• Title/Summary/Keyword: Photo-conductivity

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Preparation of Solventless UV Curable Thermally Conductive Pressure Sensitive Adhesives and Their Adhesion Performance

  • Baek, Seung-Suk;Park, Jinhwan;Jang, Su-Hee;Hong, Seheum;Hwang, Seok-Ho
    • Elastomers and Composites
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    • v.52 no.2
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    • pp.136-142
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    • 2017
  • Using various compositions of thermally conductive inorganic fillers with boron nitride (BN) and aluminum oxide ($Al_2O_3$), solventless UV-curable thermally conductive acrylic pressure sensitive adhesives (PSAs) were prepared. The base of the PSAs consists of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and isobornyl acrylate.The compositions of the thermally conductive inorganic fillers were 10, 15, 20, and 25 phr in case of BN, and 20:0, 15:5, 10:10, 5:15, and 0:20 phr in case of $BN/Al_2O_3$. The adhesion properties like peel strength, shear strength, and probe tack, and the thermal conductivity of the prepared PSAs were investigated with different thermally conductive inorganic filler contents. There were no significant changes in photo-polymerization behavior with increasing BN or $BN/Al_2O_3$ content. Meanwhile, the conversion rate and transmittance of the PSAs decreased and their thermal stabilities increased with increasing BN content. Their adhesion properties were also independent of the BN or $BN/Al_2O_3$ content. The dispersibility of BN in the acrylic PSAs was better than that of $Al_2O_3$ and it ranked the thermal conductivity in the following order: BN > $BN/Al_2O_3$ > $Al_2O_3$.

A photoswitch from conjugative aromatic polymers

  • Kwon, Tae-Chang;Kim, Yong-Jung;Kim, Yu-Na;Lee, Hyo-Jin;Rameshbabu Krishnamurthy;Sarwade Bhimrao D.;Kim, Eun-Kyoung
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.174-174
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    • 2006
  • By condensing two different functional monomers, highly fluorescent aromatic polymers were prepared to produce a conjugated- conjugated spacer-type copolymer or conjugated-non-conjugated spacer-type copolymer. As synthesized polymers were soluble in an organic solvent and showed significantly enhanced optical properties compared to its monomer. Variation in the monomer composition afforded polymers having multifunctionaility such as photochromic-fluorescent polymers. Transparent thin films of the polymer as a solid medium were prepared using spin coating method and fabricated as a photoswitch, which showed photo-induced conductivity switching properties depending on the core monomeric unit in the polymers.

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A Backlight Feedback Control System with Integrated Color Sensor on LCD

  • Lee, Ki-Chan;Park, Yun-Jae;Ko, Hyun-Seok;Moon, Seung-Hwan;Park, Jin-Hyeok;Berkeley, Brian;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1550-1551
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    • 2005
  • In this paper, to improve the well-known photo conductivity degradation of amorphous silicon, a new LASER immersion treatment has been applied. The optical feedback control LED backlighting system with integrated LCD panel sensor increased the color variation less than 0.008 ${\Delta}u'v'$ compared to 0.025 for a non-feedback system.

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Synthesis of Dye-sensitized Solar Cells with Titanium Mesh Electrode (티타늄 메쉬 전극구조를 이용한 염료 태양전지 제작)

  • Paeng, Sung-Hwan;Kim, Doo-Hwan;Park, Min-Woo;Sung, Youl-Moon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.12
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    • pp.2436-2440
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    • 2009
  • In this work, TCO-less dye-sensitized solar cells (DSCs) using Ti-mesh layer is fabricated for high-efficient low-cost solar cell application. The Ti-mesh metal can replace TCO in the photo-electrode part of DSCs, thus the cell structure is composed of a glass/dye sensitized TiO2 particle/ Ti-mesh layer/electrolyte/Pt sputtered counter electrode/ glass. The Ti-mesh electrode with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3^-$ through the mesh hole. Thin Ti-mesh ($\sim40{\mu}m$ in thickness) electrode material is processed using rapid prototype method. The efficiency of prepared TCO-less DSCs sample is about 1.45 % ((ff: 0.5, Voc: 0.52V, Jsc: 5.55 $mA/cm^2$).

