법을 이용하여 $MoS_2$를 성장하였다. 높은 결정성을 위해 sulphur (powder purity 99.99%)와 molybdenum trioxide(powder purity 99.9%)를 이용하고, Ar 가스 분위기에서 sulphur powder 및 molybdenum trioxide powder를 각각 $130^{\circ}C$ 및 $1000^{\circ}C$로 유지하며 $MoS_2$ 박막을 성장하였다. 성장된 $MoS_2$ 박막은 Atomic force Microscopy (AFM)을 통해 박막의 단차와 roughness을 확인하였다. 또한, X-ray Diffraction (XRD) pattern 분석으로 박막의 결정성을 확인하였으며, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Photoluminescence (PL) 측정으로 광학적 특성을 분석하였다.

• Journal of Powder Materials
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• v.27 no.3
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• pp.233-240
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• 2020

Nano-sized ZnSe particles are successfully synthesized in an aqueous solution at room temperature using sodium borohydride (NaBH₄) and thioglycolic acid (TGA) as the reducing agent and stabilizer, respectively. The effects of the mass ratio of the reducing agent to Se, stabilizer concentration, and stirring time on the synthesis of the ZnSe nanoparticles are evaluated. The light absorption/emission properties of the synthesized nanoparticles are characterized using ultraviolet-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and particle size analyzer (PSA) techniques. At least one mass ratio (NaBH4/Se) of the reducing agent should be added to produce ZnSe nanoparticles finer than 10 nm and to absorb UV-vis light shorter than the ZnSe bulk absorption wavelength of 460 nm. As the ratio of the reducing agent increases, the absorption wavelengths in the UV-vis curves are blue-shifted. Stirring in the atmosphere acts as a deterrent to the reduction reaction and formation of nanoparticles, but if not stirred in the atmosphere, the result is on par with synthesis in a nitrogen atmosphere. The stabilizer, TGA, has an impact on the Zn precursor synthesis. The fabricated nanoparticles exhibit excellent photo-absorption/discharge characteristics, suggesting that ZnSe nanoparticles can be alloyed without the need for organic solutions or high-temperature environments.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1414-1420
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• 2013

Five novel spiro[benzo[c]fluorene-7,9'-fluorene] based dyes, including 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-5-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (7), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (8), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (9), 9-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (10), and 2'-[spiro[benzo[c]-fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (11) were successfully prepared from the corresponding halogen and boronic acid derivatives through the Suzuki coupling reaction, respectively. Chemical structures were confirmed by $^1H$ nuclear magnetic resonance (NMR), $^{13}C$ NMR, Fourier transforminfrared spectrscopy, mass spectroscopy, and elemental analysis. The thermal properties were determined by differential scanning calorimetry and thermal gravimetric analysis. The relationships between the optical and electrochemical properties and the combined positions between these dimers were systematically investigated using UV-vis, photoluminescence (PL), and photoelectron spectroscopy. These five dimers exhibited high fluorescent quantum yields and good morphological stability with high glass transition states > $174^{\circ}C$. Dimer 7 showed a UV absorbance peak at 353 nm, emission PL peak at 424 nm, and quantum efficiency of 0.62 in a cyclohexane solution.

• Journal of the Korean Chemical Society
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• v.57 no.5
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• pp.547-553
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• 2013

Zirconium oxide ($ZrO_2$) nano porous membranes were fabricated by electrochemical two-step anodization with an electropolished zirconium substrate in inorganic water-based and organic electrolyte systems containing small amounts of fluoride. Using two-step anodization and organic electrolytes, highly regular and ordered nanotubular $ZrO_2$ oxide layers can be compared with aqueous electrolytes. The morphology and size of the nano porous layers were characterized by FE-SEM (field emission scanning electron microscopy), XRD (X-ray diffraction), and EDS (energy dispersive spectroscopy). Luminescence properties were investigated by photoluminescence measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Advances in materials Research
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• v.2 no.2
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• Current Applied Physics
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• v.18 no.11
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• pp.1458-1464
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• 2018

An improved method for the preparation of g-$C_3N_4$ is described. Currently, heating (> $400^{\circ}C$) of urea is the common method used for preparing the g-$C_3N_4$. We have found that sonication of melamine in $HNO_3$ solution, followed by washing with anhydrous ethanol, not only reduce the crystallite size of g-$C_3N_4$ but also facilitate intriguing electronic structure and photoluminescence (PL) properties. Moreover, loading of metal (Pt and Ag) nanoparticles, by applying the borohydride reduction method, has resulted in multicolor-emission from g-$C_3N_4$. With the help of PL spectra and local electronic structure study, at C K-edge, N K-edge, Pt L-edge and Ag K-edge by X-ray absorption spectroscopy (XAS), a precise mechanism of tunable luminescence is established. The PL mechanism ascribes the amendments in the transitions, via defect and/or metal states assimilation, between the ${\pi}^*$ states of tris-triazine ring of g-$C_3N_4$ and lone pair states of nitride. It is evidenced that interaction between the C/N 2p and metal 4d/5d orbitals of Ag/Pt has manifested a net detraction in the ${\delta}^*{\rightarrow}LP$ transitions and enhancement in the ${\pi}^*{\rightarrow}LP$ and ${\pi}^*{\rightarrow}{\pi}$ transitions, leading to broad PL spectra from g-$C_3N_4$ organic semiconductor compound.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.