• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.452-455
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.158-161
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• 2016

Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.435-438
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• 2005

Single phase $Zn_4Sb_3$ with $98.5\%$ of theoretical density was successfully produced by direct hot pressing of elemental powders containing $1.2 at\%$ excess Zn for compensating the evaporation during the process. Temperature dependences of thermoelectric properties were investigated from 4 K to 300 K. Seebeck coefficient, electrical conductivity, thermal conductivity as well as thermoelectric figure of merit showed the discontinuity in variation at 242K, indicating the $\alpha-\beta$, phase transformation. Interestingly, it was found that lattice thermal conductivity by phonons is dominant in total thermal conductivity of $\alpha-\beta$. Therefore, it is expected that thermoelectric properties can be improved by reduction of lattice thermal conductivity inducing lattice scattering centers by doping and solid solution.

• Electronic Materials Letters
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• v.14 no.6
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• pp.766-773
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• 2018

In this paper, temperature dependence of the excitonic bands in a mechanically exfoliated tungsten diselenide ($WSe_2$) monolayer is studied using photoluminescence and circular dichroic photoluminescence (PL) in the temperature range between 8 and 300 K. The peak energies associated with the neutral exciton (A), charged exciton (trion) and localized excitons are extracted from the PL spectra revealing a trion binding energy of around 30 meV. The circular dichroic PL measured at 8 K shows about 45% valley polarisation that sharply reduces with increasing temperature to 5% at 300 K with photoexcitation energy of 1.96 eV. A detailed analysis of the emission line-width suggests that the rapid decrease of valley polarisation with the increase of temperature is caused by the strong exciton-phonon interactions which efficiently scatter the excitons into different excitonic states that are easily accessible due to the supply of excess photoexcitation energy. The emission line-width broadening with the increase of temperature indicate residual exciton dephasing lifetime < 100 fs, that correlates with the observed rapid valley depolarisation.

• Composites Research
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• v.34 no.3
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• pp.180-185
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• 2021

Due to the formation of random three dimensional network structure, which cause a lot of scattering of phonons, the thermal conductivity is low when the liquid crystalline epoxy is cured with amine-based curing agent. This problem is solved by using a cationic initiator that can make mesogen groups to be stacked structure. In this experiment, the thermal stability is compared by investigating the activation energy of isothermal decomposition through TGA of an epoxy using an amine-based curing agent and a cationic initiator. As a result, the energy of the activation of the epoxy using a cationic initiator is high. Compared with the previous experiments, the thermal stability is similar to the thermal conductivity.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.10-13
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• 2024

We performed angle-resolved Raman spectroscopy experiments on lead-doped and undoped Bi₂Sr₂CaCu₂O_8+δ(Bi2212) samples using a 660 nm laser and analyzed the Raman tensor of the phonon modes. The phonon mode was clearly observed at the 60, 103, and 630 cm^-1 Raman shifts. The 60, 630 cm^-1 peaks were only clearly observed when the incident and scattered light polarizations were configured to be parallel. The polarization angle dependence of the amplitude of the 60, 630 cm^-1 peak on the parallel configuration shows a twofold symmetry; therefore, both peaks originate from Ag phonons and the crystal structure of Bi2212 should be considered orthorhombic. On the other hand, the 103 cm^-1 peak is clearly observed in both parallel and perpendicular configurations. Remarkably, the off-diagonal component of the Raman tensor of the 103 cm^-1 peak showed an anti-symmetry that could not be realized within the known crystal structure of Bi2212. The implications of our findings are discussed.

• Progress in Superconductivity and Cryogenics
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• v.26 no.2
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• pp.1-4
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• 2024

We investigated Pb_10-xCu_x(PO₄)₆ (0.9 < x < 1.1) (LK-99) and Cu₂S, presumed to be contained as an impurity in LK-99, in a wide spectral range from far infrared to ultraviolet using optical spectroscopy. The optical conductivity spectra of both samples were obtained from measured reflectance spectra at various temperatures from 80 to 434 K. Both samples showed several infrared-active phonons in the far and mid-infrared regions. LK-99 showed typical insulating features with a band gap of ~1 eV. Cu₂S showed a nonmonotonic temperature-dependent trend and two energy gaps: one energy gap of ~93 meV and a band gap of 2.42 eV. Our results indicate that LK-99 cannot be a superconductor because it is an insulator with a large band gap.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.