• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.4
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• pp.35-41
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Macromolecular Research
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• v.17 no.10
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• pp.791-796
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• 2009

An electrochemically and photochemically polymerizable monomer, 2-((2,3-dihydrothieno[3,4-b] [1,4]dioxin-2-yl)methoxy)ethyl methacrylate (EDOT-EMA), was explored for patterning of poly(3,4-ethylenedioxythiophene) (PEDOT) via side chain cross-linking. The polymer from EDOT-EMA was deposited electrochemically to produce polymeric EDOT (PEDOT-EMA), which was directly photo-patterned by UV light as the side EMA groups of PEDOT-EMA were polymerized to give cross-linked EMA (PEDOT-PEMA). Absorption and FTIR studies of the UV-exposed film (PEDOT-PEMA) indicated that the photo-patterning mainly originated from the photo cross-linking of the methacrylates in the side-chain. After irradiation of the film, the conductivity of the irradiated area decreased from $5.6{\times}10^{-3}$ S/cm to $7.2{\times}10^{-4}$ S/cm, possibly due to bending of the conductive PEDOT channel as a result of the side chain cross-linking. The patterned film was applied to a solid state electrochromic (EC) cell to obtain micro-patterned EC cells with lines up to 5 ${\mu}m$ wide.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.313-316
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• 2013

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.170-173
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• 2006

Recently, with increasing efficiency of DSC (photo-electrochemical using a nano-particle), The Performance of DSC solar generation system also needs improvement. The approach consists of a Fly-back DC-DC (transfer ratio 1:10) converter to boost the DSC cell voltage to 300VDC. The four switch (MOSFET) inverter is employed to produce 220V, 60Hz AC outputs. High performance, easy manufacturability, lower component count., safety and cost are addressed. Protection and diagnostic features form an important part of the design. Another highlight of the proposed design is the control strategy, which allows the inverter to adapt to the: requirements of the load as well as the power source. A unique aspect of the design is the use of the DSP TMS320LF2406 to control the inverter by current and voltage feed-back. Efficient and smooth control of the: power drawn from the DSC Cell is achieved by controlling the front end DC-DC converter in current mode.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Journal of Electrochemical Science and Technology
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• v.1 no.2
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• pp.81-84
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• 2010

In dye-sensitized solar cells (DSSCs), the back transfer of photo-generated electrons from FTO glass to triiodide ions in an electrolyte is an important loss mechanism, which leads to low cell efficiency. Recently, this back electron transfer was greatly suppressed by the introduction of a compact $TiO_2$ blocking layer, which was prepared by the treatment of $TiCl_4$ solution. In the present work, more detailed $TiCl_4$ treated surface conditions on FTO substrate were investigated and DSSC performances were correlated with the surface morphology as well as dark current behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.269-269
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• 2013

Redox cycling in between the two working electrodes in an electrochemical cell can lead a great signal enhancement. In this work, we report on a systematic examination of current amplification along with the decrease in the gap distance of a nanogap device which was fabricated by the combination of photo and chemical lithography [1]. The gap distance was controlled by the chemical lithographic process of surfacecatalyzed growth of metallic layer on pre-defined electrodes with wider initial gap. Enhancement of the redox current of ferri/ferrocyanide was observed upon gap distance reduction and the current is amplified about a thousand times in this redox system when the gap distance was decreased from 200 nm to 30 nm. The experimental results were discussed on the basis of the cyclic voltammetry (CV), atomic force microscopy (AFM) and scanning electron microscopy (SEM).

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1338_1339
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• 2009

Dye-sensitized solar cell (DSC) consists of photo electrode, counter electrode and electrolyte. Photo electrode has titanium oxide layer with dye molecule to create electrons. And counter electrode is made of one layer that has catalytic ability for redox system such as the iodide/triiodide couple. Most DSC researchers use platinum as catalyst on counter electrode because platinum has good catalytic ability and conductivity. Platinum is doped on fluorine-doped tin oxide glass with different methods such as sputtering method, electrochemical method and so on. In this paper, we deposit platinum on counter electrode glass with two methods. One is the radio frequency (RF) sputtering method and the other is the chemical method with heating treatment. Finally, we compare the photovoltaic characteristics of DSCs that are assembled using two different counter electrodes.