Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Studies on Fabrication of Diodes and Photo Cell Using BP-Si structure

BP-Si구조를 이용한 다이오드 및 Photo Cell의 제작에 관한 연구

  • 홍순관 (서울시립대학교 전자공학과) ;
  • 복은경 (서울시립대학교 전자공학과) ;
  • 김철주 (서울시립대학교 전자공학과)
  • Published : 1988.07.01
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Abstract

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

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