• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Polymer(Korea)
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• v.37 no.5
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• pp.638-641
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• 2013

GNS/PVDF composites were prepared using graphite nanosheets (GNS) and poly(vinylidene fluoride) (PVDF) for flexible thermoelectric application. We measured the electrical conductivity, thermal conductivity and Seebeck coefficient of GNS/PVDF composites with different contents of GNS and then evaluated the thermoelectric properties of GNS/PVDF composites. The electrical conductivity of GNS/PVDF composites increased from 389 to 1512 S/m with increasing the content of GNS from 10 to 70 wt%. While the electrical conductivity dramatically increased, Seebeck coefficient and thermal conductivity did not show any big difference as the content of GNS increases. In this study, we demonstrated that GNS/PVDF composites improved the thermoelectric properties by decreasing the thermal conductivity due to the phonon scattering at the interfaces between polymer and GNS nanoplatelets.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Macromolecular Research
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• v.17 no.10
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• pp.791-796
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• 2009

An electrochemically and photochemically polymerizable monomer, 2-((2,3-dihydrothieno[3,4-b] [1,4]dioxin-2-yl)methoxy)ethyl methacrylate (EDOT-EMA), was explored for patterning of poly(3,4-ethylenedioxythiophene) (PEDOT) via side chain cross-linking. The polymer from EDOT-EMA was deposited electrochemically to produce polymeric EDOT (PEDOT-EMA), which was directly photo-patterned by UV light as the side EMA groups of PEDOT-EMA were polymerized to give cross-linked EMA (PEDOT-PEMA). Absorption and FTIR studies of the UV-exposed film (PEDOT-PEMA) indicated that the photo-patterning mainly originated from the photo cross-linking of the methacrylates in the side-chain. After irradiation of the film, the conductivity of the irradiated area decreased from $5.6{\times}10^{-3}$ S/cm to $7.2{\times}10^{-4}$ S/cm, possibly due to bending of the conductive PEDOT channel as a result of the side chain cross-linking. The patterned film was applied to a solid state electrochromic (EC) cell to obtain micro-patterned EC cells with lines up to 5 ${\mu}m$ wide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.267-267
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• 2010

The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of $SiH_4$ to $H_2$ during deposition. The Structural property was observed by Raman and SEM. Photo-conductivity and dark conductivity, and photo-sensitivity were observed by Sunsimulator (AM 1.5 illumination). The film color was changed by the variation of silane concentration. HWCVD is useful for the formation of Si thin films for solar cell and needs further commercialized development for mass production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.338-338
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• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.

• Advances in nano research
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• v.1 no.2
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• pp.71-82
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• 2013

A simple chemical precipitation technique is reported for the synthesis of a hybrid nanostructure of single-wall carbon nanotubes (SWCNT) and titania ($TiO_2$) nanocrystals of average size 5 nm, which may be useful as a prominent photocatalytic material with improved functionality. The synthesized hybrid structure has been characterized by transmission electron microscopy (HRTEM), energy-dispersive X-ray analysis (EDAX), powder X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. It is clearly revealed that nearly monodispersed titania nanocrystals (anatase phase) of average size 5 nm decorate the surfaces of SWCNT bundles. The UV-vis absorption study shows a blue shift of 16 nm in the absorbance peak position of the composite material compared to the unmodified SWCNTs. The photoluminescence study shows a violet-blue emission in the range of 325-500 nm with a peak emission at 400 nm. The low temperature electrical transport property of the synthesized nanomaterial has been studied between 77-300 K. The DC conductivity shows semiconductor-like characteristics with conductivity increasing sharply with temperature in the range of 175-300 K. Such nanocomposites may find wide applications as improved photocatalyst due to transfer of photo-ejected electrons from $TiO_2$ to SWCNT, thus reducing recombination, with the SWCNT scaffold providing a firm and better positioning of the catalytic material.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.448-453
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• 2018

PV module protective film plays an important role in protecting the solar cell from external environment by anti-hydrolysis polyester, UV resistance and mechanical properties. The backsheet was manufactured by using Roll-to-Roll dry laminating process. The backsheet structure is composed of 3 layers, which are PE, PET, and Fluorine polymer films. In this study, we have experimented the variation of thermal conductivities depending on MgO inputs 10% to 25% in order to confirm the dependence of the module efficiencies. High thermal conductive backsheet can increase the module output power efficiency because the heat is dissipated by spreading out the internal heat. Long-term environment weatherability tests were conducted for confirming 25 year reliability in the field such as PCT, UV, and power efficiency degradations. As the evaluation result, high thermal conductivity can be effective for increase of power efficiency of solar panel by using thermal conductive MgO masterbatch.

• Macromolecular Research
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• v.12 no.2
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• pp.195-205
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• 2004

We have synthesized new aromatic polyesters (DiPEG-HQ and DiPEG-BP) by condensation polymerization of a terephthalic acid derivative bearing a pendant oligo(oxyethylene) (DP = 7, MW = 350), which has a methoxy terminal group, and two different aromatic diols, hydroquinone and 4,4'-biphenoI. The synthesized polymers were characterized by differential scanning calorimetry (DSC), polarizing microscopy, and X-ray diffractometry for their liquid crystallinity (LC), thermal transitions, and structural morphologies in mesophases. The morphology of the LC phases depends strongly on the length of the rigid backbone repeating unit. The DiPEG-BP polymer having a longer repeating unit exhibits both layered and nematic structures before isotropization, whereas the DiPEG-HQ polymer having a shorter repeating unit shows only the layered structure in the mesophase. We found that the layer spacing for DiPEG-HQ is larger than that for DiPEG-BP. Both polymers easily form complexes with LiCF$_3$SO$_3$; we studied this complex formation by FT-IR spectroscopy. The layer spacing of the polymer-electrolyte composites increases upon increasing the amount of the lithium salt. The polymer/salt electrolyte mixtures we investigated at molar ratios of EO:salt in the range of 5-20 exhibit electrical conductivity values at 40$^{\circ}C$ of 2.4${\times}$10$\^$5/ and 1.1${\times}$10$\^$－5/ S/cm for DiPEG-HQ/LiCF$_3$SO$_3$ and DiPEG-BP/LiCF$_3$SO$_3$, respectively. At 80 $^{\circ}C$, these values are higher: 4.6${\times}$10$\^$－3/ and 1.1${\times}$10$\^$－4/ S/cm, respectively. The activation energy of conductivity depends strongly on the salt concentration.