• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.53-53
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• 2018

Thermoelectric materials can convert directly waste heat to electricity and vice versa. The improvement of the thermoelectric efficiency strongly depends on the dimensionless figure of merit, $ZT=S^2{\sigma}T/{\kappa}$, where S is the Seebeck coefficient, ${\sigma}$ is the electrical conductivity, T is the absolute temperature, and ${\kappa}$ is the thermal conductivity. The thermal conductivity consists of the electronic contribution (${\kappa}_e$) and phonon contribution (${\kappa}_{ph}$). It is very challenge to increase the power factor, $S^2{\sigma}$ and to reduce the thermal conductivity simultaneously because the power factor and electronic thermal conductivity are coupled. One strategy is to decrease the phonon thermal conductivity. The phonon thermal conductivity can be decreased by controlling the grain size and structural defects such as dislocations and twinning. In order to achieve enhancements in thermoelectric efficiency, microstructures that can form numerous interfaces have been investigated intensively for controlling the transport of charge carriers and heat carrying phonons. In this presentation, we report the heterogeneous microstructure of $Mg_2Si_{0.6}Sn_{0.4}$ thermoelectric materials and investigation of its influence on thermoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.658-663
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• 2002

Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.3
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• pp.149-154
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• 2018

We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

• Journal of the Korean Magnetic Resonance Society
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• v.27 no.4
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• pp.28-34
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• 2023

We study the linear-nonlinear quantum transport theory of Wannier-Landau transition system in the confinement of electrons by a square well confinement potential. We use the projected Liouville equation method with the ensemble density projection technique. We select the dynamic value under a linearly oscillatory external field. We derive the dynamic value formula and the memory factor functions in three electron phonon coupling systems and electron impurity coupling systems of two transition types, the intra-band transitions and inter-band transitions. We obtain results that can be applied directly to numerical analyses. For simple example of application, we analyze the absorption power and line-widths of ZnO, through the numerical calculation of the theoretical result in the Landau system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.552-554
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• 1999

Phonon scattering and impact ionization models have been presented to analyze hot carrier transport in high energy region, using full band model and Fermi's golden rule. We have investigated temperature dependent properties for impact ionization process of Si using realistic energy band structures at 77K and look. The realistic full band model, obtained from the empirical pseudopotential method with local from factors, is used to calculate scattering rate. The accurate calculation of impact ionization rate requires the use of a wavevector- and frequency-dependent dielectric function ξ ( q,$\omega$). The empirical phonon scattering rate P$\sub$ph/, is given by deriving from linear function for P$\sub$ph/ versus D(E) since the phonon scattering rate is linearly depended on density of states D(E). Impact ionization rate p,, is calculated from the first principle's theory. and fitted by modified Keldysh formula having power of above 2.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1280-1286
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• 2023

MgF₂ as a moderator material has been extensively used in the beam shaping assembly (BSA) that plays an important role in the boron neutron capture therapy (BNCT). Regarded as important for applications, the thermal neutron scattering data of MgF₂ were calculated, based on the phonon expansion model. The structural properties of MgF₂ were researched by the VASP code based on the ab-initio methods. The PHONOPY code was employed to calculate the phonon density of states. Furthermore, the NJOY code was used to calculate the thermal neutron scattering data of MgF₂. The calculated inelastic cross sections plus absorption cross sections are in agreement with the available experimental data. The neutron transport in the BSA has been simulated by using a hybrid Monte-Carlo-Deterministic code NECP-MCX. The results indicated that compared with the calculation of the free gas model, the thermal neutron flux and epithermal neutron flux at the BSA exit port calculated by using the thermal neutron scattering data of MgF₂ were reduced by 27.7% and 8.2%, respectively.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.479-484
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• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.