• 전기의세계
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• v.25 no.5
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Toxicological Research
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• v.24 no.3
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• pp.227-233
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• 2008

To detect lead ions using electrochemical voltammetric analysis, Infrared Photo-Diode Electrode(IPDE) was applied via cyclic and square wave stripping voltammetry. Lead ions were deposited at 0.5 V(versus Ag/AgCl) accumulation potential. Instrumental measurements systems were made based on a simple and compact detection system. The stripping voltammetric and cyclic voltammetric optimal parameters were searched. The results yielded a cyclic range of $40{\sim}240mgl^{-1}$ Pb(II) and a square wave stripping working range of $0.5{\sim}5.00mgl^{-1}$ Pb(II). The relative standard deviation at 2 and 4 $mgl^{-1}$ Pb(II) was 0.04% and 0.02%(n=15), respectively, using the stripping voltammetric conditions. The detection limit was found to be 0.05 $mgl^{-1}$ with a 40 sec preconcentration time. Analytical interference ions were also evaluated. The proposed method was applied to determine lead ions in various samples.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2436-2440
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• 2009

In this work, TCO-less dye-sensitized solar cells (DSCs) using Ti-mesh layer is fabricated for high-efficient low-cost solar cell application. The Ti-mesh metal can replace TCO in the photo-electrode part of DSCs, thus the cell structure is composed of a glass/dye sensitized TiO2 particle/ Ti-mesh layer/electrolyte/Pt sputtered counter electrode/ glass. The Ti-mesh electrode with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3^-$ through the mesh hole. Thin Ti-mesh ($\sim40{\mu}m$ in thickness) electrode material is processed using rapid prototype method. The efficiency of prepared TCO-less DSCs sample is about 1.45 % ((ff: 0.5, Voc: 0.52V, Jsc: 5.55 $mA/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.47-48
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• 2006

Electrowetting phenomenon is applied in the various field of technology. One of that is electrowetting display as a paper like electronic paper. Fast response and easy to express a color is goodness. In spite of that, the oil movement of the electrowetting display is irregular. So it doesn't look like uniform. Because of the above reason, electrowetting display using patterned electrode is made and the characteristic of oil movement is observed. Electrode and polymer wall is patterned by photo-lithography. We analyze the oil movement according to the variation of size and the position of etched electrode area.

• Korean Journal of Optics and Photonics
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• v.21 no.1
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• pp.6-11
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• 2010

Fluorescent photopolymer film was prepared with composition containing acrylate monomer, binder, a visible light sensitive photo initiator, and fluorescent anthracene polymer. A fluorescent grating pattern was inscribed on the photopolymer film using a 2-beam coupling method. A 514 nm laser was coupled to generate a beam-interference pattern. A highly fluorescent diffractive line pattern was formed on the fluorescent photopolymer within 30 sec. of exposure. The fluorescence intensity was highly enhanced in the patterned area, possibly due to the change in the environment of the fluorescent polymers by the photo-polymerization of monomers. Under a photo-mask, a gap electrode pattern was formed of fluorescent gratings with a sub-micron scale, which was matched well to the calculated value ($2.5\;{\mu}m$ and $0.6\;{\mu}m$) based on the refractive index of the photopolymer and beam incident angle ($3.4^{\circ}$, $15^{\circ}$) to the photopolymer surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.348-348
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• 2016

Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.495-496
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• 2006

Electrowetting phenomenon is applied in the various field of technology. One of that is electrowetting display as a paper like electronic paper. Fast response and easy to express a color is goodness. In spite of that, the oil movement of the electrowetting display is irregular. So it doesn't look like uniform. Because of above reason, electrowetting display using patterned electrode is made and the characteristic of oil movement is observed. Electrode and polymer wall is patterned by photo-lithography. We analyze the oil movement according to the variation of size and the position of etched electrode area.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.774-779
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• 1988

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.04b
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• pp.383-388
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• 1995

The ARC light has been measured using photo-detect system under different TIG welding condition. Light detect system consists of photo diode, ND Filter, OP Amp. A/D convertor and PC. The purpose of this experiment is to show the relationship between ARC light and process variables such as welding current, torch travel speed, etc. The results can be applied to estimate the condition of welding process and the quality of welding products. The signal of ARC light has periodic patterns in good TIG welding condition whereas in abnormal condition the signal has different pattern. Amount of Ar shielding gas and distance from electrode to specimen affect the signal pattern significantly.