• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.493-494
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• 2006

We have demonstrated highly efficient WOLED with two separated emissive layers using a blue fluorescent dye and a red phosphorescent dye. we also obtain stable $CIE_{x,y}$ coordinates with two-layered WOLEDs. The device structure was ITO/2-TNATA/NPB/two separated emissive layers/Bphen/Liq/Al. The maximum luminous efficiency of the device was 11.6 cd/A at $20\;mA/cm^2$ and $CIE_{x,y}$ coordinates varied from (x = 0.33, y = 0.37) at 6V to (x = 0.28, y = 0.35) at 14V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.781-785
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• 2009

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses (25 and 55 nm) of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) electron transport layers. 1,1-bis[4-bis (4-methylphenyl)- aminophenyllcyclohexane (TAPC), bis[(4,6-di-fluorophenyl)-pyridinate-$N,C^{2'}$]picolinate (FIrpic) and N,N' -dicarbazolyl-3,5-benzene (mCP) were used as hole transport, blue guest and host materials, respectively. The driving voltage, electroluminescence (EL) efficiency and emission characteristics of devices were investigated. The maximum EL efficiency was 20 cd/A in the device with 55 nm BCP layer, which efficiency was about 33% higher than the device with 25 nm BCP layer. The higher efficiency in the 55 nm BCP device resulted from the enhanced electron-hole balance. In the EL spectrum of blue phosphorescent OLED with BCP layer, the relative intensity between 470 and 500 nm peaks was related to the location of emission zone.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.486-488
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• 2009

High efficiency deep blue and pure white phosphorescent organic light emitting diodes were developed using a new deep blue phosphorescent dopant, tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium (FCNIr). A high quantum efficiency of 9.1 % with a color coordinate of (0.15, 0.16) at 1,000 cd/$m^2$ was obtained in the deep blue device and a high quantum efficiency of 15.2 % with a color coordinate (0.30, 0.32) was obtained in the pure white organic light-emitting diodes. The quantum efficiency of the pure white device is the best quantum efficiency value reported in the pure white device up to now.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3711-3717
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• 2010

Four orange-red phosphorescent Ir(III) complexes were designed and synthesized based on the benzoylphenylpyridine ligand with a fluorine substituent. Multilayered OLEDs with the device structure, ITO/2-TNATA/NPB/CBP : 8% Ir(III) complexes/BCP/Liq/Al, were fabricated using these complexes as dopant materials. All the devices exhibited orange-red electroluminescence and their electroluminescent properties were quite sensitive to the structural features of the dopants in the emitting layers. Among these, the maximum luminance ($14700\;cd/m^2$ at 14.0 V) was observed in the device containing Ir(III) complex 1 as the dopant. In addition, its luminous, power and quantum efficiency were 11.7 cd/A, 3.88 lm/W and 9.58% at $20\;mA/cm^2$, respectively. The peak wavelength of electroluminescence was 606 nm with CIE coordinates of (0.61, 0.38) at 12.0 V. The device also showed stable color chromaticity with various voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.153-153
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• 2010

We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.64-65
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and exciton blocking layer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (Flrpic) as blue emission and a newly synthesized red phosphorescent material guest, Bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(III)acac). This exciton blocking layer prevents a triple-triple energy transfer between the two phosphorescent emissive layers with balanced emission of blue and red. The white device showed the Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.34, 0.40) at the maximum luminance of $24100\;cd/m^2$ and maximum luminous efficiency of 22.4 cd/A, respectively.

• Journal of the Korean Applied Science and Technology
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• v.25 no.2
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• pp.265-268
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• 2008

Among the efforts to increase the efficiency of organic light-emitting device (OLED), there is a way: doping phosphorescent materials. As a phosphorescent material, complexes of heavy transition metal, platinum, were synthesized. $Cl^-$ ion and phenyl group were used as ancillary ligands with 2-(2-pyridyl)benzimidazole (pbi) as a chromophore. The complexes were analysed by FAB-mass spectrometer and absorption and emission spectra were obtained. A phenyl group was able to shift the emission band of the complex even if it's not a chromorphore.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.549-552
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• 2008

We have developed a novel bipolar host material with both electron and hole transporting characteristics. Since CGH(Cheil Green Host) has some electron transporting characteristics, it shows increased luminance efficiency in device including TCTA and without HBL(hole blocking layer:BAlq). Maximum power efficency of CGH was 27.4lm/W at the device structure ITO/DNTPD(60)/NPB(20)/TCTA(10)/EML(30)/Alq3(20)/LIF(1)/Al. We measured device performance again without HBL. The result of CGH showing 26.0lm/W is outstanding compared to that of CBP showing 19.1lm/W without holeblocking layer. We also measured lifetime and found to be 205hr at 3000nit, that is significant result compared to the life time of CBP device showing 82hr. CGH shows high device performance with holeblocking layer. Moreover, it shows better device performance and life time than those of CBP without holeblocking.