Preparation of pore-filling membranes for polymer electrolyte fuel cells and their cell performances (고체 알칼리 연료전지용 음이온 교환 세공충진막의 제조 및 특성)

  • Choi, Young-Woo;Park, Gu-Gon;Yim, Sung-Dae;Lee, Mi-Soon;Yang, Tae-Hyun;Kim, Chang-Soo
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.150-153
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    • 2009
  • Anion exchange polymer electrolyte pore-filling membranes consisting of the whole hydrocarbon materials were prepared by photo polymerization with various quaternary ammonium cationic monomers and characterized on the properties for applying to solid alkali fuel cell (SAFC). Hydrocarbon porous substrates such as polyethylene were used for the preparation of the pore-filling membranes. The hydroxyl ion conductivity of the polymer electrolyte membranes prepared in this research was dependent on the composition ratio of an electrolyte monomer and crosslinking agents used for polymerization. Furthermore, these pore-filling membranes have commonly excellent properties such as smaller dimensional affects when swollen in solvents, higher mechanical strength, lower fuel crossover through the membranes, and easier preparation process than those of traditional cast membranes.

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The Properties of Electrical Conduction and Photoconduction in polyphenylene Sulfide(PPS) by Uniaxal Elongation (일축연신에 따른 Polyphenylene Sulfide(PPS)의 전기전도 및 광전도 특성)

  • Lee, Un-Yong;Jang, Dong-Uk;Shin, Tae-Su;Lim, kee-Joe;Ryu, Boo-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.763-767
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    • 1998
  • In this paper, it is investigated how the morphology and electrical properties in Polyphenylene Sulfide(PPS) changed by uniaxial elongation. XRD(X-ray diffraction) pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. electrical conduction mechanism of PPS is explained as Schottky emission mechanism. the electrical current is decreased by increasing elongation ratio. The conductivity is changed considerably above the glass transition temperature around 82(>$^{\circ}C$). The band gap of PPS is evaluated as 3.7~4(eV)

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Transparent Electrodes for Semitransparent Perovskite Solar Cells (반투명 페로브스카이트 태양전지용 투명전극 소재)

  • Lee, Phillip;Ko, Min Jae
    • Current Photovoltaic Research
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    • v.6 no.3
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    • pp.74-80
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    • 2018
  • Recently, perovskite solar cells have shown tremendous improvement in power conversion efficiencies. Moreover, they have potential in semitransparent solar cell applications due to their high absorption coefficients. In order to fabricate semitransparent perovskite solar cells with good performance, it is essential to consider the suitability of transparent electrode materials in various aspects, such as transparency, conductivity and fabrication process. In this review, candidate materials for transparent electrodes in perovskite solar cells including carbon-based nanomaterials, conductive polymers and metallic nanostructures are discussed.

High Efficient and Stable Dye-sensitized Solar Cells (DSSCs) with Low Melting Point Glass Frits

  • Kim, Jong-U;Kim, Dong-Seon;Kim, Hyeong-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.42.2-42.2
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    • 2011
  • $TiO_2$ films were modified by adding a glass frit as a light scattering particle and applied to an anode electrode in dye-sensitized solar cells (DSSCs) to enhance the adhesion between $TiO_2$ and fluorine doped transparent oxide (FTO). Low melting point glass frits at contents of (3 to 7wt%) were added to the nano crystalline $TiO_2$ films. The light scattering properties, photovoltaic properties and microstructures of the photo electrodes were examined to determine the role of the low glass transition temperature ($T_g$) glass frit. Electrochemical impedance spectroscopy, Brunauer-Emmett-Teller method and scratch test were conducted to support the results. The DSSC with the $TiO_2$ film containing 3wt% low Tg glass frit showed optimal performance (5.1%, energy conversion efficiency) compared to the $TiO_2$-based one. The photocurrent density slightly decreased by adding 3wt% of the frit due to its large size and non conductivity. However, the decrease of current density followed by the decrease of electron transfer due to the large frit in $TiO_2$ electrode was compensated by the scattering effect, high surface area and reduced the electron transfer impedance at the electrolyte-dye-$TiO_2$ interface. The stability of the photo electrodes was improved by the frit, which chemically promoted the sintering of $TiO_2$ at relatively low temperature ($450^{\circ}C$).

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The study of ${\mu}c-Si/CaF_2$/glass properties for thin film transistor application (박막트랜지스터 응용을 위한 ${\mu}c-Si/CaF_2$/glass 구조특성연구)

  • Kim, Do-Young;Ahn, Byeung-Jae;Lim, Dong-Gun;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1514-1516
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    • 1999
  • This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

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Microcrystalline Silicon Thin Films and Solar Cells by Hot-Wire CVD (Hot-Wire CVD법에 의한 미세결정 실리콘 박막 증착 및 태양전지 응용)

  • Lee, Jeong-Chul;Yoo, Jin-Su;Kang, Ki-Hwan;Kim, Seok-Ki;Yoon, Kyung-Hoon;Song, Jin-Soo;Park, I-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.66-69
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    • 2002
  • This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

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