• 제목/요약/키워드: Photoluminescence spectroscopy

검색결과 272건 처리시간 0.034초

CdTe 나노결정의 합성과 특성분석에 관한 연구 (A study on the synthesis and characterization of CdTe nanocrystals)

  • 주상민;강윤묵;김동환
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.111-111
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    • 2003
  • 반도체 나노결정은 양자구속효과(quantum confinement effect)에 의한 광학적인 특성을 갖기 때문에 광전자공학(optoelectronic), 광전지(photovoltaic)분야에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 고순도의 CdTe 나노결정을 1-thioglycerol 표면 완화제(surface stabilizer)로 사용하여 수용액 상태로 합성하였다. 모든 실험은 $N_2$ 분위기의 삼각플라스크에서 실험하였다. Cadmium 소오스로는 Cd(CIO$_4$)$_2$.6$H_2O$(Cadmium perchlorate hydrate-Aldrich)를 사용하였고 Tellurium 소오스로는 A1$_2$Te$_3$(Aluminum telluride-CERAC)와 H$_2$SO$_4$가 반응하여 H$_2$Te gas가 주입되도록 하였다. 합성된 CdTe 나노결정은 core-shell 형태로 존재하며 결정크기에 따른 특성분석을 위해서 High Resolution Transmission Electron Microscope (HRTEM), Photoluminescence spectroscopy, X-ray diffraction(XRD), UV-vis absorption spectra 분석을 하였다 또한 CdTe 나노결정을 나노와이어로 제작하여 CdTe 나노결정을 이용한 태양전지 제작에 응용하고자 한다.

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Optical characteristics of GaN-based quantum structures

  • 조용훈
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.22-22
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    • 2003
  • Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

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ZnSSe:Te/ZnMgSSe DH 구조 청색~녹색발광다이오드의 개발 (Development of ZnSSe:Te/ZnMgSSe DH structure Blue~Green tight Emitting Diodes)

  • 이홍찬
    • Journal of Advanced Marine Engineering and Technology
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    • 제27권1호
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    • pp.33-41
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    • 2003
  • The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

RF magnetron sputtering 방법에 의해 Si(100) 기판 위에 성장된 GaN 박막의 특성에 대한 연구 (Charaterization of GaN Films Grown on Si(100) by RF Magnetron Sputtering)

  • 이용일;성웅제;박천일;최우범;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.570-573
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    • 2001
  • In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

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Origin of Green Emission in Extremely Pure Oligofluorene Films: Effect of Molecular Packing

  • Kang, Ji-Hoon;Shin, Na-Yool;Jo Jung-Ho;Keivanidis Panagiotis E.;Laquai Frederic;Wegner Gerhard;Yoon, Do-Y.
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.236-236
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    • 2006
  • Time-resolved photoluminescence spectroscopy measurements of oligofluorenes with various side chains were studied. With extremely pure oligofluorenes, two kinds of red-shifted green emission were observed which have different origins; aggregate formation and on-chain chemical defect. The green emission around 490 nm was largely dependent upon the intermolecular interaction of oliglfuorene molecules. Moreover, by using oligofluorene with high-order liquid crystalline phase, we observed that the green emission was strongly dependent upon the molecular packing in solid films.

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Luminescent Polynorbornene/Quantum Dot Composite Nanorods and Nanotubes Prepared from AAO Membrane Templates

  • Oh, Se-Won;Cho, Young-Hyun;Char, Kook-Heon
    • Macromolecular Research
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    • 제17권12호
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    • pp.995-1002
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    • 2009
  • Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As 다중 양자 우물의 특성 평가 (Material properties of In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As MQWs grown on InP substrates by low-temperature molecular beam epitaxy)

  • 이종수;최우영
    • 전자공학회논문지D
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    • 제35D권5호
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    • pp.80-86
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    • 1998
  • Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

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High resolution patterning of polyfluorene derivative containing photo cross-linkable oxetane units

  • Park, Moo-Jin;Lee, Jeong-Ik;Chu, Hye-Yong;Kim, Seong-Hyun;Zyung, Taeh-Young;Hwang, Do-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1419-1420
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    • 2005
  • We have synthesized a photo patternable blue lightemitting polyfluorene (PF) derivative containing cross-linkable oxetane units. Poly(9,9-bis-(4-octyloxyphenyl)- fluorene-2,7-diyl-alt-9,9-bis-((3-hexyloxy-3'- ethyl)-oxetane)-fluorene-2,7-diyl) has been synthesized by Suzuki coupling polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope UV/visible spectroscopy, photoluminescence and scanning electron microscope (SEM). We obtained fine patterns with 10 mm resolution using the polymer film after exposure and development. This patterning method using conjugated polymers can be applicable to make fine pixels for PLEDs and OFETs.

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InP/InGaAsP 광자결정 구조 제작을 위한 건식 식각 특성 (Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure)

  • 이지면
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1271-1276
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    • 2004
  • Two-dimensionally arrayed nanocolumn lattices were fabricated by using double-exposure laser holographic method. The hexagonal lattice was formed by rotating the sample with 60 degree while the square lattice by 90 degree before the second laser-exposure. The reactive ion etching for a typical time of 30 min using CH$_4$/H$_2$ plasma enhanced the aspect-ratio by more than 1.5 with a slight increase of the bottom width of columns. The etch-damage was observed by photoluminescence (PL) spectroscopy which was removed by the wet chemical etching using HBr/$H_2O$$_2$/$H_2O$ solution, leading into the enhanced PL intensities of the PCs.

인산 처리 공정에 의한 ZnS:Ag,Cl 형광막의 발광 열화특성의 개선 (Improvement of Luminescence Degradation of Phosphor Screen by Surface Modification with $H_{3}PO_{4}$ Solution Treatment)

  • 박진민;전덕영;차승남;진용완;김종민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.49-52
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    • 2002
  • Degradation characteristics of cathodoluminescence (CL) of ZnS:Ag,Cl phosphor were investigated with measurements of CL and photoluminescence (PL). Phosphoric acid treatment was performed to phosphor particles in order to improve CL degradation of phosphor screen that occurred during panel sealing process, and we will discuss mechanisms of degradation and improvement of luminescence mainly with help of AES (auger electron spectroscopy) analysis.

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