• Journal of the Korean Society for Precision Engineering
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• v.24 no.5
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• pp.89-96
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• 2007

Inkjet printing has become one of the most attractive manufacturing techniques in industry. Especially inkjet printing technology will soon be part of the PCB (Printed Circuit Board) fabrication processes. Traditional printing on PCB includes screen printing and photolithography. These technologies involve high costs, time-consuming procedures and several process steps. However, by inkjet technology manufacturing time and production costs can be reduced, and procedures can be more efficient. PCB manufacturers therefore willingly accept this inkjet technology to the PCB industry, and are quickly shifting from conventional to inkjet printing. To produce the printed circuit board by the inkjet technology, it must be harmonized with conductive nano ink, printing process, system, and inkjet printhead. In this study, micro patterning of conductive line has been investigated using the piezoelectric printhead driven by a bipolar voltage signal is used to dispense 20-40 ${\mu}m$ diameter droplets and silver nano ink which consists of 1 to 50 nm silver particles that are homogeneously suspended in an organic carrier. To fabricate a conductive line used in PCB with high precision, a printed line width was calculated and compared with printing results.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.497-504
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• 2014

The digital signage display is actively researched as the next generation of large FPD. To commercialize those digital signage display, the manufacturing cost must be downed with printing method instead of conventional photolithography. Here, we demonstrate a reverse offset printed TFT electrodes for the digital signage display. For the fabricated source/drain and gate electrode, we used Ag ink, silicone blanket, Clich$\acute{e}$ and reverse offset printer. We printed uniform TFT electrode patterns with narrow line width(10 ${\mu}m$ range) and thin thickness(nm range). In the end the printing source/drain and gate electrode are successfully achieved by optimization of experimental conditions such as Clich$\acute{e}$ surface treatment, ink coating process, delay time, off/set process and curing temperature. Also, we checked that the printing align accuracy was within 5 ${\mu}m$.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.549-550
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• 2006

It has become topic continuously at MEMS or semiconductor process to form three-dimensional multilayer structure. In this paper, we devised the new polymer pattern method that has multilayer structure. This is method that uses different kind of polymeric material. Specially, polymers used in this study that we propose became all pattern by photolithography, prevented that process increases. Here, polymer that we use used polymer of epoxy order called "SU-8" and polymer of novolak resin called "AZ-1518". The result, "SU-8" was formed pattern to 3.5um thickness, and "AZ-1518" about pattern 3um thickness. Also, It was been 6um thickness at same pattern area.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.274.2-274.2
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• 2013

We described a simple and efficient fabrication method for generating microfluidic channels with a circular-cross sectional geometry by exploiting the reflow phenomenon of a thick positive photoresist. Initial rectangular shaped positive photoresist micropatterns on a silicon wafer, which were fabricated by a conventional photolithography process, were converted into a half-circular shape by tuning the temperature to around $105^{\circ}C$. Through optimization of the reflow conditions, we could obtain a perfect circular micropattern of the positive photoresist, and control the diameter in a range from 100 to 400 ${\mu}m$. The resultant convex half-circular photoresist was used as a template for fabricating a concave polydimethylsiloxane (PDMS) through a replica molding process, and a circular PDMS microchannel was produced by bonding two half-circular PDMS layers. A variety of channel dimensions and patterns can be easily prepared, including straight, S-curve, X-, Y-, and T-shapes to mimic an in vivo vascular network. To inform an endothelial cell layer, we cultured primary human umbilical vein endothelial cells (HUVECs) inside circular PDMS microchannels, and demonstrated successful cell adhesion, proliferation, and alignment along the channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.79-84
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• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.444-449
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• 2023

As electronic devices become smaller and more integrated, the demand for manufacturing thin, flexible printed circuit boards (FPCBs) has increased. Although FPCBs are conventionally manufactured by a photolithography method using dry film resist, this process is complicated, and the mask is specifically designed to obtain the precision of the desired circuit line width. In this regard, manufacturing FPCBs with fine patterns through the direct printing method of photocurable inks has gained growing attention. Since the manufacturing process of FPCBs is based on the direct printing method that includes etching and stripping processes utilizing acid and basic chemicals, controlling the adhesion strength, the etching resistance, and the strippability of photocured inks has drawn a lot of attention for the fabrication of fine patterns through photocurable inks. In this study, acrylic ink with various types and contents of the photoinitiator was prepared, and the curing behavior was analyzed. Also, the adhesion strength, etching resistance, and strippability were analyzed to evaluate the applicability of developed photocurable etching resist inks.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1376-1381
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• 2012

Optical devices are used extensively in the field of information network. Increasing demand for optical device, optical interconnection has been a important issue for commercialization. However many problems exist in the interconnection between optical device and optical fiber, and in the case of the multi-channel, problems of the optical alignment and optical array arise. For solving the alignment and array problem of optical device and the optical fiber, we fabricated fiber alignment and array by using imprint technology. Achieved higher precision of optical fiber alignment and array due to fabricating using imprint technology. The silicon stamp with different depth was fabricated using the conventional photolithography. Using the silicon stamp, a nickel stamp was fabricated by electroforming process. We conducted imprint process using the nickel stamp with different depth. The optical alignment and array by fabricating the patterns of optical device and fiber alignment and array using imprint process, and achieved higher precision of decreasing the dimensional error of the patterns by optimization of process. The fabricated optical interconnection of PLC device was measured 3.9 dB and 4.2 dB, lower than criteria specified by international standard.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.13-19
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• 2004

We have been studied on the high concentration ozonized water production technology which substitute for the SPM wet cleaning solution process as the PR strip process after the photolithography process in the semiconductor and flat panel display manufacturing. In this work, we have developed the surface discharge type ozone generator which has the characteristics of the 12 ［wt%］ ozone concentration at the oxygen gas flow of 0.5［ℓ/min］ oxygen per cell and also developed the high efficiency ozone contactor for the mixing ozone gas with deionized water. As the production test results of the ozonized water, we obtained the ozonized water concentration above 80［ppm］ at the 10［wt%］ ozone gas concentration, and also had a good result of the PR strip rate of 147［nm/min］. at the 70［ppm］ ozonized water.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.204-208
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• 2018

Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.