• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.89-94
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• 1992

The kinetics of volatilization of phosphorous oxide from phosphosilicate glassceramic powders prepared by a sol-gel process were investigated at a given temperature. The rate of P2O5 vaporization increased with the P2O5 concentration in the phosphosilicate powder. Vaporization from the powder containing 46% P2O5 was analyzed using a kinetic model for diffusion limited evaporation. The diffusion through phosphosilicate glass in the surface of each particle in the temperature range 800~85$0^{\circ}C$ are presented.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.32-36
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• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.131-136
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• 1995

It has been reported that the biocement obtained by mixing $CaO-SiO_2-P_2O_5$ glass powders with ammonium phosphate solution has biocompatibility as will as high strength. The hardening mechanism and hydroxyapatite forming mechanism were discussed when $53.6%CaO_1,\; 38.1%SiO_2,\; 7.7P_2O_6,\; 0.6%CaF_2$(mole %) glass powder was reacted with ammonium phosphate solution and reacted in tris-buffer solution, respectively. High strength hardened biocement was obtained for the specimen with $CaNH_4PO_4\;H_2O$ crystal when the glass powder was mixed with ammonium phosphate solution, and hydroxyapatite crystal was rapidly formed only in the sample with $CaNH_4PO_4\;H_2O$ crystal when it was reacted in tris-buffer solution.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.55-61
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• 1986

Phosphosilicate glass(PSG) films have been used as fusable deposited dielectrics in silicon gate MOS integrated circuits. But in this experiment BPSG(borophosphosilicate glass) will be optimized for more efficient utilization of the reactants. The BPSG films were deposited on silicon wafers by the oxidation of the hydrides at 430$^{\circ}$C in conventional atmospheric-pressure chemical-vapor-deposition (CVD) systems. Physical and chemical properties of CVD BPSG films have been characterized both for as-deposited and for fused films The. relationship between deposited BPSG film composition and infra-red absorption solution etch rate and fusion temperature is discussed and examples of BPSG composition that can be fused at 900~95$0^{\circ}C$ and 800~85$0^{\circ}C$ are given. In addition to having lower fusion temperature than PSG films BPSG films have lower as-deposited intrinsic tensile stress and low aqueous chemical etch rate they have been considered for applications where these characteristics are advantageous.