• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.637-639
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• 1997

Samples of $YTa_7O_{19}$ doped with $Tm^{3+}$ were prepared using the solid state reaction method to investigate their photoluminescence characteristics. The samples were identified by XRD and SEM, and the optical measurement was also carried out. Under 359 nm excitation, $YTa_7O_{19}$ doped with $Tm^{3+}$ exhibited a narrow-band blue emission, at about 455 nm. The maximum emission intensity was obtained at $YTa_7O_{19}$ doped with 0.12 mole $Tm^{3+}$. This revealed the concentration quenching of emission intensity.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.232-236
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• 2006

The Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd) phosphors were synthesized by solid-state reaction at 1350oC for 10h under reducing atmosphere in order to improve properties of blue emitting phosphors. Compared with commercial blue phosphors, the Y2SiO5:Ce blue phosphors substituted with various elements showed significant enhancement of the emission intensity. Particularly, 1 mol% Li doped Y2SiO5:Ce phosphors indicated the maximum emission intensity in the photoluminescence spectra. Thanks to SEM analyses revealed that the morphology of Y2SiO5:(Ce,Li) blue phosphors was a pseudo-spherical with particle size of 3m.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.380-386
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• 2008

Optimized volume production of nanoscale phosphor powders synthesized by radio frequency (RF) plasma process was developed for the application to plasma display panels. The nano powders were synthesized by feeding the both solid and liquid type precursors, and nanoparticle phosphors were characterized in terms of particle size, shape, and photoluminescence (PL) intensities. Computer simulation was performed in advance to determine the process parameters, and nano phosphors were evaluated by comparing with current commercial micron-sized phosphor powders. Practical feeding of both solid and liquid type precursor was proved to be effective for volume production.The developed process showed a potential as a production method for red, blue and green phosphor although the PL intensity still needs further improvement.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.17-20
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• 2015

The physical effects of H-plasma treatment on ZnO thin film have been studied using photoluminescence(PL) spectroscopy. Four characteristic peaks have been identified: (i) $D^0X$ peak (neutral donor-bound exciton), showing relatively small integrated intensity after H-plasma treatment, indicates that H-plasma passivates the neutral donors in ZnO at low temperatures. The rapid decrease in the integrated intensity of the peak as the temperature goes up is considered to be due to the ionization of neutral donors. (ii) H-related complex-bound exciton peak appears at the low temperatures (10 K~80 K) after H-plasma treatment, showing the same thermal evolution as $D^0X$ peak. (iii) FX (free exciton) peak starts to show up at 60 K and grows more and more as the temperature goes up, which is considered to be related to the increase in free electron concentration in the film. (iv) violet band is intensified after H-plasma, which means more defects and impurities are generated by H-plasma process.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.880-884
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• 2011

ZnO nanorods were grown by hydrothermal method. Two kinds of seed layers, Au film and island seed layers were prepared to investigate the effect of seed layer on ZnO nanorods. The ZnO nanorod on Au island seed layer has more unifom diameter and higher density compared to that of ZnO nanorod on Au film seed layer. The ZnO nanorods on Au island seed layer were annealed at various temperatures ranging from 300 to $850^{\circ}C$. The pinholes at the surface of the ZnO nanorods is formed as the annealing temperature is increased. It is noted that the pyramid structure on the surface of ZnO nanorod is observed at $850^{\circ}C$. The intensity of ZnO (002) diffraction peak in X-ray diffraction pattern and intensity of near band edge emission (NBE) peak in photoluminescence (PL) are increased as the ZnO nanorods were annealed at the temperature of $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.104-104
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• 1999

Cerium dioxide 박막의 포토루미네슨에 관해서는 Cerium 4f band에서 oxygen 2p band로의 transition에 의한 발광(400nm) 현상이 보고되었다. 또한 Indium Oxide 박막의 발광(637nm0 현상이 보고되었다. 본 연구에서는 3족인 Indium을 Si/In/CeO2/Si 구조와 CeO2/Si 구조에 도핑하여 포토루미네슨스 현상을 관찰하였다. E-beam evaporator를 사용하여 Silicon(111) 기판에 Cerium dioxcide 박막을 성장시킨 경우의 두가지 시료를 분석하였다. 포토루미네슨스 관찰을 위해서 Ge-Cd laser (325nm)가 사용되었으며 Indium의 도핑양과 분포 상태를 알기 위해 SIMS와 ADP를 이용하여 분석하였다. Indium양에 대한 포토루미네슨스 변화와 열처리 후의 indium의 분포의 변화에 의한 포토루미네슨스 변화를 관찰하였다. 상온에서 In/CeO2/Si 시료와 Si/In/CeO2/Si 시료에 대한 포토루미네슨스 현상을 관찰한 결과 Si/In/CeO2/Si 시료에서만 500nm(2.5eV)에서 발광 현상이 관찰되었다. 도핑된 indium은 ADP에서는 검출되지 않고 SIMS에서만 검출되어 ADP의 detection range(1-0.1%) 이하의 양이 도핑된 것으로 추측된다. 도핑된 Indium의 양이 증가할수록 포토루미네슨스의 Intensity가 증가하였다. 또한 열처리(110$0^{\circ}C$, 1min) 후 포토루미네슨스의 peak위치가 390nm(3.18eV)로 변화하였다. Si/In/CeO2/Si에서 포토루미네슨스 현상이 관측되고 Intensity가 indium의 양에 의존하므로 완전하지 못한 Cerium dioxide의 CeOx 구조와 indium과의 결합이 포토루미네슨스의 원인으로 추측된다. 열처리 후 SIMS의 분석결과 indium의 분포가 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.412-414
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• 2003

This paper is about research of scintillator layer, which is used for Hybrid method to increase electric signals in a-Se, the material of Direct method. In case of the thermal evaporation, CsI has column structure which is an disadvantage as scintillator. But it decreases scattering of incident X-ray, has better Light output intensity than other scintillation materials. CsI was made by Thermal evaporation. The Doping material, Na, 0.1, 0.3, 0.5, 0.7g were added in each sample. Analysis of absorbed wavelength, PL(Photoluminescence), Light output intensity, SEM, and XRD analysis were performed to analyze optical characteristics. Doping rate of CsI:Na to use as scintillation layer in a-Se based detector could be optimized.