• Journal of Mechanical Science and Technology
• /
• v.19 no.6
• /
• pp.1378-1389
• /
• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.40 no.9
• /
• pp.621-627
• /
• 2016

In this study, we present a model that can be used to calculate the phonon-surface scattering rate directly from the experimental data on phonon mean free path (MFP) spectra of nanostructures. Using this model and the recently reported length-dependent thermal conductivity measurements on $Si_{0.9}Ge_{0.1}$ nanowires (NWs), we investigate the spectral reduced MFP distribution and the spectral phonon-surface scattering rate in the $Si_{0.9}Ge_{0.1}$ NWs. From the results, it is found that the phonon transport properties with the material and the phonon frequency dependency of the spectral phonon-surface scattering rate per unit length of the NW. The model presented in this study can be used for developing heat transfer analysis models of nanomaterials, and for determining the optimum design for tailoring the heat transfer characteristics of nanomaterials for future applications of phonon nanoengineering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.5
• /
• pp.419-430
• /
• 2022

Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.1
• /
• pp.43-45
• /
• 2002

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

• Journal of Power System Engineering
• /
• v.17 no.5
• /
• pp.44-51
• /
• 2013

This paper proposes and analyzes recycling of optical phonons emitted by nonradiative decay, which is a major thermal management concern for high-power light emitting diodes (LED), by introducing an integrated, heterogeneous barrier cooling layer. The cooling is proportional to the number of phonons absorbed per electron overcoming the potential barrier, while the multi-phonon absorption rate is inversely proportional to this number. We address the theoretical treatment of photon-electron-phonon interaction/transport kinetics for optimal number of phonons (i.e., barrier height). We consider a GaN/InGaN LED with a metal/AlGaAs/GaAs/metal potential barrier and discuss the energy conversion rates. We find that significant amount of heat can be recycled by the barrier transition cooling layer.

• Proceeding of EDISON Challenge
• /
• 2013.04a
• /
• pp.238-239
• /
• 2013

We studied the thermal and electron properties of covalent one-dimensional (1D) monatomic linear chains of carbon, particularly carbyne. We found the ${\alpha}$-carbyne (Polyyne, alternating single and triple C-C bond co-existing) is more stable than ${\beta}$-carbyne (Equally-spaced based on C-C double bond) energetically. As investigation of electron density of states (EDOS), polyyne and cumulene had different electronic characteristic, which corresponding metallic and semiconducting respectively. We also calculate the phonon dispersion, phonon density of states (PDOS) and phonon transmission of carbynes.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.2182-2187
• /
• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.

• Journal of IKEEE
• /
• v.23 no.2
• /
• pp.502-507
• /
• 2019

We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2202-2207
• /
• 2007

The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.2
• /
• pp.367-373
• /
• 2007

The present study investigates numerically nonequilibrium energy transfer between electrons and phonons in metal thin films irradiated by ultrashort pulse lasers and it also provides the temporal and spatial variations of electron and phonon temperatures using the well-established two-temperature model(TTM) on the basis of the Boltzmann transport equation(BTE). This article predicts the crater shapes in gold film structures, and compares the results by using two-dimensional energy transport equation. From the results, it is found that nonequilibrium energy transfer between electrons and phonons takes place, and the equilibrium time increases with the increase of laser fluence. On the other hand, above threshold fluence the ablation time doesn't change nearly with increasing fluences. Compared with one-dimensional TTM, it also reveals that the temporal distributions of electron and phonon temperatures at the top surface estimated by using two-dimensional TTM have a similar tendency. The results show that two-dimensional TTM can simulate the crater shape of metals during the irradiation of femtosecond pulse lasers and the absorbed energy is propagated to z-direction faster than to r-direction.